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STB150NF55 STP150NF55 - STW150NF55 N-channel 55V - 0.005 - 120A - D2PAK/TO-220/TO-247 STripFETTM II Power MOSFET General features Type STB150NF55 STP150NF55 STW150NF55 VDSS 55V 55V 55V RDS(on) <0.006 <0.006 <0.006 ID 120A(1) 120A(1) 120A(1) TO-220 1 2 3 3 1 D2PAK 1. Current limited by package 100% avalanche tested Description TO-247 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications Switching application Order codes Sales type STB150NF55T4 STP150NF55 STW150NF55 Marking B150NF55 P150NF55 W150NF55 Package D 2PAK Packaging Tape & reel Tube Tube TO-220 TO-247 June 2006 Rev 3 1/19 www.st.com 19 Contents STB150NF55 - STP150NF55 - STW150NF55 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 6 7 Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 STB150NF55 - STP150NF55 - STW150NF55 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID(1) ID(1) IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Value 55 55 20 120 106 480 300 2 8 850 -55 to 175 Max. operating junction temperature Unit V V V A A A W W/C V/ns mJ C Ptot (3) (4) dv/dt EAS Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Tstg Tj 1. Value limited by wire bonding 2. Pulse width limited by safe operating area. 3. ISD 120A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj = 25 C, ID = 60A, VDD = 30V Table 2. Thermal data TO-220 D2PAK 0.5 62.5 -50 TO-247 C/W C/W C/W C Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb TJ Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose(1) see Figure 15 and Figure 16 300 1. for 10 sec. 1.6mm from case 3/19 Electrical characteristics STB150NF55 - STP150NF55 - STW150NF55 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 60A 2 0.005 Min. 55 1 10 100 4 0.006 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 4. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 60A Min. Typ. 160 4400 1050 350 35 180 140 80 140 35 70 190 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VDD = 27.5V, ID = 60A RG = 4.7 VGS = 10V (see Figure 19) VDD = 27.5V, ID = 120A, VGS = 10V (see Figure 20) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 4/19 STB150NF55 - STP150NF55 - STW150NF55 Electrical characteristics Table 5. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 120A, VGS = 0 130 350 7.5 Test conditions Min. Typ. Max. 120 480 1.5 Unit A A V ns nC A ISD = 120A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 25V, Tj = 150C Reverse recovery current (see Figure 21) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 5/19 Electrical characteristics STB150NF55 - STP150NF55 - STW150NF55 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/19 STB150NF55 - STP150NF55 - STW150NF55 Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 7/19 Electrical characteristics Figure 13. Power derating vs Tc STB150NF55 - STP150NF55 - STW150NF55 Figure 14. Max ID current vs Tc Figure 15. Thermal resistance Rthj-a vs PCB copper area Figure 16. Max power dissipation vs PCB copper area 8/19 STB150NF55 - STP150NF55 - STW150NF55 Figure 17. Allowable lav vs time in avalanche Electrical characteristics The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in avalanche (single pulse) tAV is the time in avalanche To derate above 25 C, at fixed IAV , the following equation must be applied: IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width equal to TAV . 9/19 Spice thermal model STB150NF55 - STP150NF55 - STW150NF55 3 Spice thermal model Table 6. Parameters Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 Node 5-4 4-3 3-2 2-1 Value 0.011 0.0012 0.05 0.1 RTHERM1 RTHERM2 RTHERM3 RTHERM4 5-4 4-3 3-2 2-1 0.09 0.02 0.11 0.17 Figure 18. Scheme 10/19 STB150NF55 - STP150NF55 - STW150NF55 Test circuit 4 Test circuit Figure 20. Gate charge test circuit Figure 19. Switching times test circuit for resistive load Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 11/19 Test circuit Figure 25. Diode recovery times waveform STB150NF55 - STP150NF55 - STW150NF55 12/19 STB150NF55 - STP150NF55 - STW150NF55 Package mechanical data 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 13/19 Package mechanical data STB150NF55 - STP150NF55 - STW150NF55 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 14/19 STB150NF55 - STP150NF55 - STW150NF55 Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 15/19 Package mechanical data STB150NF55 - STP150NF55 - STW150NF55 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 16/19 STB150NF55 - STP150NF55 - STW150NF55 Packaging mechanical data 6 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 17/19 Revision history STB150NF55 - STP150NF55 - STW150NF55 7 Revision history Table 7. Date 21-Jun-2004 26-Jun-2006 Revision history Revision 2 3 Preliminary version New template, no content change Changes 18/19 STB150NF55 - STP150NF55 - STW150NF55 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19 |
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