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SA58670
2.1 W/channel stereo class-D audio amplifier
Rev. 01 -- 4 January 2008 Product data sheet
1. General description
The SA58670 is a stereo, filter-free class-D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The SA58670 features independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package makes it an ideal choice for both cellular handsets and PDAs. The SA58670 delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 . It delivers 2.1 W/channel at 5.0 V into 4 . The maximum power efficiency is excellent at 70 % to 74 % into 4 and 84 % to 88 % into 8 . The SA58670 provides thermal and short-circuit shutdown protection.
2. Features
I Output power: N 2.1 W/channel into 4 at 5.0 V N 1.4 W/channel into 8 at 5.0 V N 720 mW/channel into 8 at 3.6 V I Supply voltage: 2.5 V to 5.5 V I Independent shutdown control for each channel I Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB I High SVRR: -77 dB at 217 Hz I Fast start-up time: 3.5 ms I Low supply current I Low shutdown current I Short-circuit and thermal protection I Space savings with 4 mm x 4 mm HVQFN20 package I Low junction to ambient thermal resistance of 24 K/W with exposed DAP
3. Applications
I I I I I Wireless and cellular handset and PDA Portable DVD player USB speaker Notebook PC Portable radio and gaming
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
I Educational toy
4. Ordering information
Table 1. Ordering information Package Name SA58670BS HVQFN20 Description plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm Version SOT917-1 Type number
5. Block diagram
SA58670
3, 13 PVDD
VDD
right input
INRP INRN
16 17
14 OUTRP GAIN ADJUST PWM HBRIDGE 11 OUTRN
n.c.
6, 10
INTERNAL OSCILLATOR
GND
left input
INLP INLN
20 19
2 OUTLP GAIN ADJUST PWM HBRIDGE 5 OUTLN
G0 G1 SDR
15 1 8
300 k
9 AVDD
VDD
BIAS CIRCUITRY
SHORT-CIRCUIT PROTECTION 4, 12 PGND AGND
SDL
7
300 k
18
001aah482
Refer to Table 6 for gain selection.
Fig 1. Block diagram
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Product data sheet
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NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
6. Pinning information
6.1 Pinning
18 AGND 17 INRN 16 INRP 15 G0 14 OUTRP 13 PVDD 12 PGND DAP(1) n.c. 10 6 7 8 9 11 OUTRN 19 INLN SDL 20 INLP 1 2 3 4 5 n.c.
terminal 1 index area
G1 OUTLP PVDD PGND OUTLN
SA58670BS
SDR
AVDD
001aah483
Transparent top view
(1) Exposed Die Attach Paddle (DAP).
Fig 2. Pin configuration for HVQFN20
6.2 Pin description
Table 2. Symbol G1 OUTLP PVDD PGND OUTLN n.c. SDL SDR AVDD n.c. OUTRN PGND PVDD OUTRP G0 INRP INRN AGND Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Description gain select input 1 left channel positive output power supply voltage (level same as AVDD) power ground left channel negative output not connected left channel shutdown input (active LOW) right channel shutdown input (active LOW) analog supply voltage (level same as PVDD) not connected right channel negative output power ground power supply voltage (level same as AVDD) right channel positive output gain select input 0 right channel positive input right channel negative input analog ground
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Product data sheet
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SA58670
2.1 W/channel stereo class-D audio amplifier
Pin description ...continued Pin 19 20 (DAP) Description left channel negative input left channel positive input exposed die attach paddle; connect to ground plane heat spreader
Table 2. Symbol INLN INLP -
7. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).[1] Symbol VDD VI Parameter supply voltage input voltage Conditions Active mode Shutdown mode pin SDL pin SDR other pins P power dissipation derating factor 41.6 mW/K Tamb = 25 C Tamb = 75 C Tamb = 85 C Tamb Tj Tstg Vesd ambient temperature junction temperature storage temperature electrostatic discharge voltage human body model machine model operating in free air operating -40 -40 -65 2000 200 5.2 3.12 2.7 +85 +150 +85 W W W C C C V V Min -0.3 -0.3 GND GND -0.3 Max +6.0 +7.0 VDD VDD VDD + 0.3 Unit V V V V V
[1]
VDD is the supply voltage on pins PVDD and pin AVDD. GND is the voltage ground on pins PGND and pin AGND.
