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MBR20200CT -- Dual High Voltage Schotty Rectifier
August 2008
MBR20200CT
Dual High Voltage Schotty Rectifier Features:
* Low Forward Voltage Drop * Low Power Loss and High Efficiency * High Surge Capability * Rohs Compliant * Matte Tin(Sn) Lead Finish * Terminal Leads Surface is Corrosion Resistant and can withstand to 260C * Wave Soldering or per MIL-STD-750 Method 2026. 1 Mark : MBR20200CT PIN3 PIN2 PIN1
+ _
Absolute Maximum Ratings*
Symbol
VRRM VR IF(AV) IFSM TSTG TJ
Ta = 25C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current, Tc=115C Peak Forward Surge Current, 8.3mS Half Sine wave Storage Temperature Range Operating Junction Temperature
Value
200 200 10 (Per Leg) 20(Per Device) 150 -55 ~ 150 150
Unit
V V A A C C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RJC RJA
Ta=25C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case per Leg Thermal Resistance, Junction to Ambient per Leg
Max
1.5 62.5
Unit
C/W C/W
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics*
Symbol
IR
Ta=25C unless otherwise noted
Parameter
Reverse Current
Test Condition
VR= 200V VR= 200V IF= 10A IF= 10A IF= 20A IF= 20A TC = 25 C TC = 125 C TC = 25 C TC = 125 C TC = 25 C TC = 125 C
Min.
Max.
0.2 5 0.9 0.8 1.0 0.9
Unit
mA
VF
Forward Voltage
V
* DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2%
(c) 2008 Fairchild Semiconductor Corporation MBR20200CT Rev. 1.0.0 1
www.fairchildsemi.com
MBR20200CT -- Dual High Voltage Schotty Rectifier
Typical Performance Characteristics
Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current
1000
10
100
Forward Current, IF[A]
Reverse Current, IR[uA]
TJ=125 C
10
o
1
T J=125 C T J=75 C
o
o
1
TJ=75 C
0.1
o
0.1
T J=25 C
o
0.01
0.01 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1E-3 50
TJ=25 C
100 150 200
o
Forward Voltage Drop, V F[V]
Reverse Voltage, VR[V]
Figure 3.Junction Capacitance
1 0.9 0.8 0.7
Figure 4. Power Derating
30
f=1mhz
[A]
Juntion Capacitance, CJ[nF]
F(AV)
25
0.6 0.5 0.4 0.3
DC
20
Average Forward Current, I
15
10
0.2
5
0.1 0 2 4 6 8 10
0 0 25 50 75 100
o
125
150
Reverse Voltage, V R[V]
Case Temperature, T C[ C]
(c) 2008 Fairchild Semiconductor Corporation MBR20200CT Rev. 1.0.0 2
www.fairchildsemi.com
MBR20200CT -- Dual High Voltage Schotty Rectifier
Package Dimensions
TO-220(DUAL GAUGE)
Dimensions in Millimeters
(c) 2008 Fairchild Semiconductor Corporation MBR20200CT Rev. 1.0.0 3 www.fairchildsemi.com
MBR20200CT MBR20200CT Dual High Voltage Schotty Rectifier
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
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PDP-SPMTM Power220(R)
Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM The Power Franchise(R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
(c) 2008 Fairchild Semiconductor Corporation MBR20200CT Rev. 1.0.0 4
www.fairchildsemi.com

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