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| SI5476DU New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A)a 12 12 rDS(on) (W) 0.034 at VGS = 10 V 0.041 at VGS = 4.5 V Qg (Typ) 10.5 10 5 nC PowerPAKr ChipFETr Single 1 2 D D D D D D G S S D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr ChipFETr Package - Small Footprint Area - Low On-Resistance - Thin 0.8-mm Profile RoHS COMPLIANT APPLICATIONS 3 4 D Load Switch for Portable Applications D DC-DC Switch for low power Synchronous Rectification D Intermediate Switch Driver for D DC/DC Applications Marking Code AA XXX Lot Traceability and Date Code Part # Code G 8 7 6 5 Bottom View Ordering Information: SI5476DU-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain Avalanche Current Single Pulse Avalanche Energy L = 0 1 mH 0.1 TC = 25 _C Maximum Power Dissipation TC = 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 _C TA = 25 _C IDM IS IAS EAS ID Symbol VDS VGS Limit 60 " 20 12a 12a 7b, c 5.6b, c 25 12a 2.6b, c 15 11.2 31 20 3.1b, c 2b, c - 55 to 150 260 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t p 5 sec Steady State Symbol RthJA RthJC Typical 34 3 Maximum 40 4 Unit _C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 _C/W. Document Number: 73663 S-60219--Rev. A, 20-Feb-06 www.vishay.com 1 SI5476DU Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VGS = 0 V, ID = 1 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = " 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 _C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.6 A VGS = 4.5 V, ID = 4.2 A VDS = 15 V, ID = 4.6 A 25 0.028 0.033 20 0.034 0.041 1 60 55 - 6.3 3 "100 1 10 mV/_C V ns mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 30 V, RL = 5.4 W ID ^ 5.6 A, VGEN = 10 V, Rg = 1 W VDD = 30 V, RL = 5.4 W ID ^ 5.6 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4.6 A VDS = 30 V, VGS = 4.5 V, ID= 4.6 A VDS = 30 V, VGS = 0 V, f = 1 MHz 1100 90 55 21 10.5 3.5 4.2 3.3 20 150 20 60 10 15 25 10 30 225 30 90 15 25 40 15 ns W 32 16 nC p pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. IS ISM VSD trr Qrr ta tb IF = 5 5 A di/dt = 100 A/ms TJ = 25 _C 5.5 A, A/ms, IS = 5.5 A, VGS = 0 V 0.85 25 25 19 6 ns TC = 25 _C 12 25 1.2 50 50 A V ns nC www.vishay.com 2 Document Number: 73663 S-60219--Rev. A, 20-Feb-06 SI5476DU New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 4 V I D - Drain Current (A) 5 Vishay Siliconix Transfer Characteristics I D - Drain Current (A) 20 4 TC = - 55 _C 15 3 TC = 125 _C 10 2 5 VGS = 3 V 1 TC = 25 _C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.040 rDS(on) - On-Resistance (mW) 1500 Capacitance 1200 0.036 VGS = 4.5 V C - Capacitance (pF) Ciss 900 0.032 VGS = 10 V 600 0.028 300 Coss 0.024 0 5 10 15 20 25 0 0 Crss 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) ID = 4.6 A 8 rDS(on) - On-Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 0 0 5 10 15 20 25 0.6 -50 2.0 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.6 A 6 VDS = 30 V VDS = 48 V 4 2 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 73663 S-60219--Rev. A, 20-Feb-06 TJ - Junction Temperature (_C) www.vishay.com 3 SI5476DU Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 rDS(on) - Drain-to-Source On-Resistance (W) 0.08 ID = 4.6 A On-Resistance vs. Gate-to-Source Voltage TJ = 150 _C I S - Source Current (A) 10 0.07 0.06 TA = 125 _C 0.05 0.04 TJ = 25 _C 0.03 TA = 25 _C 0.02 0 2 4 6 8 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 2.6 2.4 2.2 VGS(th) (V) 2.0 1.8 1.6 1.4 10 1.2 1.0 -50 0 0.001 ID = 250 mA Power (W) 40 50 Single Pulse Power, Junction-to-Ambient 30 20 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 BVDSS Limited *Limited by rDS(on) 10 I D - Drain Current (A) 100 ms 1 ms 1 10 ms 100 ms 0.1 TA = 25 _C Single Pulse 1s 10 s dc 10 100 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73663 S-60219--Rev. A, 20-Feb-06 www.vishay.com 4 SI5476DU New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* 24 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 25 50 75 100 125 150 Vishay Siliconix Power De-Rating 20 Power Dissipation (W) ID - Drain Current (A) 16 Package Limited 12 8 4 0 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73663 S-60219--Rev. A, 20-Feb-06 www.vishay.com 5 SI5476DU Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 _C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 0.1 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73663. www.vishay.com Document Number: 73663 S-60219--Rev. A, 20-Feb-06 6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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