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Product data sheet
Rev. 01 -- 4 January 2008
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NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
8. Static characteristics
Table 4. Static characteristics Tamb = 25 C; unless otherwise specified[1]. Symbol VDD IDD Parameter supply voltage supply current Conditions operating VDD = 2.5 V; no load VDD = 3.6 V; no load VDD = 5.5 V; no load PSRR Vi(cm) CMRR IIH IIL fsw Gv(cl) power supply rejection ratio common-mode input voltage common mode rejection ratio HIGH-level input current LOW-level input current switching frequency closed-loop voltage gain inputs are shorted together; VDD = 2.5 V to 5.5 V VDD = 5.5 V; VI = VDD VDD = 5.5 V; VI = 0 V VDD = 2.5 V to 5.5 V VG0 = VG1 = 0.35 V VG0 = VDD; VG1 = 0.35 V VG0 = 0.35 V; VG1 = VDD VG0 = VG1 = VDD Pins OUTLP, OUTLN, OUTRP and OUTRN RDSon drain-source on-state resistance VDD = 2.5 V VDD = 3.6 V VDD = 5.5 V |VO(offset)| output offset voltage measured differentially; inputs AC grounded; Gv(cl) = 6 dB; VDD = 2.5 V to 5.5 V 700 570 500 5 10 m m m mV VDD = 2.5 V to 5.5 V Min 2.5 0.5 250 5.5 11.5 17.5 23.5 Typ 4 5 6 -75 -69 300 6 12 18 24 Max 5.5 6 7.5 9 -55 VDD - 0.8 -50 50 5 350 6.5 12.5 18.5 24.5 Unit V mA mA mA dB V dB A A kHz dB dB dB dB
Zo(sd) VI II
[1]
shutdown mode output impedance VSDR = VSDL = 0.35 V input voltage input current channel on channel off no input signal; channel off
GND -
2 0.5VDD 10
0.4 1000
k V V nA
Pins SDL and SDR
VDD is the supply voltage on pins PVDD and pin AVDD. GND is the ground supply voltage on pins PGND and pin AGND.
SA58670_1
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Product data sheet
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NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
9. Dynamic characteristics
Table 5. Dynamic characteristics Tamb = 25 C; RL = 8 ; unless otherwise specified[1]. Symbol Po Parameter output power Conditions per channel; f = 1 kHz; THD+N = 10 % RL = 8 ; VDD = 3.6 V RL = 8 ; VDD = 5.0 V RL = 4 ; VDD = 5.0 V THD+N total harmonic distortion-plus-noise VDD = 5.0 V; Gv(cl) = 6 dB; f = 1 kHz Po = 0.5 W Po = 1.0 W SVRR supply voltage ripple rejection Gv(cl) = 6 dB; f = 217 Hz VDD = 3.6 V VDD = 5.0 V CMRR Zi common mode rejection VDD = 5.0 V; Gv(cl) = 6 dB; f = 217 Hz ratio input impedance Gv(cl) = 6 dB Gv(cl) = 12 dB Gv(cl) = 18 dB Gv(cl) = 24 dB td(sd-startup) Vn(o) delay time from shutdown to start-up output noise voltage VDD = 3.6 V VDD = 3.6 V; f = 20 Hz to 20 kHz; inputs are AC grounded no weighting A weighting
[1] VDD is the supply voltage on pins PVDD and pin AVDD.
Min -
Typ 0.72 1.4 2.1 0.11 0.14 -73 -77 -69 28.1 17.3 9.8 5.2 3.5
Max -
Unit W W W % % dB dB dB k k k k ms
-
35 27
-
V V
SA58670_1
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Product data sheet
Rev. 01 -- 4 January 2008
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NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
10. Typical performance curves
102 THD+N (%) 10
001aah484
(1)
(2)
(3)
1
10-1
10-2 10-5
10-4
10-3
10-2
10-1
1 Po (W)
10
a. Gv(cl) = 24 dB
102 THD+N (%) 10
(1) (2) (3)
001aah485
1
10-1
10-2 10-5
10-4
10-3
10-2
10-1
1 Po (W)
10
b. Gv(cl) = 6 dB.
fi = 1 kHz. (1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V.
Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL = 8
SA58670_1
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Product data sheet
Rev. 01 -- 4 January 2008
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SA58670
2.1 W/channel stereo class-D audio amplifier
102 THD+N (%) 10
001aah486
(1)
(2)
(3)
1
10-1
10-2 10-5
10-4
10-3
10-2
10-1
1 Po (W)
10
a. Gv(cl) = 24 dB.
102 THD+N (%) 10
001aah487
(1)
(2)
(3)
1
10-1
10-2 10-5
10-4
10-3
10-2
10-1
1 Po (W)
10
b. Gv(cl) = 6 dB.
fi = 1 kHz. (1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V.
Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL = 4
SA58670_1
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Product data sheet
Rev. 01 -- 4 January 2008
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NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
1 THD+N (%) 10-1
(1) (2) (3)
001aah488
10-2
10-3 10
102
103
104 f (Hz)
105
(1) Po = 350 mW; Vi = 590 mV (RMS). (2) Po = 240 mW; Vi = 490 mV (RMS). (3) Po = 120 mW; Vi = 346 mV (RMS).
a. RL = 4
1 THD+N (%) 10-1
(1) (2)
001aah489
(3)
10-2
10-3 10
102
103
104 f (Hz)
105
(1) Po = 260 mW; Vi = 721.1 mV (RMS). (2) Po = 180 mW; Vi = 600 mV (RMS). (3) Po = 90 mW; Vi = 424.3 mV (RMS).
b. RL = 8
Gv(cl) = 6 dB.
Fig 5. Total harmonic distortion-plus-noise as a function of frequency; VDD = 2.5 V
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Product data sheet
Rev. 01 -- 4 January 2008
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NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
1 THD+N (%) 10-1
(3) (2) (1)
001aah490
10-2
10-3 10
102
103
104 f (Hz)
105
(1) Po = 825 mW; Vi = 908.3 mV (RMS). (2) Po = 550 mW; Vi = 741.6 mV (RMS). (3) Po = 275 mW; Vi = 524.4 mV (RMS).
a. RL = 4
1 THD+N (%)
(1)
001aah491
10-1
(2) (3)
10-2
10-3 10
102
103
104 f (Hz)
105
(1) Po = 560 mW; Vi = 1.058 V (RMS). (2) Po = 375 mW; Vi = 866 mV (RMS). (3) Po = 190 mW; Vi = 616.4 mV (RMS).
b. RL = 8
Gv(cl) = 6 dB.
Fig 6. Total harmonic distortion-plus-noise as a function of frequency; VDD = 3.6 V
SA58670_1
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Product data sheet
Rev. 01 -- 4 January 2008
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SA58670
2.1 W/channel stereo class-D audio amplifier
1 THD+N (%) 10-1
(1)
001aah492
10-2
(2) (3)
10-3 10
102
103
104 f (Hz)
105
(1) Po = 1.65 W; Vi = 1.285 V (RMS). (2) Po = 1.1 W; Vi = 1.05 V (RMS). (3) Po = 550 mW; Vi = 741.6 mV (RMS).
a. RL = 4
10 THD+N (%) 1
(1)
001aah493
10-1
(2)
10-2
(3)
10-3 10
102
103
104 f (Hz)
105
(1) Po = 1.16 W; Vi = 1.523 V (RMS). (2) Po = 775 mW; Vi = 1.245 V (RMS). (3) Po = 380 mW; Vi = 871.8 mV (RMS).
b. RL = 8
Gv(cl) = 6 dB.
Fig 7. Total harmonic distortion-plus-noise as a function of frequency; VDD = 5.0 V
SA58670_1
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Product data sheet
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SA58670
2.1 W/channel stereo class-D audio amplifier
-60 ct (dB) -80
(1) (2)
001aah495
-100
(3)
(4)
-120 103
104 f (Hz)
105
(1) VDD = 3.6 V; L channel to R channel. (2) VDD = 3.6 V; R channel to L channel. (3) VDD = 5.0 V; L channel to R channel. (4) VDD = 5.0 V; R channel to L channel.
Fig 8. Crosstalk (stepped all-to-one) as a function of frequency
10-3 Vn(o) (V) 10-4
(1) (2)
001aah497
10-5
10-6 10
102
103 f (Hz)
104
(1) Left channel. (2) Right channel.
Fig 9. Noise output voltage (RMS value) as a function of frequency
SA58670_1
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Product data sheet
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SA58670
2.1 W/channel stereo class-D audio amplifier
-60 ct (dB) -80
(1) (2)
001aah505
(3)
-100
-120 2 4 6 8 10 12 14 16 18 f (kHz) 20
a. RL = 4
-60 ct (dB) -80
(1) (2)
001aah506
-100
(3)
-120 2 4 6 8 10 12 14 16 18 f (kHz) 20
b. RL = 8
(1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V.
Fig 10. Crosstalk (one-to-one) as a function of frequency
SA58670_1
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Product data sheet
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SA58670
2.1 W/channel stereo class-D audio amplifier
6 VDD (V) 4 3.6 V 2.5 V 2
001aah507
5.5 IDD (mA) 4.5
001aah508
(1) (2) (3)
5V
3.5
0 0 1 2 VSDR; VSDL (V) 3
2.5 2.5
3.5
4.5 VDD (V)
5.5
(1) left channel; RL = 8 . (2) right channel; RL = 4 . (3) right channel; RL = 8 .
Fig 11. Supply voltage as a function of shutdown voltage
Fig 12. Supply current as a function of supply voltage
1600 IDD (mA) 1200
001aah509
800 IDD (mA) 600
001aah510
800
(1) (2) (3)
400
(1) (2) (3)
400
200
0 0 0.4 0.8 1.2 1.6 Po (W) 2.0
0 0 0.4 0.8 1.2 Po (W) 1.6
a. RL = 4
(1) VDD = 2.5 V. (2) VDD = 3.6 V. (3) VDD = 5.0 V.
b. RL = 8
Fig 13. Supply current as a function of output power
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Product data sheet
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SA58670
2.1 W/channel stereo class-D audio amplifier
0.8 P (W) 0.6
(2)
001aah511
(1)
0.4 P (W) 0.3
001aah512
(1)
0.4
(3)
0.2
(2)
0.2
0.1
(3)
0 0 0.4 0.8 1.2 1.6 Po (W) 2.0
0 0 0.4 0.8 1.2 Po (W) 1.6
a. RL = 4
(1) VDD = 5.0 V. (2) VDD = 3.6 V. (3) VDD = 2.5 V.
b. RL = 8
Fig 14. Power dissipation as a function of output power
100 po 80
(3) (2)
001aah513
100 po
001aah514
(1)
80
(1) (3) (2)
60
60
40
40
20
20
0 0 0.4 0.8 1.2 1.6 Po (W) 2.0
0 0 0.4 0.8 1.2 Po (W) 1.6
a. RL = 4
(1) VDD = 5.0 V. (2) VDD = 3.6 V. (3) VDD = 2.5 V.
