 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L16FE High Speed Switching Applications Analog Switch Applications * * Small package Low on-resistance Q1: Ron = 4 (max) (@VGS = 2.5 V) Q2: Ron = 12 (max) (@VGS = -2.5 V) Unit: mm Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 10 100 200 Unit V V mA Q2 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating -20 10 -100 -200 Unit V V mA 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC JEITA TOSHIBA 2-2N1D (Ta = 25C) Absolute Maximum Ratings (Q1, Q2 Common) Characteristics Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 150 150 -55~150 Unit mW C C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.135 mm x 6) 0.45 mm 0.3 mm 1 2007-11-01 SSM6L16FE Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 K6 1 2 3 1 Q1 Q2 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 SSM6L16FE Q1 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V Drain-Source on-resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDS = 3 V, VGS = 0, f = 1 MHz MIN. 20 0.6 40 TYP. 1.5 2.2 5.2 9.3 4.5 9.8 70 125 MAX. 1 1 1.1 3.0 4.0 15 pF pF pF nS UNIT A V A V mS Switching Time Test Circuit (a) Test circuit 2.5 V 0 10 s VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C IN 50 RL VDD OUT (b) VIN 2.5 V 90% 10% 0V (c) VOUT VDD 10% 90% tr ton toff tf VDS (ON) Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 3 2007-11-01 SSM6L16FE Q2 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 10 V, VDS = 0 ID = -0.1 mA, VGS = 0 VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -10 mA ID = -10 mA, VGS = -4 V Drain-Source on-resistance RDS (ON) ID = -10 mA, VGS = -2.5 V ID = -1 mA, VGS = -1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDD = -3 V, ID = - 10 mA, VGS = 0 ~ -2.5 V VDS = -3 V, VGS = 0, f = 1 MHz MIN. -20 -0.6 25 TYP. 6 8 18 11 3.7 10 130 190 MAX. 1 -1 -1.1 8 12 45 pF pF pF ns UNIT A V A V mS Switching Time Test Circuit (a) Test circuit 0 IN 50 RL VDD -2.5 V 90% OUT (b) VIN 0V 10% -2.5V 10 s (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = -3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C VDD Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth.(The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Please take this into consideration when using the device. 4 2007-11-01 SSM6L16FE Q1 (N-ch MOSFET) ID - VDS 250 2.5 200 43 10 2.3 2.1 1.9 150 Common source Ta = 25C 100 Ta = 100C 10 25C 1 1000 Common source VDS = 3 V ID - VGS (mA) Drain current ID Drain current ID (mA) 100 1.7 -25C 50 1.5 VGS = 1.3 V 0.1 0 0 0.5 1 1.5 2 0.01 0 1 2 3 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) - ID 12 Common source Ta = 25C 10 5 6 RDS (ON) - VGS Common source ID = 10 mA Drain-Source on-resistance RDS (ON) () 8 VGS = 1.5 V Drain-Source on-resistance RDS (ON) () 4 6 3 Ta = 100C 25C 1 -25C 4 2.5 V 2 4V 0 1 10 100 1000 2 0 0 2 4 6 8 10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) - Ta 8 Common source 2 Common source ID = 0.1 mA VDS = 3 V Vth - Ta Vth (V) Gate threshold voltage 125 150 4 V, 10 mA 100 Drain-Source on-resistance RDS (ON) () 1.6 6 VGS = 1.5 V, ID = 1 mA 1.2 4 2.5 V, 10 mA 2 0.8 0.4 0 -25 0 25 50 75 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta (C) Ambient temperature Ta (C) 5 2007-11-01 SSM6L16FE Q1 (N-ch MOSFET) Yfs - ID 500 300 Common source VDS = 3 V Ta = 25C 100 50 30 250 Common source VGS = 0 V Ta = 25C D IDR S 100 IDR - VDS Drain reverse current IDR (mA) Forward transfer admittance Yfs (mS) 200 150 G 10 5 3 50 1 1 10 100 1000 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Drain current ID (mA) Drain-Source voltage VDS (V) C - VDS 100 50 30 5000 3000 toff t - ID Common source VDD = 3 V VGS = 0~2.5 V Ta = 25C 10 Switching time t (ns) (pF) 1000 500 300 tf Capacitance C 5 3 Common source 1 VGS = 0 V f = 1 MHz 0.5 Ta = 25C 0.3 0.1 0.3 0.5 1 3 5 10 Ciss Coss Crss 100 ton 50 30 tr 30 50 100 Drain-Source voltage VDS (V) 10 0.1 1 10 100 Drain current ID (mA) 6 2007-11-01 SSM6L16FE Q2 (P-ch MOSFET) ID - VDS -250 Common Source -200 -10 -4 Ta = 25C -3 -150 -100 Ta = 100C -10 25C -1 -25C -1000 Common SOurce VDS = -3 V -2.7 -2.5 -2.3 -100 -2.1 -1.9 -50 -1.7 VGS = -1.5 V 0 0 -0.5 -1 -1.5 -2 -0.01 0 -1 -2 -3 -4 ID - VGS (mA) ID Drain current Drain current ID (mA) -0.1 Drain - Source voltage VDS (V) Gate - Source voltage VGS (V) RDS (ON) - ID RDS (ON) - VGS 20 1.8 Common Source ID = -1 mA Drain - Source on-resistance RDS (ON) () 25 Drain - Source on-resistance RDS (ON) () VGS = -1.5 V 1.6 1.4 1.2 10 8 6 .4 2 -25 0 -2 -4 -6 -10 Ta=100 20 15 -2.5 V 10 25 5 -4 V 0 -1 -10 -100 -1000 0 -8 Drain current ID (mA) Gate - Source voltage VGS (V) RDS (ON) - Ta 40 35 30 25 20 15 10 5 0 -25 -2.5 V, -10mA VGS =-1.5 V, ID=-1mA -2 Vth - Ta Vth (V) -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 125 150 Common Source ID = -0.1 mA VDS = -3 V Common Source Drain - Source on-resistance RDS (ON) () -4V, -10mA 0 25 50 75 100 125 150 Ambient temperature Ta (C) Gate threshold voltage Ambient temperature Ta (C) 7 2007-11-01 SSM6L16FE Q2 (P-ch MOSFET) Yfs - ID 1000 -250 IDR - VDS (mA) Common Source VDS =-3 V Ta = 25C Common Source VGS = 0 V Ta = 25C D IDR S -100 Yfs 500 300 -200 Forward transfer admittance ( S) 100 50 30 IDR 10 5 3 Drain reverse current -150 G -50 1 -1 -10 -100 -1000 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain current ID (mA) Drain - Source VDS (V) c - VDS 200 Common Source VGS = 0 V f = 1 MHz Ta = 25C 10000 5000 3000 t - ID Common Source VDD = -3 V VGS = 0~-2.5 V Ta = 25C (ns) (pF) toff 1000 100 t C Switching time 500 300 tf Capacitance 10 Ciss Coss 100 50 30 ton tr 1 -0.1 Crss -1 -10 -100 10 -0.1 -1 -10 -100 Drain - Source voltage VDS (V) Drain current ID (mA) Common Characteristics PD - Ta 250 (mW) Drain power dissipation PD 200 Mounted on FR4 board (25.4mmX25.4mmX1.6t CU Pad:0.6mm2X3 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 8 2007-11-01 SSM6L16FE RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-11-01 |
Price & Availability of SSM6L16FE
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |