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| FDS8984 N-Channel PowerTrench(R) MOSFET May 2007 FDS8984 N-Channel PowerTrench(R) MOSFET 30V, 7A, 23m General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. tm Features Max rDS(on) = 23m, VGS = 10V, ID = 7A Max rDS(on) = 30m, VGS = 4.5V, ID = 6A Low gate charge 100% RG tested RoHS Compliant D1 D D1 D DD2 D2 D 5 6 Q2 4 3 2 Q1 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 7 8 S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous Pulsed Single Pulse Avalache Energy Power Dissipation for Single Operation Derate above 25C Operating and Storage Temperature (Note 2) (Note 1a) Ratings 30 20 7 30 32 1.6 13 -55 to 150 Units V V A A mJ W mW/C C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS8984 Device FDS8984 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDS8984 Rev. A1 1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V VGS = 0V TJ = 125C 30 23 1 250 100 V mV/C A nA VGS = 20V,VDS = 0V On Characteristics (Note 3) VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VDS = VGS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 7A Drain to Source On Resistance VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A, TJ = 125C 1.2 1.7 - 4.3 19 24 26 23 30 32 m 2.5 V mV/C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f = 1MHz 475 100 65 0.9 635 135 100 1.6 pF pF pF Switching Characteristics (Note 3) td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, VGS = 10V, ID = 7A VDS = 15V, VGS = 5V, ID = 7A VDD = 15V, ID = 7A VGS = 10V, RGS = 33 5 9 42 21 9.2 5.0 1.5 2.0 10 18 68 34 13 7 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ISD = 7A ISD = 2.1A IF = 7A, di/dt = 100A/s 0.9 0.8 1.25 1.0 33 20 V V ns nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of oz copper c) 135C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Starting TJ = 25C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300s, Duty Cycle <2%. 2 FDS8984 Rev. A1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ 30 = 25C unless otherwise noted 3.0 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED VGS=10V PULSE DURATION =80S DUTY CYCLE =0.5% MAX VGS=5.0V VGS=3.5V VGS=4.5V VGS=4.0V VGS=3.0V DRAIN-SOURCE ON-RESISTANCE 2.5 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 20 VGS=3.0V VGS=3.5V VGS=4.0V VGS=4.5V 2.0 10 1.5 1.0 VGS=5.0V 0.5 VGS=10V 25 30 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 10 15 20 Figure 1. On Region Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 2. On-Resistance vs Drain Current and Gate Voltage 60 55 50 45 40 35 30 25 20 15 2 TJ = 25oC TJ = 125oC ID = 7A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -80 ID = 7A VGS = 10V RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) 1.6 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On Resistance vs Temperature Figure 4. On-Resistance vs Gate to Source Votlage 30 IS, REVERSE DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 PULSE DURATION =80S DUTY CYCLE =0.5% MAX 10 VGS = 0V VDD = 5V TJ = 150 C O 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC TJ = 25 C TJ = - 55 C O O 0.01 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDS8984 Rev. A1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ VGS, GATE TO SOURCE VOLTAGE(V) = 25C unless otherwise noted 700 600 CISS 10 8 CAPACITANCE (pF) 6 4 2 0 VDD = 10V VDD = 15V 500 400 300 200 100 f = 1MHz VGS = 0V VDD = 20V COSS CRSS 1 10 30 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 0.1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 8 IAS, AVALANCHE CURRENT (A) 10 STARTING TJ = 25 C O ID, DRAIN CURRENT (A) 7 6 5 4 3 2 1 VGS=4.5V VGS=10V STARTING TJ = 125 C 1 0.01 0.1 1 10 20 O 0 25 50 75 100 125 o 150 tAV, TIME IN AVALANCHE (mS) TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 ID, DRAIN CURRENT (A) 10us Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 3000 1000 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 100us P(PK), PEAK TRANSIENT POWER (W) 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1ms 10ms 100ms 1s DC 100 VGS=10V I = I25 150 - T A ----------------------125 0.1 10 SINGLE PULSE 0.01 0.1 SINGLE PULSE TJ = MAX RATED TA = 25oC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 -5 10 10 -4 10 -3 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDS8984 Rev. A1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ 2 1 = 25C unless otherwise noted DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 Normalized Thermal Impedance ZJA 0.1 0.01 PDM t1 1E-3 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-4 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve 5 FDS8984 Rev. A1 www.fairchildsemi.com FDS8984 N-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the worldTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM tm TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I27 Preliminary No Identification Needed Full Production Obsolete Not In Production FDS8984 Rev. A1 6 www.fairchildsemi.com |
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