b. RL = 8
Fig 15. Output power efficiency as a function of output power
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SA58670
2.1 W/channel stereo class-D audio amplifier
11. Application information
differential inputs left channel
1 F 1 F
differential inputs right channel
1 F 1 F
VDD INLP INLN G1
FB
VDD AGND INRN INRP G0
FB
OUTLP
1 nF FB
OUTRP
1 nF
OUTLN
1 nF
SA58670
FB
OUTRN
1 nF
VDD
10 F 1 F
PVDD
PVDD
1 F
VDD
10 F
PGND SDL SDR AVDD
PGND
VDD
1 F 10 F
001aah515
Fig 16. SA58670 application schematic
11.1 Power supply decoupling considerations
The SA58670 is a stereo class-D audio amplifier that requires proper supply voltage decoupling to ensure the rated performance for THD+N and power efficiency. To decouple high frequency transients, supply voltage spikes and digital noise on the supply voltage bus line, a low Equivalent Series Resistance (ESR) capacitor of typically 1 F is placed as close as possible to the PVDD pins of the SA58670. It is important to place the decoupling capacitor at the supply voltage pins of the SA58670 because any resistance or inductance in the PCB trace between the SA58670 and the capacitor can cause a loss in efficiency. Additional decoupling using a larger capacitor, 4.7 F or greater, may be done on the supply voltage connection on the PCB to filter low frequency signals. Usually this is not required due to high PSRR of the SA58670.
11.2 Input capacitor selection
The SA58670 does not require input coupling capacitors when used with a differential audio source that is biased from 0.5 V to VDD - 0.8 V. In other words, the input signal must be biased within the common-mode input voltage (Vi(cm)) range. If high-pass filtering is required or if it is driven using a single-ended source, input coupling capacitors are required. The 3 dB cut-off frequency created by the input coupling capacitor and the input resistors (see Table 6) is calculated by Equation 1: 1 f -3dB = ----------------------------2 x R i x C i
SA58670_1
(1)
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Product data sheet
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SA58670
2.1 W/channel stereo class-D audio amplifier
Gain selection G0 LOW HIGH LOW HIGH Gain (V/V) 2 4 8 16 Gain (dB) 6 12 18 24 Input impedance (k) 28.1 17.3 9.8 5.2
Table 6. G1 LOW LOW HIGH HIGH
Since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio amplifier, it is important to consider this during the system design. Small speakers in wireless and cellular phones usually do not respond well to low frequency signals, so the 3 dB cut-off frequency may be increased to block the low frequency signals to the speakers. Not using input coupling capacitors may increase the output offset voltage. Equation 2 is solved for Ci: 1 C i = ------------------------------------2 x R i x f -3dB (2)
11.3 PCB layout considerations
Component location is very important for performance of the SA58670. Place all external components very close to the SA58670. Placing decoupling capacitors directly at the power supply voltage pins increases efficiency because the resistance and inductance in the trace between the SA58670 power supply voltage pins and the decoupling capacitor causes a loss in power efficiency. The trace width and routing are also very important for power output and noise considerations. For high current pins (PVDD, PGND and audio output), the trace widths should be maximized to ensure proper performance and output power. Use at least 500 m wide traces. For the input pins (INRP, INRN, INLP and INLN), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation.
11.4 Filter-free operation and ferrite bead filters
A ferrite bead low-pass filter can be used to reduce radio frequency emissions in applications that have circuits sensitive to frequencies greater than 1 MHz. A ferrite bead low-pass filter functions well for amplifiers that must pass FCC unintentional radiation requirements for frequencies greater than 30 MHz. Choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. In order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. For applications in which there are circuits that are EMI sensitive to low frequencies (< 1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC output filter.
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SA58670
2.1 W/channel stereo class-D audio amplifier
11.5 Efficiency and thermal considerations
The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In Table 3 "Limiting values", the power derating factor is given as 41.6 mW/K. The device thermal resistance, Rth(j-a) is the reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by Equation 3: 1 1 R th ( j-a ) = ----------------------------------------- = --------------- = 24 K /W derating factor 0.0416 (3)
For a maximum allowable junction temperature Tj = 150 C and Rth(j-a) = 24 K/W and a maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel output power, 4 load, 5 V supply, the maximum ambient temperature is calculated using Equation 4: T amb ( max ) = T j ( max ) - ( R th ( j-a ) x P max ) = 150 - ( 24 x 1.5 ) = 114 C (4)
The maximum ambient temperature is 114 C at maximum power dissipation for 5 V supply and 4 load. If the junction temperature of the SA58670 rises above 150 C, the thermal protection circuitry turns the SA58670 off; this prevents damage to IC. Using speakers greater than 4 further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency.
