 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Diode BAV99W FEATURES 1. 25 A0. 05 1. 01 R EF SWITCHING DIODE SOT-323 Power dissipation PD: 200 mW (Tamb=25) 1. 30 A0. 03 2. 30 A0. 05 Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 Unit: mm Marking: KJG ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR unless otherwise specified) Test conditions MIN 75 2.5 715 855 1000 1250 2 MAX UNIT V IR= 100A VR=75V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz IF=IR=10mA 0. 30 Forward voltage VF Diode capacitance CD Reveres recovery time trr Irr=0.1xIR RC=100 4 2. 00 A0. 05 A mV pF nS |
Price & Availability of BAV99W
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |