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UNISONIC TECHNOLOGIES CO., LTD 8N60
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* RDS(ON) = 1.2 @VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
*Pb-free plating product number: 8N60L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating 8N60-x-TA3-T 8N60L-x-TA3-T 8N60-x-TF3-T 8N60L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
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ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER SYMBOL 8N60-A 8N60-B
Power MOSFET
RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 1) IAR 7.5 A TC = 25C 7.5 A Continuous Drain Current ID TC = 100C 4.6 A Pulsed Drain Current (Note 1) IDM 30 A Single Pulsed (Note 2) EAS 230 mJ Avalanche Energy 14.7 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 147 W Power Dissipation PD TO-220F 48 W Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case TO-220 TO-220F TO-220 TO-220F SYMBOL JA JC RATING 62.5 62.5 0.85 2.6 UNIT C/W C/W C/W C/W
ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 8N60-A 8N60-B SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 0.7 2.0 1.0 4.0 1.2 MIN TYP MAX UNIT 600 650 10 100 -100 V V A nA nA V/ V pF pF pF ns ns ns ns nC nC nC 2 of 8
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Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
BVDSS/ TJ ID = 250 A, Referenced to 25C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.75 A
VDS = 25 V, VGS = 0 V, f = 1MHz
965 1255 105 135 12 16 16.5 45 60.5 130 81 170 64.5 140 28 36 4.5 12
VDD = 300V, ID = 7.5 A, RG = 25 (Note 4, 5)
VDS= 480V,ID= 7.5A, VGS= 10 V (Note 4, 5)
UNISONIC TECHNOLOGIES CO., LTD
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8N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 7.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 7.5 A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT 1.4 7.5 30 365 3.4 V A A ns C
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TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD
ID(t)
VDS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Power MOSFET
On-Resistance Variation vs. Drain Current and Gate Voltage Drain-Source On-Resistance, RDS(ON) (ohm) 6 5 4 3 2 1 0 0 5 VGS=20V
Note: TJ=25
Body Diode Forward Voltage vs. Source Current 10 Reverse Drain Current, IDR (A)
VGS=10V
150 25 1 Notes: 1. VGS=0V 2. 250s Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V)
Gate Charge Characteristics 12 10 8 VDS=300V VDS=480V VDS=120V
10
15
20
Drain Current, ID (A)
Capacitance Characteristics (Non-Repetitive) 1900 1700 1500 1300 1100 900 700 Crss
Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Ciss
Coss
6 4 2 0 10 0
500 Notes: 300 1. V =0V GS 100 2. f = 1MHz 0 0.1 1
Note: ID=8A 5 10 15 20 25 30 Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
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TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs. Temperature 1.2 1.1
Power MOSFET
On-Resistance Junction Temperature 3.0 2.5 2.0
1.0
1.5 1.0
0.9 0.8 -100
Note: 1. VGS=0V 2. ID=250A 0 50 100 150 200 Junction Temperature, TJ ( ) -50
0.5 0.0 -100
Note: 1. VGS=10V 2. ID=4A -50 0 50 100 150 200 Junction Temperature, TJ ( )
Maximum Safe Operating Area 100
Operation in This Area is Limited by RDS(on)
Maximum Drain Current vs. Case Temperature 10 8 6 4 2 0
100s
Drain Current, ID (A)
10
DC
100s 1ms
10ms
1
Notes: 1. TJ=25 2. TJ=150 3. Single Pulse
0.1 1 10 100 1000 Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
25
50
75
100
125 )
150
Case Temperature, TC (
Transient Thermal Response Curve 1
D=0.5 D=0.2 D=0.1
0.1 D=0.05
0.02 0.01 Single pulse
Notes: /W Max. 1. JC (t) = 0.85 2. Duty Factor, D=t1/t2 3. TJM-TC=PDMx JC (t)
0.01 10-5
10-4 10-3 10-2 10-1 100
101
Square Wave Pulse Duration, t1 (sec)
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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www.unisonic.com.tw
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