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| April 2008 FDFMA3N109 General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Integrated N-Channel PowerTrench MOSFET and Schottky Diode Features MOSFET: * 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V RDS(ON) = 140 m @ VGS = 3.0 V RDS(ON) = 163 m @ VGS = 2.5 V Schottky: * VF < 0.46 V @ 500mA * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm * HBM ESD protection level = 1.8kV typical (Note 3) * RoHS Compliant (R) tm PIN 1 A NC K D D A NC 1 2 3 6K 5G 4S Absolute Maximum Ratings Symbol VDS VGS ID MicroFET 2x2 K G S TA=25oC unless otherwise noted D PD TJ, TSTG VRRM IO Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25C, VGS = 4.5V) - Continuous (TC = 25C, VGS = 2.5V) - Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Temperature Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Parameter Ratings 30 12 2.9 2.7 10 1.5 0.65 -55 to +150 28 1 Units V V A W C V A (Note 1a) (Note 1b) Thermal Characteristics RJA RJA RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 83 193 101 228 C/W Package Marking and Ordering Information Device Marking 109 Device FDFMA3N109 Reel Size 7'' Tape width 8mm Quantity 3000 units FDFMA3N109 Rev B2 (c)2008 Fairchild Semiconductor Corporation FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics Symbol BVDSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Test Conditions ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = 0 V VDS = 0 V Min Typ Max Units 30 25 1 10 0.4 1.0 -3 75 84 92 95 138 150 190 30 20 4.6 6 8 12 2 123 140 163 166 203 268 220 40 30 1.5 V mV/C A A V mV/C Off Characteristics BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ On Characteristics ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85C VGS = 3.0V, ID = 2.7A, TC = 150C VGS = 2.5V, ID = 2.5A, TC = 150C VDS = 15 V, f = 1.0 MHz V GS = 0 V, VDD = 15 V, VGS = 4.5 V, V GS = 0 V, RDS(on) Static Drain-Source On-Resistance m Dynamic Characteristics Ciss Input Capacitance Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) pF pF pF f = 1.0 MHz ID = 1 A, RGEN = 6 Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 12 16 21 4 3.0 ns ns ns ns nC nC nC VDS = 15 V, VGS = 4.5 V ID = 2.9 A, 2.4 0.35 0.75 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/s VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge 0.9 0.8 10 2 TJ = 25C TJ = 85C TJ = 25C TJ = 85C TJ = 25C TJ = 85C 10 0.07 0.50 0.49 0.40 0.36 2.9 1.2 1.2 A V ns nC Schottky Diode Characteristics IR VF VF Reverse Leakage Forward Voltage Forward Voltage VR = 28 V IF = 1 A IF = 500 mA 100 4.7 0.57 0.60 0.46 0.43 A mA V V FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Notes: 2 1. RJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) MOSFET RJA = 83C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET RJA = 193C/W when mounted on a minimum pad of 2 oz copper (d) Schottky RJA = 228C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RJA = 101C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB a) 83oC/W when mounted on 2 a 1in pad of 2 oz copper b) 193oC/W when mounted on a minimum pad of 2 oz copper c)101 oC/W when mounted on 2 a 1in pad of 2 oz copper b) 228oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5V 2.7V 3.5V 2.9V 2.0V 1.8 VGS = 2.0V ID, DRAIN CURRENT (A) 8 1.6 6 1.4 2.5V 4 1.2 2.7V 2.9V 3.5V 4.0V 4.5V 2 1.5V 1 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.8 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 ID = 1.45A 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 RDS(ON), ON-RESISTANCE (OHM) ID = 2.9A VGS = 4.5V 0.2 0.16 TA = 125 C o 0.12 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.08 TA = 25 C o 0.04 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V ID, DRAIN CURRENT (A) 8 25oC 125 C o 10 1 0.1 0.01 0.001 TA = 125 C 25oC -55oC o 6 4 2 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 300 ID = 2.9A 10 VGS, GATE-SOURCE VOLTAGE (V) 8 250 CAPACITANCE (pF) VDS = 10V 15V 20V f = 1MHz VGS = 0 V 200 Ciss 6 150 100 50 Crss 4 Coss 2 0 0 1 2 3 4 Qg, GATE CHARGE (nC) 5 6 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 10 IF, FORWARD LEAKAGE CURRENT (A) IR, REVERSE LEAKAGE CURRENT (A) Figure 8. Capacitance Characteristics. 0.1 o 1 TJ = 125 C 0.1 TJ = 25 C o o 0.01 TJ = 125 C 0.001 TJ = 100 C 0.0001 o 0.01 0.00001 TJ = 25 C 0.000001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 o 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0.7 0.8 Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 10. Schottky Diode Reverse Current. 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =193C/W P(pk) t1 t2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 FDFMA3N109 Rev B2 FDFMA3N109 Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDFMA3N109 Rev B2 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production |
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