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MJD31CT4
Low voltage NPN power transistor
General features
Surface-mounting TO-252 power package in tape & reel In compliance with the 2002/93/EC European Directive
Applications
3 1
DPAK TO-252
General purpose switching and amplifier transistor
Description
The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Internal schematic diagram
Order codes
Part Number MJD31CT4 Marking MJD31C Package DPAK Packing Tape & reel
April 2007
Rev 2
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Electrical ratings
MJD31CT4
1
Electrical ratings
Table 1.
Symbol VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-base voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at T c = 25C Storage temperature Max. operating junction temperature Value 100 100 5 3 5 1 15 -65 to 150 150 Unit V V V A A A W C C
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MJD31CT4
Electrical characteristics
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 2.
Symbol ICES ICEO IEBO
Electrical characteristics
Parameter Collector cut-off current (VBE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions VCE =100V VCB =60V VEB =5V Min. Typ. Max. 20 Unit A A mA
50 0.1
Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) VBE(on) (1) hFE Collector-emitter saturation voltage Base-emitter on voltage DC current gain
IC =30mA IC =3A IC =3A IC =1A IC = 3A _ IB =375mA VCE=4V
100
V
1.2 1.8 25 10 50
V V
_
_ _ VCE =4V V CE =4V
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
2.1
Electrical characteristic (curves)
Figure 1. Safe operating area Figure 2. Derating curve
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Electrical characteristics Figure 3. DC current gain Figure 4. DC current gain
MJD31CT4
Figure 5.
Collector-emitter saturation voltage
Figure 6.
Base-emitter saturation voltage
Figure 7.
Collector-emitter on voltage
Figure 8.
Resistive load switching time
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MJD31CT4 Figure 9. Resistive load switching time
Electrical characteristics
2.2
Test circuits
Figure 10. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
Figure 11. Inductive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
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Package mechanical data
MJD31CT4
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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MJD31CT4
Package mechanical data
TO-252 (DPAK) MECHANICAL DATA
DIM. MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.8 1.00 8
o
inch MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.024 0
o
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
0.039 0o
P032P_B
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Revision history
MJD31CT4
4
Revision history
Table 3.
Date 01-Dec-2000 20-Apr-2007
Revision history
Revision 1 2 Initial release. The document has been reformatted. New graphics have been added. Changes
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MJD31CT4
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