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| Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features *6 pad surface mount package *VDS = 90V *RDS(on) <5 *ID(on) N-Channel = 1.5A *Two devices selected for VDS, ID(on) *Full TX Processing Available *Gold plated contacts Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on), RDS(on) and Gfs. Order HCT802TX for processing per MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. TX products receive a VGS HTRB at 16 V for 48 hrs. at 150o C and a VDS HTRB at 72 V for 160 hrs. at 150o C. and RDS(on) similarity P-Channel = 1.1A Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V Drain Current (Limited by Tj max) N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A P-Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C Power Dissipation TA = 25o C (Both devices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Total TS = 25o C (Both devices equally driven). . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W Total(1) (Ts = Substrate that the package is soldered to) Notes (1) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measureable as an outgoing test. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-34 (972) 323-2200 Fax (972) 323-2396 Types HCT802, HCT802TX, HCT802TXV Electrical Characteristics (TA = 25o C unless specified otherwise) Symbol BVDSS VTH Parameters Drain-Source Breakdown Gate Threshold Voltage Device B=Both B N P IGSS IDSS Gate-Body Leakage Zero Gate Voltage Drain Current B B B ID(on) On-State Drain Current N P RDS(on) Drain-Source on Resistance Gfs Forward Transconductance B N P CISS Input Capacitance N P COSS Common Source Output Capacitance Reverse Transfer Capacitance N P N P t(on) Turn-on-time N P t(off) Turn-off-time N P * Reverse polarity for P-Channel device 170 200 70 150 40 60 10 25 15 50 17 50 1.5 -1.1 5 Min 90* 0.75 -2.0 2.5 -4.5 100 10* 500* Max Units V V V nA A A A A Test Conditions ID = 10 A*, VGS = 0 VGS = VDS, ID = 1 mA ID = -1 mA VGS = 20 V, VDS = 0 VDS = 90 V*, VGS = 0 V Tj = 150o C VDS = 25 V, VGS = 10 V VDS = -15 V, VGS = -10 V VGS = 10 V*, ID = 1 A* mmho VDS = 25 V, ID = 0.5 A mmho VDS = -10 V, ID = -0.5 A pf pf pf pf pf pf ns ns ns ns VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = -25 V, VGS = 0 V, f = 1 MHz VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = -25 V, VGS = 0 V, f = 1 MHz VDS = 25 V, VGS = 0 A, f = 1 MHz VDS = -25 V, VGS = 0 A, f = 1 MHz VDD = 25 V, ID = 1 A, RL = 50 VDD = -25 V, ID = -0.5 A, RL = 50 VDD = 25 V, ID = 1 A, RL = 50 VDD = -25 V, ID = -0.5 A, RL = 50 CRSS Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 15-35 |
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