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| VCE IC = = 3300 V 50 A IGBT-Die 5SMX 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1621-02 Sep 05 * * * * Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2500 V, VCEM 3300 V VGE 15 V, Tvj 125 C Limited by Tvjmax VGE = 0 V min max 3300 50 100 Unit V A A V s C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12M3300 IGBT characteristic values Parameter Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 1800 V, IC = 50 A, RG = 33 , VGE = 15 V, L = 2400 nH, inductive load VCC = 1800 V, IC = 50 A, RG = 33 , VGE = 15 V, L = 2400 nH, inductive load VCC = 1800 V, IC = 50 A, VGE = 15 V, RG = 33 , L = 2400 nH, inductive load, FWD: 1/2 5SLX12M3301 VCC = 1800 V, IC = 50 A, VGE = 15 V, RG = 33 , L = 2400 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C IC = 50 A, VGE = 15 V VCE = 3300 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 2.6 typ 3.1 3.8 max 3.5 100 Unit V V A A nA V nC nF ns ns ns ns 1000 -500 5.5 500 7.8 0.35 0.09 5 350 330 190 200 1140 1250 750 770 50 500 7.5 VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 10 mA, VCE = VGE, Tvj = 25 C IC = 50 A, VCE = 1800 V, VGE = -15 ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Turn-on switching energy Eon mJ 72 67 mJ 84 190 A Turn-off switching energy Eoff Short circuit current 2) ISC tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 2500 V, VCEM 3300 V Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1621-02 Sep 05 page 2 of 5 5SMX 12M3300 Mechanical properties Parameter Overall die L x W Dimensions exposed L x W (except gate pad) front metal gate pad thickness Metallization 3) 3) Unit 13.6 x 13.6 10.48 x 10.48 1.5 x 1.47 385 20 AlSi1 AlSi1 + TiNiAg 4 1.8 + 1.2 mm mm mm m m m LxW front (E) back (C) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1621-02 Sep 05 page 3 of 5 5SMX 12M3300 100 90 25C 80 70 60 IC [A] 50 40 30 20 10 0 0 1 2 3 VCE [V] 4 5 6 VGE = 15V IC [A] 125C 100 VCE = 20V 90 80 70 60 50 40 30 125C 20 25C 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 1 Typical on-state characteristics Fig. 2 Typical transfer characteristics 0.40 0.35 0.30 0.25 0.20 0.15 0.10 Eoff VCC = 1800 V RG = 33 ohm VGE = 15 V Tvj = 125 C L = 2400 nH Eon Eon, Eoff [J] 0.20 VCC = 1800 V IC = 50 A VGE = 15 V Tvj = 125 C L = 2400 nH 0.16 Eon, Eoff [J] 0.12 Eon 0.08 Eoff 0.04 0.05 0.00 0 25 50 75 Ic [A] 100 125 150 0.00 0 25 50 75 RG [ohm] 100 125 150 Fig. 3 Typical switching characteristics vs collector current Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1621-02 Sep 05 page 4 of 5 5SMX 12M3300 20 VCC = 1800 10 Cies 15 VCC = 2500 VGE [V] C [nF] 1 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Coes 10 0.1 Cres 5 IC = 50 A Tvj = 25 C 0 0.0 0.1 0.2 0.3 Qg [C] 0.4 0.5 0.01 0 5 10 15 20 VCE [V] 25 30 35 Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1621-02 Sep 05 |
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