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| FDD4243 40V P-Channel PowerTrench(R) MOSFET FDD4243 40V P-Channel PowerTrench(R) MOSFET -40V, -14A, 44m Features General Description Max rDS(on) = 44m at VGS = -10V, ID = -6.7A Max rDS(on) = 64m at VGS = -4.5V, ID = -5.5A High performance trench technology for extremely low rDS(on) RoHS Compliant November 2007 This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Application Inverter Power Supplies S G S D G D O -2 52 T -PA K (TO -252) D MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25C (Note 1a) (Note 3) TC= 25C TC= 25C TA= 25C (Note 1) (Note 1a) Ratings -40 20 -14 -24 -6.7 -60 84 42 3 -55 to +150 mJ W C A Units V V Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.0 40 C/W Package Marking and Ordering Information Device Marking FDD4243 Device FDD4243 Package D-PAK(TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDD4243 Rev.C1 1 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -32V, VGS = 0V TJ = 125C VGS = 20V, VGS = 0V -40 -32 -1 -100 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -6.7A VGS = -4.5V, ID = -5.5A VGS = -10V, ID = -6.7A, TJ = 125C VDS = -5V, ID = -6.7A -1.4 -1.6 4.7 36 48 53 16 44 64 69 S m -3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 1165 165 90 4 1550 220 135 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD = -20V, ID = -6.7A VGS = -10V VDD = -20V, ID = -6.7A VGS = -10V, RGEN = 6 6 15 22 7 21 3.4 4 12 26 35 14 29 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -6.7A (Note 2) 0.86 29 30 1.2 43 44 V ns nC IF = -6.7A, di/dt = 100A/s Notes: 1: RJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJC is determined by the user's board design. a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V. FDD4243 Rev.C1 2 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 60 -ID, DRAIN CURRENT (A) 3.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.0V 50 40 30 20 10 0 0 VGS = -10V VGS = - 6V VGS = -5V 3.0 2.5 2.0 1.5 1.0 0.5 VGS = -4.5V VGS = -4V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = - 3.0V VGS = -4V VGS = -4.5V VGS = -5V VGS = -6V VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 10 20 30 40 -ID, DRAIN CURRENT(A) 50 60 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 120 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -6.7A VGS = -10V ID = -6.7A 100 80 60 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 125oC TJ = 25oC 40 20 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 30 VGS = 0V 60 50 40 30 20 10 0 1 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 10 TJ = 150oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = -55oC 1 TJ = -55oC 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 0.1 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD4243 Rev.C1 3 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = -6.7A 3000 VDD = -10V 8 6 4 2 0 CAPACITANCE (pF) 1000 Ciss VDD = -20V VDD = -30V Coss 100 50 0.1 f = 1MHz VGS = 0V Crss 0 4 8 12 16 20 24 Qg, GATE CHARGE(nC) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 25 -ID, DRAIN CURRENT (A) 20 15 10 5 RJC = 3.0 C/W o 10 -IAS, AVALANCHE CURRENT(A) 8 6 4 TJ = 25oC VGS = -10V Limited by Package VGS = -4.5V 2 TJ = 125oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 30 0 25 50 75 100 125 o 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 FOR TEMPERATURES 100 -ID, DRAIN CURRENT (A) 100us VGS = -10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 - TC --------------------125 TC = 25oC 10 1000 I = I25 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10ms 100ms 100 SINGLE PULSE 0.1 0.5 1 10 100 30 -5 10 10 -4 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -3 -2 -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD4243 Rev.C1 4 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.003 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD4243 Rev.C1 5 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. 6 www.fairchildsemi.com No Identification Needed Full Production Obsolete Not In Production FDD4243 Rev.C1 |
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