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| NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation TC = 25 C TC = 100 C Operating Junction & Storage Temperature Range Lead Temperature ( /16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 SYMBOL VDS VGS LIMITS 40 20 10 8 40 32 22 -55 to 150 275 UNITS V V TC = 25 C TC = 100 C ID IDM PD Tj, Tstg TL A W C SYMBOL RJc RJA TYPICAL MAXIMUM 3 75 UNITS C / W C / W Pulse width limited by maximum junction temperature. Duty cycle 1 ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TC = 125 C VDS = 10V, VGS = 10V 40 40 1 1.5 2.5 250 1 10 nA A A V LIMITS UNIT MIN TYP MAX 1 AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 8A VGS = 10V, ID = 10A VDS = 10V, ID = 10A DYNAMIC 30 21 19 42 28 m S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 Ciss Coss Crss Qg Qgs Qgd 2 790 VGS = 0V, VDS = 10V, f = 1MHz 175 65 16 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 10A 2.5 2.1 2.2 VDS = 20V, RL = 1 ID 1A, VGS = 10V, RGEN = 6 7.5 11.8 3.7 4.4 15 21.3 7.4 nS nC pF Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time2 td(on) tr td(off) tf Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current Pulsed Current3 Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge 1 2 IS ISM VSD trr Qrr IS = IS, VGS = 0V IF = 5 A, dlF/dt = 100A / S 15.5 7.9 1.3 2.6 1 A V nS nC Pulse test : Pulse Width 300 sec, Duty Cycle 2 . Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P2804BDG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125 C 1 25 C 0.1 -55 C 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 3 AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free 4 AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free TO-252 (DPAK) MECHANICAL DATA mm Dimension Min. A B C D E F G 9.35 2.2 0.45 0.89 0.45 0.03 5.2 Typ. Max. 10.4 2.4 0.6 1.5 0.69 0.23 6.2 H I J K L M N Dimension Min. 0.89 6.35 5.2 0.6 0.5 3.96 4.57 Typ. Max. 2.03 6.80 5.5 1 0.9 5.18 mm A B F C H G L 3 1 K M 2 J I D E 5 AUG-19-2004 |
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