 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : EN8741 FTD1028 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FTD1028 Features * * * * General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings --20 10 --3 --15 0.8 1.0 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-20V, VGS=0V VGS=8V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-2A ID=--2A, VGS=-4V ID=--1A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --20 --1 10 --0.4 3.8 6.3 55 81 900 125 115 16 54 107 82 77 113 --1.4 typ max Unit V A A V S m m pF pF pF ns ns ns ns Marking : D1028 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92706PE MS IM TC-00000216 No.8741-1/4 FTD1028 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-4V, ID=-3A VDS=--10V, VGS=-4V, ID=-3A VDS=--10V, VGS=-4V, ID=-3A IS=--3A, VGS=0V Ratings min typ 9.3 2.5 1.9 --0.84 --1.2 max Unit nC nC nC V Package Dimensions unit : mm (typ) 7006A-002 Electrical Connection 8 0.95 7 6 5 3.0 0.125 8 5 0.5 1 0.95 4 0.25 0.65 0.05 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 1 2 3 4 6.4 4.5 Top view Switching Time Test Circuit VIN 0V --4V VIN ID= --2A RL=5 VDD= --10V 0.425 D PW=10s D.C.1% VOUT G FTD1028 P.G 50 S No.8741-2/4 FTD1028 --3.5 ID -- VDS --8.0 --10.0V V --6.0V --4.0 V --3.0 V --2. 5V --3.5 ID -- VGS VDS= --10V --3.0 . --2 0V --3.0 Drain Current, ID -- A --2.5 Drain Current, ID -- A --2.5 --2.0 --1.5V --2.0 --1.5 --1.5 Ta=7 5C 0 --0.5 --1.0 --1.0 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 VGS= --1.0V --0.5 --0.6 --0.7 --0.5 0 25 --1.5 C --25C --2.0 --2.5 IT08666 Drain-to-Source Voltage, VDS -- V 140 IT08665 140 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 100 ID= --1A --2A 100 80 80 , --1A I D= .5V = --2 VGS 60 60 40 40 V = --4.0 , V GS = --2A ID V = --4.5 , V GS = --2A ID 20 0 0 --2 --4 --6 --8 --10 --12 IT08667 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.001 2 3 57 --0.01 2 3 5 7--0.1 23 5 7--1.0 23 yfs -- ID 25 Ambient Temperature, Ta -- C 7 5 3 2 IT08668 IS -- VSD VGS=0V VDS= --10V C Source Current, IS -- A = Ta -- C 25 --1.0 7 5 3 2 C 75 5C 25 C --0.6 3 2 --0.01 7 5 3 2 5 7 --10 IT08669 --0.001 --0.3 --0.4 --0.5 Ta= 7 --0.7 --25 C --0.8 --0.1 7 5 --0.9 --1.0 --1.1 Drain Current, ID -- A 1000 7 5 SW Time -- ID VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT08670 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 --0.01 td(off) 1000 7 5 3 2 Ciss tf td(on) tr Coss 100 7 5 3 Crss 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT08671 0 --5 --10 --15 --20 --25 --30 IT08672 Drain-to-Source Voltage, VDS -- V No.8741-3/4 FTD1028 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 VGS -- Qg VDS= --10V ID= --3.5A Drain Current, ID -- A 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --15A PW10s Gate-to-Source Voltage, VGS -- V 1m ID= --3A s 10 10 0 s DC 10 0m ms op s era tio n( Ta = Operation in this area is limited by RDS(on). 25 C ) --0.01 --0.01 Ta=25C Single pulse Mounted on a ceramic board (1000mm2!0.8mm) 1unt 23 5 7 --0.1 23 5 7 --1.0 23 Total Gate Charge, Qg -- nC 1.2 IT08673 PD -- Ta Mounted on a ceramic board (1000mm2!0.8mm) Drain-to-Source Voltage, VDS -- V 5 7 --10 2 3 IT11555 Allowable Power Dissipation, PD -- W 1.0 0.8 To t 0.6 al Di ss ip ati 0.4 1u on nit 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT11556 Note on usage : Since the FTD1028 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. PS No.8741-4/4 |
Price & Availability of FTD1028
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |