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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
May 2007
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Features
High sensitivity to low input drive current Meets or exceeds all JEDEC Registered
tm
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Specifications
UL, C-UL approved VDE 0884 approval available as a test option
- add option V (e.g., 4N29VM)
Applications
Low power logic circuits Telecommunications equipment Portable electronics Solid state relays Interfacing coupling systems of different potentials
and impedances
Packages
Schematic
6 1 6 1
CATHODE 2 5 COLLECTOR ANODE 1 6 BASE
6 1
N/C 3 4 EMITTER
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Absolute Maximum Ratings (TA = 25C Unless otherwise specified.)
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD DETECTOR BVCEO BVCBO BVECO PD IC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Detector Power Dissipation @ TA = 25C Derate above 25C Continuous Collector Current 30 30 5 150 2.0 150 V V V mW mW/C mA Continuous Forward Current Reverse Voltage Forward Current - Peak (300s, 2% Duty Cycle) LED Power Dissipation @ TA = 25C Derate above 25C 80 3 3.0 150 2.0 mA V A mW mW/C Storage Temperature Operating Temperature Lead Solder Temperature (Wave) Total Device Power Dissipation @ TA = 25C Derate above 25C -40 to +150 -40 to +100 260 for 10 sec 250 3.3 C C C mW mW/C
Parameter
Value
Units
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com 2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics (TA = 25C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER VF Input Forward Voltage* IF = 10mA 4NXXM H11B1M, TIL113M IR Reverse Leakage Current* VR = 3.0V VR = 6.0V C BVCEO Capacitance* VF = 0V, f = 1.0MHz 4NXXM H11B1M, TIL113M All 4NXXM, TIL113M H11B1M BVCBO BVECO Collector-Base Breakdown Voltage* IC = 100A, IE = 0 All 4NXXM H11B1M, TIL113M ICEO Collector-Emitter Dark Current* VCE = 10V, Base Open All Emitter-Collector Breakdown Voltage* IE = 100A, IB = 0 30 25 30 5.0 7 0.8 1.2 1.2 0.001 0.001 150 60 60 100 10 10 1 100 nA V V 1.5 1.5 100 10 pF V A V
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
DETECTOR Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0
Transfer Characteristics
Symbol
IC(CTR)
Parameter
Collector Output Current*(1, 2)
Test Conditions
IF = 10mA, VCE = 10V, IB = 0
Device
4N32M, 4N33M 4N29M, 4N30M
Min.
50 (500) 10 (100) 5 (500) 30 (300)
Typ.
Max.
Unit
mA (%)
DC CHARACTERISTICS
IF = 1mA, VCE = 5V IF = 10mA, VCE = 1V VCE(SAT) Saturation Voltage*(2) IF = 8mA, IC = 2.0mA IF = 1mA, IC = 1mA AC CHARACTERISTICS ton Turn-on Time IF = 200mA, IC = 50mA, VCC = 10V, RL = 100 IF = 10mA, VCE = 10V, RL = 100 toff Turn-off Time IF = 200mA, IC = 50mA, VCC = 10V, RL = 100
H11B1M TIL113M 4NXXM TIL113M H11B1M 4NXXM, TIL113M H11B1M 4N32M, 4N33M, TIL113M 4N29M, 4N30M
1.0 1.25 1.0 5.0 25 100
V
S
S
40 18 30 kHz
IF = 10mA, VCE = 10V, RL = 100 BW Bandwidth(3, 4)
H11B1M
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com 3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics (TA = 25C Unless otherwise specified.) (Continued)
Isolation Characteristics
Symbol
VISO
Characteristic
Test Conditions
Device
All 4N32M* 4N33M* All All
Min.
7500 2500 1500 1011
Typ.
Max.
