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| CHA5294 RoHS COMPLIANT 30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15m gate length. Vd1 Vd2 Vd3 Vd4 IN OUT Vg1 It is available in chip form. Vg2 Vg3 Vg4 Vd4 Typical on jig Measurements 30 Main Features Performances: 30-40GHz 22dBm output power @ 1dB comp. 24 dB gain DC power consumption, 500mA @ 3.5V Chip size: 4.10 x 1.42 x 0.07mm 28 26 24 22 20 18 Pout at 1dB comp. (dBm) Linear Gain (dB) 16 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Main Characteristics Tamb. = 25 C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 30 Typ 24 22 500 Max 40 Unit GHz dB dBm mA ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHA52948205 - 23 Jul 08 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5294 Tamb = +25 C Symbol Fop G 30-40GHz Medium Power Amplifier Electrical Characteristics on wafer (1) Parameter Operating frequency range Small signal gain from 30 to 34GHz from 34 to 40GHz G Is P1dB Small signal gain flatness Reverse isolation Pulsed output power at 1dB compression from 30 to 34GHz from 34 to 40GHz Psat Saturated power from 30 to 34GHz from 34 to 40GHz IP3 Output Intercept point 3rd order from 30 to 34GHz from 34 to 40GHz VSWRin VSWRout Vd Id Input VSWR Output VSWR Drain bias DC voltage Bias current @ small signal Min 30 Typ Max 40 Unit GHz dB dB dB dBm 24.5 23 1.5 40 23 22 24.5 23 30 28 2.0:1 4.0:1 3.5 500 650 dBm dBm V mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25 (1) C Symbol Vd Id Vg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage with Pin max= -2dBm Drain bias current with Vd=3.5V in small signal Gate bias voltage Maximum peak input power overdrive with Vd=3.5V (2) Maximum channel temperature Operating temperature range Storage temperature range Values +4.0 700 -2 to +0.4 +6.0 +175 -40 to +80 -55 to +125 Unit V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52948205 - 23 Jul 08 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 30-40GHz Medium Power Amplifier Typical on Jig Measurements in CW mode Bias conditions: Vd=3.5V CHA5294 Linear Gain & Output Power at 1dB compression vs frequency 30 28 26 24 22 20 18 Pout at 1dB comp. (dBm) Linear Gain (dB) 16 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Drain current versus input power 650 625 600 575 550 Id (mA) 525 500 475 450 425 400 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Input power (dBm) 32GHz 34GHz 38GHz 40GHz Ref. : DSCHA52948205 - 23 Jul 08 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5294 30-40GHz Medium Power Amplifier Chip Assembly and Mechanical Data To Vd DC Drain Supply 10nF 120pF Vd1 Vd2 Vd3 Vd4 Vg1 Vg2 Vg3 Vg4 120pF 10nF To Vg DC Gate Supply Note: Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Ref. : DSCHA52948205 - 23 Jul 08 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 30-40GHz Medium Power Amplifier Bonding pad positions ( Chip thickness : 70m) CHA5294 Ref. : DSCHA52948205 - 23 Jul 08 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5294 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage 30-40GHz Medium Power Amplifier Due to 70m thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5294-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52948205 - 23 Jul 08 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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