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CHA3667AQDG
RoHs COMPLIANT
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package Description
The CHA3667AQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PowerHEMT process, 0.15m gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific filter circuits. It is available in lead-free SMD package.
S Parameters versus frequency Gain & Input / Output return loss (dB)
UMS A3667A YYWWG
Vd
RFin
RFout
Main Features
Broadband performance 7-20GHz Self-biased 23dB gain @2.7dB noise figure 20dBm Output power@1dB compression DC power consumption, 175 mA @4.2V 24L-QFN4X4 SMD package ESD protected
25 20 15 10 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26
S11 S22 S21
Freq ( GHz)
Main Characteristics
Tamb. = 25 Vd = 4.2V C, Symbol Fop G NF P-1dB Id Parameter Input frequency range Small signal gain Noise Figure Output power at 1dB gain compression Bias current Min 7 23 2.7 20 175 Typ Max 20 Unit GHz dB dB dBm mA
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions
Ref: DSCHA3667AQDG7296 - 23 Oct 07 1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3667AQDG
Electrical Characteristics
Tamb. = 25 Vd = 4.2V C,
7-20GHz Amplifier
Symbol Fop G
Parameter Operating frequency range Gain (7-8GHz) (8-19GHz) (19-20GHz)
Min 7
Typ
Max 20
Unit GHz dB
20 23 20 2.7 -10(1) -10 28 dB dB dB dBm
NF RLin RLout IP3
Noise figure (7-18 GHz) Input Return Loss Output Return Loss Output IP3 Pout at 1dB gain compression:
P-1dB
( 7-13 GHz) (13-20 GHz)
20 21 40 4.2 175
dBm dBm dB V mA
Isol Vd Id
Reverse isolation Drain bias voltage Drain bias current
(1) Rlin<-6dB from 19.5GHz to 20 GHz
Ref.:DSCHA3667AQDG7296 - 23 Oct 07
2/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
7-20GHz Amplifier
Absolute Maximum Ratings (1)
Tamb = +25 C Symbol Vd Id Pin Top
Tj
CHA3667AQDG
Parameter Drain bias voltage Power supply quiescent current RF input power (2) Operating temperature range Junction temperature (3) Storage temperature range
Values 4.5V 240 3 -40 to +85
175
Unit V mA dBm C
C
Tstg
-55 to +125
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration<1s (3) Thermal Resistance channel to ground paddle =101.1 C/W for Tamb. = +85 Vd=4.2V & C id=175mA
Ref: DSCHA3667AQDG7296 - 23 Oct 07
3/14
/Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3667AQDG
Typical Measured Performance:
Tamb = +25 Vd= +4.2V Id = 175mA C,
7-20GHz Amplifier
S parameters versus Frequency
Measurements in the the plan of the connectors , using the proposed land pattern & board 96270_B .
28
Gain & Input/Output Return Loss (dB)
24 20 16 12 8 4 0 -4 -8 -12 -16 -20 2 4 6 8
S21 S21
S11
S22
10
12
14
16
18
20
22
24
Frequency (GHz)
Noise Figure versus Frequency
Result in the package access planes
10 9 8 7 NF( dB) 6 5 4 3 2 1 0 5 7 9 11 13 15 17 19 21
Frequency ( GHz)
Ref.:DSCHA3667AQDG7296 - 23 Oct 07 4/14 Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
7-20GHz Amplifier
CHA3667AQDG
Ouput Power & associated Consumption Id @ 1dB compression
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz) 300 280 260 240 220 200 180 160 140 120 100 Consumption for P-1dB ( mA)
P-1dB (dBm)
Output IP3 versus Single Output Power
40 38 36 34 Output IP3 ( dBm) 32 30 28 26 24 22 20 18 16 2 4 6 8 10 12 14 16 18 Single output power (dBm)
Ref: DSCHA3667AQDG7296 - 23 Oct 07 5/14 /Specifications subject to change without notice
Vd=4.2V
IP3 (7GHz & +25C) IP3 (8GHz & +25C) IP3 (10GHz & +25C) IP3 (14GHz & +25C) IP3 (18GHz & +25C) IP3 (20GHz & +25C)
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3667AQDG
7-20GHz Amplifier
Typical Measured Performance in temperature: ( -40C to 85 C)
Measurements in the the plan of the connectors , using the proposed land pattern & board 96270_B . Linear Gain versus Frequency and Temperature
29 27 25 23
Gain (dB)
-40 C +25 C
21 19 17 15 13 11 9 7 5 5 7 9 11 13
+85 C
15
17
19
21
Frequency (GHz)
Reverse isolation versus Frequency and Temperature
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 5 7
Reverse Isolation(dB)
-40 C
+85 C +25 C
9
11
13 Frequency (GHz)
15
17
19
21
Ref.:DSCHA3667AQDG7296 - 23 Oct 07
6/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
7-20GHz Amplifier
CHA3667AQDG
Noise Figure versus Frequency and Temperature
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 5 7 9
NF( dB)
85 C
25 C -40 C
11
13
15
17
19
21
Frequency ( GHz)
185
Consumption (Id) versus Temperature
180
Consumption Id (mA)
175
170
165
160 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80
Temperature ( C)
Ref: DSCHA3667AQDG7296 - 23 Oct 07
7/14
/Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3667AQDG
Gain and Pout versus Frequency and Temperature @ 7 GHz
7-20GHz Amplifier
-40C +85C
+25C
Gain and Pout versus Frequency and Temperature @ 16 GHz
-40C +25C +85C
C
Gain and Pout versus Frequency and Temperature @ 20 GHz
Pout @1dBc versus Frequency and Temperature
-40C +25C
Pout @ 1dBc (dBm) 24 22 20 18 16 14 12 10 7 9 11 13 15 17 19 Freq ( GHz)
-40C
+25C
+85C
+85C
C
Ref.:DSCHA3667AQDG7296 - 23 Oct 07
8/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
7-20GHz Amplifier
Vd= +4.2V
CHA3667AQDG
Output IP3 versus Single Output Power and Temperature @ 7 GHz
40 38 36 34 32 30 28 26 24 22 20 18 16 2 4
Output IP3 (dBm)
IP3 (7GHz & +25 C) IP3 (7GHz & +85 C) IP3 (7GHz & -40 C)
6
8
10
12
14
16
18
Single Output Power (dBm)
Output IP3 versus Single Output Power and Temperature @ 10 GHz
40 38 36 34 32 30 28 26 24 22 20 18 16 2 4
Output IP3 (dBm)
IP3 (10GHz & +25 C) IP3 (10GHz & +85 C) IP3 (10GHz & -40 C)
6
8
10
12
14
16
18
Single Output Power (dBm)
Output IP3 versus Single Output Power and Temperature @ 20 GHz
40 38 36 34 32 30 28 26 24 22 20 18 16 2 4
Output IP3 (dBm)
IP3 (20GHz & +25 C) IP3 (20GHz &+ 85 C) IP3 (20GHz & -40 C)
6
8
10
12
14
16
18
Single Output Power (dBm)
Ref: DSCHA3667AQDG7296 - 23 Oct 07
9/14
/Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3667AQDG
Typical Package Sij parameters
Tamb = +25C, Vd= 4.2V, Typical Id=175mA
7-20GHz Amplifier
Refer to the "definition of the Sij reference planes" section below
Definition of the Sij reference planes
The reference planes are defined from the footprint of the recommended characterization board shown below under the number 96402. The reference is the symmetrical axis of the package. The input and output reference planes are located at 3.18mm offset (input wise and output wise respectively) from this axis. Then, the given Sij incorporates this land pattern.
Ref.:DSCHA3667AQDG7296 - 23 Oct 07
10/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
7-20GHz Amplifier
Recommended footprint for 24L QFN4X4
CHA3667AQDG
Unit :mm
Via hole o0.3 0.7 0.23
Taper 0.7 0.2 0.37 0.42
Q PIN FN
SMD mounting procedure
The SMD Leadess package has been designed for high volume surface mount PCB assembly process. The dimensions and footprint required for the PCB ( motherboard) are given in the drawing above. For the mounting process standard techniques, involving solder paste and a suitable reflow process can be used. For further details, see application note AN0017.
Ref: DSCHA3667AQDG7296 - 23 Oct 07
11/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
0.45
CHA3667AQDG
7-20GHz Amplifier
Proposed Assembly board "96270" for the 24L-QFN4x4 products characterization.
Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a microstrip to coplanar transition to access the package. Recommended for the implementation of this product on a module board.
Gn Vd d Gnd
Vd
Capacitor 10nF 10%
Ref.:DSCHA3667AQDG7296 - 23 Oct 07
Gnd
Gn d
Condensator 10nF 10%
12/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
7-20GHz Amplifier
Package outline:
CHA3667AQDG
Ref: DSCHA3667AQDG7296 - 23 Oct 07
13/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHA3667AQDG
Note
7-20GHz Amplifier
Due to ESD protection circuits, RFin and RFout are DC grounded and an external capacitance might be requested to isolate the product from external voltage that could be present on the RF accesses. Vd
RFin
RFout
Ordering Information
QFN 4x4 RoHS compliant package: Stick: XY=20 Tape & reel: XY=21 CHA3667AQDG/XY
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S
Ref.:DSCHA3667AQDG7296 - 23 Oct 07
14/14
Specifications subject to change without notice
Route Departementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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