Units
Vac(peak) V
Input-Output Isolation Voltage(5) II-O 1A, Vrms, t = 1sec. VDC VDC Isolation Resistance(5) Isolation Capacitance
(5)
RISO CISO
VI-O = 500VDC VI-O = O, f = 1MHz
0.8
pF
Notes: * Indicates JEDEC registered data. 1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current. 2. Pulse test: pulse width = 300s, duty cycle 2.0% . 3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms. 4. The frequency at which IC is 3dB down from the 1kHz value. 5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com 4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves
Fig. 1 LED Forward Voltage vs. Forward Current
1.8 1.6 VCE = 5.0V TA = 25C Normalized to IF = 10 mA
Fig. 2 Normalized CTR vs. Forward Current
1.7
1.4
VF - FORWARD VOLTAGE (V)
1.6
1.2
1.5
NORMALIZED CTR
1.0
1.4
TA = -55C
0.8
1.3 TA = 25C 1.2 TA = 100C 1.1
0.6
0.4
0.2
1.0 1 10 100
0.0 0 2 4 6 8 10 12 14 16 18 20
IF - LED FORWARD CURRENT (mA)
IF - FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4 1.0
Fig. 4 CTR vs. RBE (Unsaturated)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0
IF = 20 mA
1.2 IF = 5 mA
NORMALIZED CTR
1.0 IF = 10 mA 0.8
0.6
IF = 20 mA
0.4
Normalized to IF = 10 mA TA = 25C
0.2 -60 -40 -20 0 20 40 60 80 100 10 100 1000
TA - AMBIENT TEMPERATURE (C)
RBE- BASE RESISTANCE (k)
Fig. 5 CTR vs. RBE (Saturated)
1.0 100
Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
0.9
VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE= 0.3 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 1000 IF = 5 mA IF = 10 mA IF = 20 mA
TA = 25C
10
1
IF = 2.5 mA
0.1
0.01
IF = 5 mA IF = 10 mA
IF = 20 mA
0.001 0.01
0.1
1
10
RBE- BASE RESISTANCE (k )
IC - COLLECTOR CURRENT (mA)
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Typical Performance Curves (Continued)
Fig. 7 Switching Speed vs. Load Resistor
1000 IF = 10 mA VCC = 10 V TA = 25C 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 10 100 10 100 1000 10000 100000 VCC = 10 V IC = 2 mA RL = 100
Fig. 8 Normalized ton vs. RBE
SWITCHING SPEED - (s)
100
10
Toff
Tf
Ton
1
Tr
0.1 0.1
NORMALIZED ton - (ton(RBE) / ton(open))
R-LOAD RESISTOR (k)
RBE- BASE RESISTANCE (k )
Fig. 9 Normalized toff vs. RBE
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.4 1.3 10000
Fig. 10 Dark Current vs. Ambient Temperature
VCE = 10 V TA = 25C
NORMALIZED toff - (toff(RBE) / toff(open))
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100000 VCC = 10 V IC = 2 mA RL = 100
1000
100
10
1
0.1
0.01
0.001 0 20 40 60 80 100
RBE- BASE RESISTANCE (k )
TA - AMBIENT TEMPERATURE (C)
TEST CIRCUIT
VCC = 10V
WAVE FORMS
INPUT PULSE
IF INPUT RBE
IC
RL
10% 90% tr ton Adjust IF to produce IC = 2 mA tf toff OUTPUT PULSE
OUTPUT
Figure 11. Switching Time Test Circuit and Waveforms
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com 6
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Package Dimensions
Through Hole
0.350 (8.89) 0.320 (8.13) Pin 1 ID
Surface Mount
0.350 (8.89) 0.320 (8.13) PIN 1 ID
0.260 (6.60) 0.240 (6.10)
0.260 (6.60) 0.240 (6.10)
0.390 (9.90) 0.332 (8.43)
SEATING PLANE
SEATING PLANE
0.070 (1.77) 0.040 (1.02)
0.070 (1.77) 0.040 (1.02)
0.014 (0.36) 0.010 (0.25) 0.320 (8.13)
0.320 (8.13) 0.014 (0.36) 0.010 (0.25)
0.200 (5.08) 0.115 (2.93)
0.200 (5.08) 0.115 (2.93)
0.012 (0.30) 0.008 (0.20)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30)
0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41)
0.100 [2.54] 0.035 (0.88) 0.006 (0.16)
0.4" Lead Spacing
0.350 (8.89) 0.320 (8.13) PIN 1 ID
Recommended Pay Layout for Surface Mount Leadform
0.070 (1.78)
0.260 (6.60) 0.240 (6.10)
0.060 (1.52)
0.070 (1.77) 0.040 (1.02) SEATING PLANE
0.014 (0.36) 0.010 (0.25)
0.415 (10.54)
0.100 (2.54) 0.295 (7.49)
0.200 (5.08) 0.115 (2.93)
0.030 (0.76)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16)
Note: All dimensions are in inches (millimeters).
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com 7
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Ordering Information
Suffix
No Suffix S SR2 T V TV SV SR2V
Example
4N32M 4N32SM 4N32SR2M 4N32TM 4N32VM 4N32TVM 4N32SVM 4N32SR2VM Surface Mount Lead Bend
Option
Standard Through Hole Device Surface Mount; Tape and reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel
Marking Information
1
4N29 V
3 4
2 6
X YY Q
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code, e.g., `7' Two digit work week ranging from `01' to `53' Assembly package code
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com 8
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
Tape Dimensions
12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10
11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3
0.1 MAX
10.1 0.20
O1.5 0.1/-0
User Direction of Feed
Note: All dimensions are in millimeters.
Reflow Soldering Profile
300 280 260 240 220 200 180 160 C 140 120 100 80 60 40 20 0 0 260C >245C = 42 Sec
Time above 183C = 90 Sec 1.822C/Sec Ramp up rate
33 Sec 60 120 180 270 360
Time (s)
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
www.fairchildsemi.com 9
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design
First Production
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I27
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0
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