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| AP9915H/J Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Low drive current Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50m 20A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=125 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 12 20 16 41 26 0.2 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit /W /W Data and specifications subject to change without notice 200218032 AP9915H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50 Max. Units 50 80 1.2 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= 12V ID=10A VDS=20V VGS=5V VDS=10V ID=10A RG=3.3,VGS=5V RD=1 VGS=0V VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 20 41 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=20A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9915H/J 50 40 T C =25 o C 4.5V 40 30 T C =150 o C 4.5V ID , Drain Current (A) 30 ID , Drain Current (A) 3.5V 3.5V 20 20 2.5V 10 2.5V 10 V GS =1.5V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 V GS =1.5V 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.8 ID=6A T C =25 C 50 I D =6A 1.6 o V GS =4.5V Normalized R DS(ON) 1.4 RDS(ON) (m ) 1.2 40 1.0 0.8 30 0.6 1 2 3 4 5 6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP9915H/J 25 60 50 20 ID , Drain Current (A) 40 15 PD (W) 10 5 0 25 50 75 100 125 150 30 20 10 0 0 50 100 150 T c , Case Temperature ( C) o T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 Duty Factor = 0.5 100 Normalized Thermal Response (R thjc) 10us ID (A) 100us 1ms 10ms 100ms 1 0.2 10 0.1 0.1 0.05 0.02 Single Pulse 0.01 PDM t T T c =25 o C Single Pulse 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + TC 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP9915H/J 16 f=1.0MHz 1000 I D =20A 14 VGS , Gate to Source Voltage (V) 12 V DS =12V V DS =16V V DS =20V C (pF) Ciss Coss 100 10 8 6 Crss 4 2 0 0 2 4 6 8 10 12 14 16 18 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.2 10 0.95 T j =150 C o VGS(th) (V) T j =25 o C IS (A) 1 0.7 0.1 0.45 0.01 0 0.4 0.8 1.2 1.6 0.2 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP9915H/J RD VDS 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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