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| Transys Electronics LIMITED TO-92S Plastic-Encapsulated Transistors 2SA1309A FEATURES Power dissipation 1. EMITTER TRANSISTOR (PNP) TO-92S PCM : 0.3 W (Tamb=25) 2. COLLECTOR 3. BASE Collector current : -0.1 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10A, IE=0 Ic=-2mA, IB=0 IE=-10A, IC=0 VCB=-10V, IE=0 VEB=-10V, IC=0 VCE=-10V, IC=-2mA IC=-50mA, IB=-5mA VCE=-10V, IC=-1mA, f=200MHz VCB=-10V, IE=0, f=1MHz -60 -50 -7 -0.1 -1 160 460 -0.3 80 3.5 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 160-260 R 210-340 S 290-460 Typical Characteristics 2SA1309A |
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