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| Thermosensors TS105-1 / TS105-2 THERMOPILES are used for non-contact surface temperature measuring. Any object emits infrared radiation. The radiation power is increasing with growing surface temperatures. Based on this relation, THERMOPILES measure the emitted power and determine the object's temperature precisely. Function Principle THERMOPILES are based on the Seebeck effect, which is used since a long time for conventional thermocouples. The application of micromechanics and thin film technology allows the production of miniaturized and cost effective sensor elements. absorption area (hot junctions) SiNx-membrane silicon substrate (cold junctions) A multitude of thermojunctions deposited on a silicon substrate is connected in series to form a THERMOPILE. The hot junctions are thermally insulated from the cold junctions on the substrate by etching a self-supporting extremly thin membrane. An absorbing layer on the hot junctions transforms the incoming radiation into heat. A voltage proportional to the radiation is generated by the thermoelectric effect. The sensors are delivered in TO5-packages. Different housings and filter types can be selected to find an optimal solution for each application. Chips without housing are available as well. Technical Data Parameter Number of thermojunctions Material Active Area Chip Size Resistance of Thermopiles TC of resistance Sensitivity of sensor TC of sensitivity Specific detectivity Noise equivalent power Noise voltage Time constant Operation temperature Storage temperature Filter Symbol n AA AC R TCR SC TCS D* NEP UN t63 T T mm mm k %/K V/W %/K cm*Hz1/2 / W nW nV / Hz1/2 ms C C Unit Value 100 BiSb, NiCr 0.7 * 0,7 2.0 * 2.0 50 15 -0.03 0.02 typical 110 -0.52 0.08 2.1 * 108 0.35 37 40 10 -20 ... 100 -40 ... 100 Condition 100 90 80 25 C +25...+75 C 25C, 500 K, DC +25...+75 C 500 K, DC 500 K, 1 Hz 500 K, 1 Hz 500 K, 1 Hz Transmission (%) 70 60 50 40 30 20 10 0 4 5 6 7 8 9 10 11 12 13 14 W avelength (um ) Reference Resistor Resistance RNi 0 C 1000 0.4% TC of resistance TCRNi ppm / K 6178 1% 0 C...100 C Function: R(T) = 1000 + 6,17*T*, for detailled information see data sheet of reference resistor Sensors in thin film technology HL-Planartechnik GmbH Hauert 13 44 227 Dortmund Tel.: ++49 / (0)231 / 97400 Fax.: ++49 / (0)231 / 974020 105_12_e_01 March 1999 Thermosensors TS105-1 / TS105-2 Connecting Diagramm TS105-1 TS105-2 bottom view Output Voltage versus Objekt Temperature 14 Output Voltage [mV] 12 10 8 6 4 2 0 25 50 75 100 125 150 175 200 225 Conditions: Distance Thermopile/Black Body 5 cm, emissivity= 1, surrounding temperature 25C Tables with emissivity of different materials and surfaces are available. Object Temperature [C] Housing TO 5 TS105-1 TS105-2 Applications * * * * * * * * contactless measurement of surface temperatures or IR-Radiation temperature measurement at moving objects continous temperature control in manufacturing processes thermal alarm systems further applications in safety-, consumer-, environmental technics and automotive systems absorbing measurement for gas analysis (see special data sheet) climate control systems medical instruments Further products with different filters and packages are available, see separate data sheets Technical data are subject to change without notice Sensors in thin film technology HL-Planartechnik GmbH Hauert 13 44 227 Dortmund Tel.: ++49 / (0)231 / 97400 Fax.: ++49 / (0)231 / 974020 105_12_e_01 March 1999 |
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