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| CHX2193 RoHS COMPLIANT 7.5-15GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2193 is a frequency multiplier by 2 monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC ground. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features Broadband performance : 6.25-8.25 GHz 12dBm output power for +12dBm input power DC power consumption, 60mA @ 3.5V (with RF) Chip size : 1.62 x 0.89 x 0.10 mm Main Characteristics Tamb. = 25C Symbol Fin Fout Pin Pout Parameter Input frequency range Output frequency range Input power Output power for +12dBm input power Min 6.25 12.5 Typ Max 8.25 16.5 Unit GHz GHz dBm 12 10 12 16 dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHX21936159 - 08 Jun 06 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHX2193 Electrical Characteristics 7.5-15GHz Frequency Multiplier Tamb = +25C, Vg1 = -0.9V Vg2 adjusted for Id = 60mA under RF Pin=+12dBm Symbol Fin Fout Pin Pout Is/Fo VSWRin VSWRout Vd Id Parameter Input frequency range Output frequency range Input power Output power for +12 dBm input power Fin level at the output ( 6.25 < Fin < 8.25GHz ), for +12dBm input power Input VSWR Output VSWR Drain bias voltage Bias current (with RF) Min 6.25 12.5 Typ Max 8.25 16.5 Unit GHz GHz dBm 12 10 -8 12 -16 2.5:1 2.5:1 3.5 60 16 -30 dBm dBm V mA A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching. Absolute Maximum Ratings Tamb = +25C Symbol Vd Id Ta Tstg Drain bias voltage Drain bias current Operating temperature range (1) Storage temperature range Parameter Values 4.0 150 -40 to +85 -55 to +125 Unit V mA C C Operation of device above anyone of these parameters may cause permanent damage. (1) Reference : backside of the chip Ref. : DSCHX21936159 - 08 Jun 06 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7.5-15GHz Frequency Multiplier Typical on Wafer Measurements CHX2193 Bias conditions: Tamb = +25C, Vd = 3.5V Vg1 = -0.9V Vg2 adjusted for Id = 60mA under RF Pin=+12dBm 18 14 10 Output power (dBm) 6 2 -2 -6 -10 -14 -18 -22 -26 6 6,5 7 7,5 Frequency (GHz) 8 8,5 Pout@Fin Pout@2Fin Bias conditions: Tamb = +25C, Vd = 3.5V Vg1 = -0.9V Vg2 adjusted for Id = 60mA under RF Fin=6.5GHz - 7.5GHz - 8.5GHz 18 17 Harmonic 2 output power (dBm) 16 15 14 13 12 11 10 9 8 7 6 7 8 9 10 11 Input power (dBm) 3/6 Pout@13GHz Pout@15GHz Pout@17GHz 12 13 14 Ref. : DSCHX21936159 - 08 Jun 06 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHX2193 Typical In-Jig Measurements 7.5-15GHz Frequency Multiplier Bias conditions: Tamb = +25C, Vd = 3.5V Vg2 adjusted for Id = 60mA under RF Pin=+10dBm Harmonics output power versus gate voltage Vg1 18 14 10 Pout@Fin Pout@3Fin Pout@5Fin Pout@2Fin Pout@4Fin Output power (dBm) 6 2 -2 -6 -10 -14 -18 -22 -26 -30 5 6 X2 gate voltage Vg1 = -0.8V 7 8 Frequency (GHz) 9 10 18 14 10 Pout@Fin Pout@3Fin Pout@5Fin Pout@2Fin Pout@4Fin Output power (dBm) 6 2 -2 -6 -10 -14 -18 -22 -26 -30 5 6 X2 gate voltage Vg1 = -0.9V 7 8 Frequency (GHz) 9 10 18 14 10 Pout@Fin Pout@3Fin Pout@5Fin Pout@2Fin Pout@4Fin Output power (dBm) 6 2 -2 -6 -10 -14 -18 -22 -26 -30 5 6 X2 gate voltage Vg1 = -1.0V 7 8 Frequency (GHz) 9 10 Ref. : DSCHX21936159 - 08 Jun 06 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7.5-15GHz Frequency Multiplier Chip Assembly and Mechanical Data VG1 Voltage VG2 Voltage VD Voltage CHX2193 10nF 10nF 10nF 100pF 100pF 100pF Input / Output Bonding wires as short as possible Input / Output Bonding wires as short as possible Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHX21936159 - 08 Jun 06 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHX2193 7.5-15GHz Frequency Multiplier Ordering Information Chip form : CHX2193-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHX21936159 - 08 Jun 06 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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