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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15 1.0+/-0.05
2
FEATURES
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz)
3
(0.25)
INDEX MARK (Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm
APPLICATION
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter "G" after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1B
MITSUBISHI ELECTRIC 1/8
30 Jul 2007
3.5+/-0.05
2.0+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 Junction to case RATINGS UNIT 30 V +/-20 V 21.9 W 0.1 W 1.5 A C 150 -40 to +125 C C/W 5.7
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS Vth Pout1 D1 Pout2 D2 PARAMETER Drain cutoff current Gate cutoff current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=50mW, f=175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(Pin Control) f=175MHz,Idq=200mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9.2V,Po=2W(Pin Control) f=520MHz,Idq=200mA,Zg=50 Load VSWR=20:1(All Phase) MIN 1 2 55 2 50 LIMITS TYP MAX. 100 1 1.8 3 3 65 3 65 No destroy UNIT uA uA V W % W % -
Load VSWR tolerance
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD02MUS1B
MITSUBISHI ELECTRIC 2/8
30 Jul 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
Vgs-Ids CHARACTERISTICS 3.0 2.5 Ids(A),GM(S) 2.0 1.5 1.0 0.5
GM Ta=+25C Vds=7.2V
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
25 CHANNEL DISSIPATION Pch(W) 20 15
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
*1:The material of the PCB Glass epoxy (t=0.6 mm)
Ids
On PCB(*1) with Heat-sink
10 5
On PCB(*1)
0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
0.0 0 1 2 3 Vgs(V) 4 5
Vds-Ids CHARACTERISTICS 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 Vds(V) 8 10
Ta=+25C Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V
Vds VS. Ciss CHARACTERISTICS 40
Ta=+25C f=1MHz
30 Ciss(pF) 20 10
Ids(A)
Vgs=5V
Vgs=4V Vgs=3V
0 0 5 10 Vds(V) 15 20
Vds VS. Coss CHARACTERISTICS 40
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 6 5 Crss(pF) 4 3 2 1
Ta=+25C f=1MHz
30 Coss(pF)
20
10 0 0 5 10 Vds(V) 15 20 0 5 10 Vds(V) 15 20
0
RD02MUS1B
MITSUBISHI ELECTRIC 3/8
30 Jul 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
Pin-Po CHARACTERISTICS @f=175MHz
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Po
40 35 Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 5 0 -10
100 90 Pout(W) , Idd(A) 80 d(%)
4.0
100
3.0
Po d
80 d(%) Idd(A)
30 Jul 2007
Gp
70 60 50
2.0
Ta=+25C f=175MHz Vdd=7.2V Idq=200mA
40 30 20
1.0
Ta=25C f=175MHz Vdd=7.2V Idq=200mA Idd
60
40
0.0 0 20 40 60 Pin(mW) 80
-5
0
5 10 Pin(dBm)
15
20
20 100
40 35 Po(dBm) , Gp(dB) , Idd(A) 30 25 20 15 10 5 0 -10
Pin-Po CHARACTERISTICS @f=520MHz
Po
100 90 Pout(W) , Idd(A) 80
4.0
Pin-Po CHARACTERISTICS @f=520MHz
Po
100
3.0
d
80 d(%)
Gp
d(%)
70 60 50
2.0
Ta=+25C f=520MHz Vdd=7.2V Idq=200mA
40 30 20
1.0
Idd
Ta=25C f=520MHz Vdd=7.2V Idq=200mA
60
40
0.0 0 20 40 60 Pin(mW) 80
-5
0
5 10 Pin(dBm)
15
20
20 100
7 6 5 Po(W) 4 3 2 1 0 3
Vdd-Po CHARACTERISTICS @f=175MHz
Ta=25C f=175MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po
1.4 1.2 1.0 Idd(A) Po(W)
7 6 5 4 3 2 1 0 3
Vdd-Po CHARACTERISTICS @f=520MHz
Ta=25C f=520MHz Pin=50mW Idq=200mA Zg=ZI=50 ohm Po
1.4 1.2 1.0
Idd