11.6 Additional thermal information
The SA58670 HVQFN20 package incorporates an exposed DAP that is designed to solder the mount directly to the PCB heat spreader. By the use of thermal vias, the DAP may be soldered directly to a ground plane or special heat sinking layer designed into the PCB. The thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lowest package thermal resistance.
SA58670_1
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Product data sheet
Rev. 01 -- 4 January 2008
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SA58670
2.1 W/channel stereo class-D audio amplifier
12. Package outline
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm
SOT917-1
D
B
A
terminal 1 index area E A A1 c
detail X
e1 e 6 L 11 5 Eh 1 15 e e2 b 10 vMCAB wMC y1 C
C y
terminal 1 index area
20 Dh
16 X
0 DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. 1 A1 0.05 0.00 b 0.30 0.18 c 0.2 D(1) 4.1 3.9 Dh 2.45 2.15 E(1) 4.1 3.9 Eh 2.45 2.15 e 0.5
2.5 scale
5 mm
e1 2
e2 2
L 0.6 0.4
v 0.1
w 0.05
y 0.05
y1 0.1
Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT917 -1 REFERENCES IEC --JEDEC MO-220 JEITA --EUROPEAN PROJECTION ISSUE DATE 05-10-08 05-10-31
Fig 17. Package outline SOT917-1 (HVQFN20)
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SA58670
2.1 W/channel stereo class-D audio amplifier
13. Soldering
This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 "Surface mount reflow soldering description".
13.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization.
13.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following:
* Through-hole components * Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are:
* * * * * *
Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus PbSn soldering
13.3 Wave soldering
Key characteristics in wave soldering are:
* Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are exposed to the wave
* Solder bath specifications, including temperature and impurities
SA58670_1 (c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 4 January 2008
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NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
13.4 Reflow soldering
Key characteristics in reflow soldering are:
* Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 18) than a PbSn process, thus reducing the process window
* Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
* Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8
Table 7. SnPb eutectic process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 2.5 2.5 Table 8. 235 220 Lead-free process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 1.6 1.6 to 2.5 > 2.5 260 260 250 350 to 2000 260 250 245 > 2000 260 245 245 350 220 220
Package thickness (mm)
Package thickness (mm)
Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 18.
SA58670_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 4 January 2008
21 of 25
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
temperature
maximum peak temperature = MSL limit, damage level
minimum peak temperature = minimum soldering temperature
peak temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 18. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365 "Surface mount reflow soldering description".
14. Abbreviations
Table 9. Acronym DAP DVD EMI ESR LC PC PCB PDA PWM USB Abbreviations Description Die Attach Paddle Digital Video Disc ElectroMagnetic Interference Equivalent Series Resistance inductor-capacitor filter Personal Computer Printed-Circuit Board Personal Digital Assistant Pulse Width Modulator Universal Serial Bus
SA58670_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 4 January 2008
22 of 25
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
15. Revision history
Table 10. Revision history Release date 20080104 Data sheet status Product data sheet Change notice Supersedes Document ID SA58670_1
SA58670_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 4 January 2008
23 of 25
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
16.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
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(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 4 January 2008
24 of 25
NXP Semiconductors
SA58670
2.1 W/channel stereo class-D audio amplifier
18. Contents
1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 11.1 11.2 11.3 11.4 11.5 11.6 12 13 13.1 13.2 13.3 13.4 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Typical performance curves . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . 16 Power supply decoupling considerations . . . . 16 Input capacitor selection . . . . . . . . . . . . . . . . . 16 PCB layout considerations . . . . . . . . . . . . . . . 17 Filter-free operation and ferrite bead filters. . . 17 Efficiency and thermal considerations . . . . . . 18 Additional thermal information . . . . . . . . . . . . 18 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Introduction to soldering . . . . . . . . . . . . . . . . . 20 Wave and reflow soldering . . . . . . . . . . . . . . . 20 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 20 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 21 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 23 Legal information. . . . . . . . . . . . . . . . . . . . . . . 24 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 24 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Contact information. . . . . . . . . . . . . . . . . . . . . 24 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 January 2008 Document identifier: SA58670_1

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