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| Ordering number : ENN8068 CPH6614 N-Channel and P-Channel Silicon MOSFETs CPH6614 Features * General-Purpose Switching Device Applications * * * The CPH6614 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, Ultrahigh-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 20 1.8 7.2 0.8 150 --55 to +150 P-channel -30 20 --1.2 --4.8 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 30 1 10 1.2 0.78 1.3 150 290 95 22 16 195 410 2.6 V A A V S m m pF pF pF Symbol Conditions Ratings min typ max Unit Marking : WA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004PE TS TB-00000656 No.8068-1/6 CPH6614 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=-1mA VDS=--10V, ID=-0.6A ID=--0.6A, VGS=-10V ID=--0.3A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--1.2A VDS=--10V, VGS=-10V, ID=--1.2A VDS=--10V, VGS=-10V, ID=--1.2A IS=--1.2A, VGS=0 --1.2 0.6 1.0 320 590 104 22 17 12.5 24 12 12.2 3.3 0.48 0.45 --0.91 --1.5 420 830 --30 --1 10 --2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A IS=1.8A, VGS=0 Ratings min typ 6.2 4.5 13 6.4 3.2 0.74 0.42 0.93 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2238 0.2 2.9 6 5 4 0.15 Electrical Connection 6 5 4 0.05 1 0.6 1 2 3 0.95 2 3 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 Top view 0.6 1.6 2.8 0.4 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 SANYO : CPH6 0.7 0.9 0.2 No.8068-2/6 CPH6614 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN ID=1A RL=15 VDD=15V 0V --10V VIN ID= --0.6A RL=25 [P-channel] VIN VDD= --15V D PW=10s D.C.1% VOUT D PW=10s D.C.1% VOUT G G P.G 50 S P.G 50 S 1.8 ID -- VDS V V [Nch] --1.2 ID -- VDS .0V .0V --1 0 [Pch] 6.0 4.0 1.6 1.4 10.0 --6 --1.0 Drain Current, ID -- A Drain Current, ID -- A V 3.5 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 --0.8 --3.0V --0.6 3.0V --0.4 --4 .0V V VGS= --2.5V VGS=2.5V --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 2.0 IT07277 Drain-to-Source Voltage, VDS -- V --2.0 IT07278 ID -- VGS Ta= --25 C 75 C VDS=10V [Nch] C ID -- VGS VDS= --10V [Pch] Ta= --25 C 75 C 25 --1.5 --2.0 25 1.8 1.6 --1.8 --1.6 Drain Current, ID -- A Drain Current, ID -- A 1.4 1.2 1.0 0.8 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 5C 0.6 0.4 0.2 0 0 0.5 1.0 1.5 C --25 C 75 2.0 2.5 3.0 3.5 4.0 4.5 0 --0.5 --1.0 75 C --25 C Ta= 2 Ta = C --2.5 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V IT07279 Gate-to-Source Voltage, VGS -- V IT07280 No.8068-3/6 25 C --4.5 CPH6614 700 RDS(on) -- VGS [Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 1200 RDS(on) -- VGS [Pch] Ta=25C 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- m 600 500 800 400 1.0A 300 600 --600mA ID=0.5A 400 ID= --300mA 200 100 0 0 2 4 6 8 10 12 14 16 18 20 200 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Gate-to-Source Voltage, VGS -- V 500 IT07281 RDS(on) -- Ta Gate-to-Source Voltage, VGS -- V 1200 IT07282 [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 450 400 350 300 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 1000 , VG 0.5A I D= 4V S= 800 600 I D= -- = --4V VGS mA, 300 .0A I D=1 =10V , VGS 400 = --10V mA, V GS I D= --600 200 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 5 yfs -- ID IT07283 Ambient Temperature, Ta -- C 5 [Nch] Forward Transfer Admittance, yfs -- S VDS=10V yfs -- ID IT07284 [Pch] VDS= --10V Forward Transfer Admittance, yfs -- S 3 2 3 2 1.0 7 5 3 2 C 25 -2 =C 5 1.0 7 5 3 2 Ta 7 5C = Ta --2 C 25 5C C 75 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 3 2 IT07285 IF -- VSD Drain Current, ID -- A 3 2 --1.0 IT07286 [Nch] VGS=0 IF -- VSD [Pch] VGS=0 Forward Current, IF -- A Forward Current, IF -- A 1.0 7 5 7 5 3 2 --0.1 7 5 3 2 5C 0.1 7 5 3 2 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 --0.01 --0.4 --0.5 --0.6 Ta= 7 25 2 --25 C 3 5C 25 C --25 C --0.7 --0.8 --0.9 Ta= 7 C --1.0 --1.1 --1.2 Diode Forward Voltage, VSD -- V IT07287 Diode Forward Voltage, VSD -- V IT07288 No.8068-4/6 CPH6614 3 2 SW Time -- ID [Nch] VDD=15V VGS=10V Switching Time, SW Time -- ns 3 2 SW Time -- ID [Pch] VDD= --15V VGS= --10V Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 100 7 5 3 2 td(off) td(on) tf tf td(on) 10 7 5 3 td(off) tr tr 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 2 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT07289 [Nch] f=1MHz 3 2 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT07290 [Pch] f=1MHz Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 100 7 5 Ciss 100 7 5 Ciss 3 2 3 2 Coss Crss Coss Crss 10 0 5 10 15 20 25 30 IT07291 10 0 --5 --10 --15 --20 --25 --30 IT07292 Drain-to-Source Voltage, VDS -- V 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V --10 --9 [Nch] VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07293 Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.8A VDS= --10V ID= --1.2A --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07294 Total Gate Charge, Qg -- nC 10 7 5 3 2 Total Gate Charge, Qg -- nC 7 5 3 2 ASO IDP=7.2A [Nch] <10s 1m 100 s s Drain Current, ID -- A ASO IDP= --4.8A [Pch] <10s ID=1.8A D Drain Current, ID -- A ID= --1.2A DC 10 0 1m s s 10 m s 10 m 1.0 7 5 3 2 0.1 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 s 10 0m s io n a= (T at er 10 Operation in this area is limited by RDS(on). 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 0.1 23 5 7 1.0 23 5 7 10 2 3 5 Drain-to-Source Voltage, VDS -- V C op 0m s n a= (T e op ra tio ) C 25 IT07295 25 Operation in this area is limited by RDS(on). --0.01 --0.01 2 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 3 5 7--0.1 23 5 7--1.0 23 5 7 --10 2 3 5 ) C IT07296 Drain-to-Source Voltage, VDS -- V No.8068-5/6 CPH6614 1.0 PD -- Ta [Nch / Pch] Allowable Power Dissipation, PD -- W 0.8 M ou nte do 0.6 na ce ram ic bo 0.4 ard (90 0m 0.2 m2 !0 .8 mm )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT07297 Note on usage : Since the CPH6614 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8068-6/6 |
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