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| 9&( ,& 9 $ ,*%7'LH 60; 0 'LH VL]H [ PP Doc. No. 5SYA1620-01 July 03 * * * * /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD )URQWVLGH SDVVLYDWLRQ SRO\LPLGH 0D[LPXP UDWHG YDOXHV 3DUDPHWHU Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 6\PERO &RQGLWLRQV VCES IC ICM VGES tpsc Tvj VCC = 1300 V, VCEM 1700 V VGE 15 V, Tvj 125 C -40 Limited by Tvjmax -20 VGE = 0 V, Tvj 25 C PLQ PD[ 1700 100 200 20 10 150 8QLW V A A V s C 1) Maximum rated values indicate limits beyond which damage to the device may occur $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH 60; 0 ,*%7 FKDUDFWHULVWLF YDOXHV 3DUDPHWHU Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 6\PERO &RQGLWLRQV V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 900 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 160 nH, inductive load VCC = 900 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 160 nH, inductive load VCC = 900 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 160 nH, inductive load, FWD: 5SLX12H1700 VCC = 900 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 160 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VGE = 0 V, IC = 1 mA, Tvj = 25 C IC = 100 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C -500 4.5 880 9.5 0.64 0.40 4 160 170 100 110 400 480 90 110 22 mJ 32 17 mJ 27 470 A ns ns ns ns nF 800 500 6.5 PLQ 1700 2.1 2.3 2.6 100 2.7 W\S PD[ 8QLW V V V A A nA V nC VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 4 mA, VCE = VGE, Tvj = 25 C IC = 100 A, VCE = 900 V, VGE = -15 ..15 V Turn-on switching energy Eon Turn-off switching energy Eoff Short circuit current ISC tpsc V 9GE = 15 V, Tvj = 125 C, VCC = 1300 V, VCEM 9 $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA1620-01 July 03 page 2 of 5 60; 0 0HFKDQLFDO SURSHUWLHV 3DUDPHWHU Overall die L W x 8QLW 13.6 13.6 x mm mm mm m m m Dimensions exposed L x W (except gate pad) front metal gate pad thickness front back LxW 11.6 x 11.6 1.2 x 1.2 210 15 Metallization 1) AISi1 AI / Ti / Ni / Ag 4 1.2 1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQH GUDZLQJ G Emitter 1RWH DOO GLPHQVLRQV DUH VKRZQ LQ PP 7KLV LV DQ HOHFWURVWDWLF VHQVLWLYH GHYLFH SOHDVH REVHUYH WKH LQWHUQDWLRQDO VWDQGDUG ,(& &KDS ,; $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA1620-01 July 03 page 3 of 5 60; 0 200 25 C 175 150 125 IC [A] IC [A] 100 75 50 25 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5 125 C 200 VCE = 25 V 175 150 125 100 75 125 C 50 25 C 25 0 0 1 2 3 4 5 6 7 8 9 10 11 12 VGE [V] )LJ Typical onstate characteristics )LJ Typical transfer characteristics 0.300 VCC = 900 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 160 nH 0.100 0.090 0.080 0.070 Eon, Eoff [J] 0.060 Eon 0.050 0.040 0.030 Eon Eoff 0.020 Eoff 0.010 0.000 0 50 100 150 Ic [A] 200 250 300 0 10 20 30 40 50 60 70 RG [ohm] VCC = 900 V IC = 100 A VGE = 15 V Tvj = 125 C L = 160 nH 0.250 0.200 Eon, Eoff [J] 0.150 0.100 0.050 0.000 )LJ Typical switching characteristics vs collector current )LJ Typical switching characteristics vs gate resistor $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH Doc. No. 5SYA1620-01 July 03 page 4 of 5 60; 0 20 100 VCC = 900 V 15 Cies 10 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 1300 VGE [V] 10 C [nF] Coes 1 5 Cres IC = 100 A Tvj = 25 C 0 0.0 0.1 0.2 0.3 0.4 0.5 Qg [C] 0.6 0.7 0.8 0.1 0 5 10 15 20 VCE [V] 25 30 35 )LJ Typical gate charge characteristics )LJ Typical capacitances vs collector-emitter voltage This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH $%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1620-01 July 03 |
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