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| 6MBP75RTB060 IPM-R3 series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 75A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol Min. VDC VDC(surge) VSC VCES *1 IC ICP -IC *2 PC *3 Tj VCC *4 Vin *5 Iin VALM *6 IALM *7 Tstg Topr Viso *8 0 0 200 0 -0.5 -0.5 -0.5 -40 -20 Rating Max. 450 500 400 600 75 150 75 198 150 20 Vcc+0.5 3 Vcc 20 125 100 AC2.5 3.5 *9 3.5 *9 V V V V A A A W C V V mA V mA C C kV N*m N*m Unit DC 1ms Duty=74.9% Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) Fig.1 Measurement of case temperature *1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W. *2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=74.9% *3 : Pc=125C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *6 : VALM shall be spplied to the voltage between terminal No. 16 and 10. *7 : IALM shall be applied to the input current to terminal No. 16. *8 : 50Hz/60Hz sine wave 1 minute. *9 : Recommendable Value : 2.5 to 3.0 N*m 6MBP75RTB060 Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) Symbol ICES VCE(sat) VF ton toff trr PAV Condition VCE=600V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VDC=300V,Tj=125C IC=75A Fig.1, Fig.6 VDC=300V, IC=75A Fig.1, Fig.6 Internal wiring inductance=50nH Main circuit wiring inductace=54nH Min. 1.2 40 Typ. 2.0 1.6 - IGBT-IPM Max. 1.0 2.4 2.6 3.6 0.3 - Unit mA V V s mJ Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Limiting resistor for alarm RALM Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Over Heating Protection Hysteresis Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH TCOH TCH VUV VH Condition Tj=125C Tj=125C Tj=125C Fig.4 surface of IGBT chips VDC=0V, Ic=0A, Case temperature Min. 113 150 110 11.0 0.2 Typ. 5 20 20 0.5 Max. -8 -125 12.5 Unit A s s C C C V Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.63 0.855 Unit C/W C/W - C/W Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 400 16.5 3.0 Unit V V Nm Weight Item Weight *9 : (For 1 device, Case is under the device) Symbol Wt Min. Typ. 450 Max. Unit g 6MBP75RTB060 IGBT-IPM Vin Vin(th) trr 90% 50% Ic 90% ton toff 10% on Vin(th) Figure 1. Switching Time Waveform Definitions off on Gate on Vge (Inside IPM) Fault (Inside IPM) /ALM normal Gate off on off /Vin alarm 2ms(typ.) tALM>Max. tALM>Max. tALM Fault : Over-current, Over-heat or Under-voltage Figure 2. Input / Output Timing Diagram tsc Ic IALM Ic IALM Figure. 4 Definition of tsc Ic IALM Vcc 20k VccU 20k DC 15V Sw1 GNDU Vcc DC 15V 20k VinX Sw2 GND Earth Cooling Fin Figure 5. Noise Test Circuit W 4700p P IPM L + Ic DC 300V P CT DC 15V HCPL4504 Vin VinU U AC200V V + GND N Figure 6. Switching Characteristics Test Circuit Icc Noise DC 15V P.G +8V fsw Vcc I PM Vin P U V W N GND N Figure 7. Icc Test Circuit 6MBP75RTB060 Block diagram VccU 3 IGBT-IPM P Pre-Driver VinU 2 GNDU 1 VccV 6 U Pre-Driver VinV 5 V GNDV 4 VccW 9 VinW 8 Pre-Driver GNDW 7 Vcc 11 W VinX 13 Pre-Driver GND 10 VinY 14 Pre-Driver VinZ 15 Pre-Driver NC 12 B NC N RALM ALM 16 Over heating protection circuit 1.5k Pre-driver include following functions 1 Amplifier for drive 2 Short circuit protection 3 Under voltage lockout circuit 4 Over current protection 5 IGBT chip over heating protection Outline drawings, mm Mass : 450g 6MBP75RTB060 Characteristics Control circuit characteristics (Respresentative) IGBT-IPM Power supply current vs. Switching frequency N-side Tc=125C ********* P-side 60 Input signal threshold voltage vs. Power supply voltage 2.5 Tj=25C ********* Tj=125C Power supply current Icc (mA) 50 2.0 40 Input signal threshold voltage Vin (ON), Vin (OFF), (V) 0 5 10 15 20 25 1.5 30 1.0 20 0.5 10 0 0 12 13 14 15 16 17 18 Switching frequency fsw (kHz) Power supply voltage Vcc (V) Under voltage vs. Junction temperature 14 1.0 Under voltage hysterisis vs. Junction temperature 12 Undervoltage hysterisis VH (V) 0.8 Under voltage VUVT (V) 10 8 0.6 6 0.4 4 0.2 2 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Junction temperature Tj (C) Junction temperature Tj (C) Alarm hold time vs. Power supply voltage 3.0 200 Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC Alarm hold time tALM (msec.) 2.5 Overheating protection TCOH,TjOH (C) OH hysterisis TCH,TjH (C) 150 2.0 1.5 100 1.0 50 0.5 0 12 0 13 14 15 16 17 18 12 13 14 15 16 17 18 Power supply voltage Vcc (V) Power supply voltage Vcc (V) 6MBP75RTB060 Main circuit characteristics (Respresentative) IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C(Chip) 80 70 60 80 70 60 Collector current vs. Collector-Emitter voltage Tj=25C(Terminal) Collector current Ic (A) Collector current Ic (A) 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V) Collector current vs. Collector-Emitter voltage Tj=125C(Chip) 80 70 60 Collector current vs. Collector-Emitter voltage Tj=125C(Terminal) 80 70 60 Collector current Ic (A) Collector current Ic (A) 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V) Forward current vs. Forward voltage (Chip) 150 150 Forward current vs. Forward voltage (Terminal) Forward current IF (A) 100 Forward current IF (A) 100 50 50 0 0 0.5 1 1.5 2 2.5 0 0 0.5 1 1.5 2 2.5 Foeward voltage VF (V) Foeward voltage VF (V) 6MBP75RTB060 IGBT-IPM Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=25C 6 6 Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=125C Switching loss Eon,Eoff, Err (mJ/cycle) Switching loss Eon,Eoff, Err (mJ/cycle) 5 5 4 4 3 3 2 2 1 1 0 0 20 40 60 80 0 0 20 40 60 80 Collector current IC (A) Collector current IC (A) Reverse biased safe operating area Vcc=15V, Tj <125C = 300 Transient thermal resistance Thermal resistance Rth(j-c) (C/W) 0 100 200 300 400 500 600 700 1 250 Collector current Ic (A) 200 150 0.1 100 50 0 0.01 0.001 0.01 0.1 1 Collector-Emitter voltage VCE (V) Pulse width Pw (sec.) Power derating for IGBT (per device) 250 200 Power derating for FWD (per device) Collector power dissipation Pc (W) 200 Collector power dissipation Pc (W) 0 20 40 60 80 100 120 140 160 150 150 100 100 50 50 0 0 0 20 40 60 80 100 120 140 160 Case temperature Tc (C) Case temperature Tc (C) 6MBP75RTB060 IGBT-IPM Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=25C 10000 10000 Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125C Switching time ton,toff,tf (nsec.) Switching time ton,toff,tf (nsec.) 20 40 60 80 100 120 1000 1000 100 100 10 10 20 40 60 80 100 120 Collector current Ic (A) Collector current Ic (A) Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current Irr (A) Reverse recovery time trr (nsec.) 100 10 1 20 40 60 80 100 120 Foeward current IF (A) |
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