0.8 0.6 0.4 0.2 0.0
Idd
0.8 0.6 0.4 0.2 0.0
5
7 9 Vdd(V)
11
13
5
7 9 Vdd(V)
11
13
RD02MUS1B
MITSUBISHI ELECTRIC 4/8
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
V dd
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
V gg
C1 19m m
RD02MUS1B RD 02MV S1 175MHz
C2 15m m 10pF L3 5mm 3m m 3m m 11.5m m
10uF,50V
4.7kO HM RF-IN 3mm 33m m 6.5m m 12m m L1 39pF 68O HM 240pF
13.5m m 12m m 5m m RF-O UT L2 62pF 43pF
5m m 62pF
10pF
L1: Enam eled wire 5T urns,D:0.43m m,2.46m m O .D L2: Enam eled wire 3T urns,D:0.43m m ,2.46m m O .D L3: Enameled wire 9Turns,D :0.43m m ,2.46mm O .D C1,C2:1000pF,0.0022uF in parallel
Note:Board m aterial-Teflon substrate Micro s trip line width=2.2m m /50O HM,er:2.7,t=0.8m m
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C1 19m m 19m m R D02MUS 1 B 520MHz 3m m 11m m 62pF 6pF 43pF 240pF 68O HM L1
C2
10uF,50V
4.7kO HM 26.5m m 20mm R F -IN 2m m 10m m
4.5m m
40.5m m RF-O UT 62pF 18pF
L1: E nam eled wire 9Turns,D :0.43m m ,2.46m mO .D C 1,C 2:1000pF,0.022uF in parallel
Note:B oard m aterial-Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8mm
RD02MUS1B
MITSUBISHI ELECTRIC 5/8
30 Jul 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout* Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=11.61+j17.88 Zout*=6.83+j5.21
175MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance output impedance
175MHz Zout*
520MHz Zin* Zout* Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=1.20+j5.47 Zout*=5.56+j1.31
520MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance output impedance 520MHz Zout*
RD02MUS1B
MITSUBISHI ELECTRIC 6/8
30 Jul 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
S12 (mag) 0.042 0.042 0.042 0.042 0.041 0.039 0.038 0.036 0.034 0.032 0.031 0.030 0.030 0.029 0.027 0.025 0.024 0.022 0.021 0.019 0.018 0.016 0.015 0.013 0.012 (ang) 8.9 -0.1 -3.3 -7.6 -11.2 -17.6 -23.0 -28.2 -32.2 -36.5 -39.8 -41.1 -41.9 -43.2 -46.6 -49.5 -51.5 -54.4 -56.1 -58.7 -59.4 -60.7 -62.1 -64.4 -64.9 (mag) 0.621 0.598 0.591 0.590 0.594 0.609 0.628 0.653 0.675 0.699 0.723 0.732 0.735 0.743 0.763 0.781 0.798 0.811 0.824 0.836 0.845 0.853 0.861 0.870 0.874 S22 (ang) -118.8 -130.5 -133.7 -138.0 -141.2 -145.5 -148.8 -151.2 -153.5 -155.8 -157.7 -158.4 -158.6 -159.6 -161.5 -162.9 -164.6 -166.1 -167.7 -169.0 -170.3 -171.4 -172.5 -173.5 -174.6
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA)
Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.847 0.828 0.824 0.817 0.816 0.816 0.820 0.827 0.835 0.844 0.854 0.858 0.859 0.862 0.871 0.878 0.883 0.890 0.897 0.899 0.905 0.907 0.913 0.915 0.918 (ang) -132.5 -144.6 -148.1 -152.8 -156.2 -161.2 -164.9 -167.6 -169.9 -171.9 -173.6 -174.3 -174.7 -175.3 -176.7 -178.0 -179.4 179.4 178.3 177.0 176.0 175.1 174.3 173.2 172.6 S21 (mag) (ang) 16.923 100.2 12.806 90.7 11.555 87.5 9.864 82.8 8.579 78.6 6.712 71.2 5.436 64.9 4.501 59.3 3.813 54.0 3.257 49.3 2.823 44.9 2.668 43.1 2.613 42.6 2.458 40.9 2.161 37.1 1.911 33.5 1.701 30.4 1.522 27.3 1.368 24.4 1.238 21.7 1.123 19.3 1.025 17.1 0.937 14.9 0.859 12.9 0.794 11.0
RD02MUS1B
MITSUBISHI ELECTRIC 7/8
30 Jul 2007
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD02MUS1B
MITSUBISHI ELECTRIC 8/8
30 Jul 2007

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