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2SK2590
Silicon N Channel MOS FET
REJ03G1021-0300 (Previous: ADE-208-1365A) Rev.3.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G 1. Gate 2. Drain (Flange) 3. Source S
1
2
3
Rev.3.00 Sep 07, 2005 page 1 of 6
2SK2590
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 200 20 7 28 7 50 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 20 20 -- -- 2.0 -- 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.33 4.5 700 260 45 20 45 50 35 1.1 150 Max -- -- 10 250 4.0 0.45 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS =160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*1 ID = 4 A, VDS = 10 V*1 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5
IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s
Rev.3.00 Sep 07, 2005 page 2 of 6
2SK2590
Main Characteristics
Power vs. Temperature Derating
80 50 30
Maximum Safe Operation Area
10
Channel Dissipation Pch (W)
10
s
Drain Current ID (A)
60
10
D C
PW
pe O
0
s
=
1 m s
10
3
m
s
40
(1
Operation in 1 this area is limited by RDS(on)
Sh
ra tio n (T
ot
)
c = 25
20
0.3 0.1 0.05 Ta = 25C 1 3 10 30
C )
0
50
100
150
200
100
300
1000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 10 10 V 6V 5.5 V Pulse Test 8
Typical Transfer Characteristics
Drain Current ID (A)
8 6 4 2
Drain Current ID (A)
Pulse Test VDS = 10 V
5V 4.5 V
6 4 75C 2 Tc = 25C -25C
4V VGS = 3.5 V
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
2.0 5A
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
10 5 Pulse Test
1.6
Static Drain to Source on State Resistance RDS (on) ()
1.2 0.8
Pulse Test
2 VGS = 10 V 1 0.5
2A
15 V
0.4
ID = 1 A
0.2 0.1 0.5
0
4
8
12
16
20
1
2
5
10
20
50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 3 of 6
2SK2590
Static Drain to Source on State Resistance vs. Temperature
1.0 0.8 0.6 0.4 0.2 0 -40
Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
50 VDS = 10 V Pulse Test
20 10 5
ID = 5 A
Tc = 25C -25C 75C
1 A, 2 A
2 1 0.5 0.1
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
500 1000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss
Capacitance C (pF)
200 100 50 20 10 5 0.2 di/dt = 100 A/ s, VGS = 0 Ta = 25C
100
Coss
10 VGS = 0 f = 1 MHz 1
Crss
0.5
1
2
5
10
20
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
VGS VDD = 150 V 100 V 50 V
Switching Characteristics
Gate to Source Voltage VGS (V)
20 500 VGS = 10 V, VDD = 30 V PW = 2 s, duty < 1% =
* *
500
Switching Time t (ns)
400
16
200 100 50 tf
300
ID = 7 A
VDS VDD = 150 V 100 V 50 V 8 16 24 32
12
td(off)
200 100
8 4
20 10 5
td(on) tr
0
0 40
0.1 0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 6
2SK2590
Reverse Drain Current vs. Source to Drain Voltage
10
Reverse Drain Current IDR (A)
Pulse Test 8
6 VGS = 10 V
4
0, -5 V
2
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 1.0 D=1 0.5 0.3 0.1
0.2
0.1 0.05 0.02
ul 1 0.0 hot P 1S se
TC = 25C 25
0.03
ch-c (t) = s (t) * ch-c ch-c = 2.5C/W, TC = 25C PDM D =PW T PW T 1m 10 m 100 m 1 10
0.01 10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T. RL Vout Vin 10 V 50 VDD . = 30 V . Vin 10% 10%
Waveforms
90%
10% 90% td (off)
90% td (on) tr
tf
Rev.3.00 Sep 07, 2005 page 5 of 6
2SK2590
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK2590-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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