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| AEGIS SEMICONDUTORES LTDA. A3L:90DT.XXI VOLTAGE RATINGS Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 125OC A3L:90TD.02I A3L:90TD.04I A3L:90TD.06I A3L:90TD.08I A3L:90TD.10I A3L:90TD.12I A3L:90TD.14I A3L:90TD.16I 200 400 600 800 1000 1200 1400 1600 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 125O C 300 500 700 900 1100 1300 1500 1700 TJ = -40 to 0OC 200 400 600 800 1000 1200 1330 1520 MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 90 85 200 1.61 IFSM Max. Peak non-rep. surge current 1.75 kA 1.72 1.87 9.48 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 125 C, no voltage applied after surge. O UNITS O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial TJ = 125 C, rated VRRM applied after surge. O C C C O A O IF(RMS) Nom. RMS current A 10.33 I t Max. I t capability 13.32 14.52 I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 159.1 kA2s1/2 2 2 t = 8.3 ms kA s t = 10ms t = 8.3 ms 2 Initial TJ = 125 C, rated VRRM applied after surge. O O Initial TJ = 125 C, no voltage applied after surge. 2 Initial TJ = 125OC, no voltage applied after surge. 2 1/2 1/2 tx . It 150 12 3 150 2 3(5) A/ms W W mA V N.m for time tx = I t * (0.1 < tx < 10ms). O TJ = 125 C, VD = VDRM , ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms Upper connectors(Heatsink) AEGIS SEMICONDUTORES LTDA. A3L:90DT.XXI CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. --------------80 ------50 4 2 ------------TYP. ----------0.7 125 140 --10 --80 --------------110(4) TO-240AA MAX. UNITS 1.63 0.89 2.42 400 200 1.5 200 500 25 20 300 150 --2.5 0.25 0.145 0.155 0.162 0.1 --mA mA V V V mW mA mA ms ms O TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 282A. O TJ = 125 C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125 C, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25 C, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. O TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125 C. Exp. to 100% or lin. Higher dv/dt values avaliable. To 80% V DRM, gate open. TJ = 125 C, Exp. To 67% V DRM, gate open. TJ = 125 C, Rated VRRM and VDRM, gate open. TC = -40 C TC = 25 C TC = -40 C O O O O O O O O O V/ms +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25 C TC = 25OC, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, single side cooled. O C/W 180 sine wave, single side cooled. O C/W 120 rectangular wave, single side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. ----- O g(oz.) JEDEC Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 120 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 120 110 110 100 100 90 30 90 30 80 60 80 60 90 90 70 120 180 70 120 180 DC 60 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 *Sinusoidal Waveform 60 *Rectangular Waveform 0 25 50 75 100 125 150 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A3L:90DT.XXI Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss 1500 Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 *Rectangular Waveform 1500 30 1000 60 60 90 90 120 180 DC 500 120 180 0 0 *Sinusoidal Waveform 25 50 75 100 125 150 175 200 225 0 50 100 150 200 Average Forward Current (A) Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Forward Voltage Drop 1 Transient Thermal Impedance ZthJC 1000 Instantaneous Forward Current (A) Transient Thermal Impedance ZthJC 1.5 2.0 2.5 3.0 3.5 0.1 100 125C 25C 10 0.5 1.0 0.01 0.01 0.1 1 10 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance AEGIS SEMICONDUTORES LTDA. A3L:90DT.XXI Fig. 7 - Gate Trigger Characteristics TO-240AA 1 ~ G1 K1 + K2 2 G2 - 3 1 2 3 Fig. 8 - Outline Characteristics 45 67 Fig. 9 - Circuit Layout |
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