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DG441L/442L
Vishay Siliconix
Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches
FEATURES
D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance--r DS(on): 17 W D Fast Switching--tON: 20 ns --tOFF: 12 ns D TTL, CMOS Compatible D Low Leakage: 0.25 nA D 2000-V ESD Protection
BENEFITS
D D D D Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing
APPLICATIONS
D D D D D D D Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals SDSL, DSLAM Audio and Video Signal Routing
DESCRIPTION
The DG441L/442L are low voltage pin-for-pin compatible companion devices to the industry standard DG441L/442L with improved performance Combining high speed (tON: 20 ns), flat rDS(on) over the analog signal range (5 W), minimal insertion lose (- 3 dB at 280 MHz), and excellent crosstalk and off-isolation performance ( - 50 dB at 50 MHz), the DG441L/442L are ideally suited for audio and video signal switching. The DG441L/442L responds to opposite control logic as shown in the Truth Table. open and two normally closed switches.
Using BiCMOS wafer fabrication technology allows the DG441L/442L to operate on single and dual supplies. Single supply voltage ranges from 3 to 12 V while dual supply operation is recommended with "3 to "6 V.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line, TSSOP and SOIC
TRUTH TABLE
IN2 D2 S2 V+ NC 16-Pin 16 Pin TSSOP S3 D3 16-Pin 16 Pin CerDIP IN3 -40 to 85_C 40 16-Pin 16 Pin Narrow SOIC
IN1 D1 S1 VGND S4 D4 IN4
1 2 3 4 5 6 7 8
16 15 14 13
Logic
0 1
DG441L
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG442L
OFF ON
ORDERING INFORMATION
Temp Range Package Part Number
DG441LDQ DG442LDQ DG441LDY DG442LDY DG441LAK, DG441LAK/883 DG442LAK, DG442LAK/883 DG441LAZ/883 LCC-20 LCC 20 DG442LAZ/883 -55 to 125_C 55
DG441L/442L
Top View
12 11 10 9
Document Number: 71399 S-03294--Rev. D, 17-Mar-03
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1
DG441L/442L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 13 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3 to (V+ + 0.3 V) or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature: (DQ, DY Suffix) . . . . . . . . . . . . . . . . . . -65 to 125_C (AK Suffix) . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C
Power Dissipation (Package)b 16-Pin TSSOPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 7 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C
SPECIFICATIONSa (SINGLE SUPPLY 12 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance On-Resistance Match Between Channelse Switch Off Leakage Current Channel On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) VD = 1/11 V VS = 11/1 V V, ID(off) ID(on) VS = VD = 11/1 V V+ = 10.8 V, V - = 0 V IS = 10 mA, VD = 2/9 V IS = 10 mA, VD = 9 V Full Room Full Room Room Full Room Full Room Full 20 0 12 30 45 0.5 -1 -15 -1 -15 -1 -15 1 15 1 15 1 15 -1 -10 -1 -10 -1 -10 0 12 30 40 0.5 1 10 1 10 1 10 nA V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 12 V, V - = 0 V VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
W
0.1
Digital Control
Input Current, VIN Low Input Current, VIN High IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full 0.01 -1.5 -1.5 1.5 1.5 -1 -1 1 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 5 V See Figure 2 Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room 20 12 5 71 95 5 6 15 p pF dB 60 80 35 50 60 70 35 45 ns
pC
Power Supplies
Positive Supply Current Negative Supply Current Ground Current I+ IIGND VIN = 0 or 12 V Full Room Full Full 0.03 -0.002 -0.002 -1 -7.5 -1.5 1.5 -1 -5 -1 Document Number: 71399 S-03294--Rev. D, 17-Mar-03 1 mA
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DG441L/442L
Vishay Siliconix
SPECIFICATIONSa (DUAL SUPPLY "5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance On-Resistance Match BetweenChannelse Switch Off Leakage Currentg Channel On Leakage Currentg VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) V+ = 5 V, V - = -5 V IS = 10 mA, VD = "3.5 V IS = 10 mA, VD = "3.5 V Full Room Full Room Room Full Room Full Room Full 20 0.1 -1 -15 -1 -15 -1 -15 -5 5 33 45 0.5 1 15 1 15 1 15 -1 -10 -1 -10 -1 -10 -5 5 33 40 0.5 1 10 1 10 1 10 nA V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 5 V, V - = -5 V VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
W
V+ = 5.5 V, V - = -5.5 V VD = "4.5 V, VS = #4.5 V V+ = 5.5 V, V - = -5.5 V VS = VD = "4.5 V
Digital Control
Input Current, VIN Lowe Input Current, VIN Highe IIL IIH VIN Under Test = 0.8 V VIN Under Test = 2.4 V Full Full 0.05 0.05 -1.5 -1.5 1.5 1.5 -1 -1 1 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = "3.5 V See Figure 2 Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room 21 16 5 68 85 9 9 20 p pF dB 60 83 35 55 60 70 35 45 ns
pC
Power Supplies
Positive Supply Currente Negative Supply Currente Ground Currente I+ IIGND VIN = 0 or 5 V Full Room Full Full 0.002 -0.002 -0.002 -1 -7.5 -1.5 1.5 -1 -5 -1 1 mA
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistancee On-Resistance Match Between Channelse VANALOG rDS(on) DrDS(on) V+ = 4.5 V, IS = 5 mA VD = 1 V, 3.5 V IS = 5 mA, VD = 3.5 V Full Room Full Room 35 0.5 0 5 50 88 1.0 0 5 50 75 1.0 V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 5 V, V - = 0 V VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
W
Dynamic Characteristics
Turn-On Timee Turn-Off Timee tON tOFF RL = 300 W , CL = 35 pF VS = 3.5 V, See Figure 2 Room Hot Room Hot 27 15 50 90 30 55 50 60 30 40 ns
Document Number: 71399 S-03294--Rev. D, 17-Mar-03
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DG441L/442L
Vishay Siliconix
SPECIFICATIONSa (SINGLE SUPPLY 5 V)
Test Conditions Unless Specified Parameter
Charge Injectione
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
Q
V+ = 5 V, V - = 0 V VIN = 2.4 V, 0.8 Vf
Tempb
Room
Typc
0.5
Mind
Maxd
Mind
Maxd
Unit
pC
Dynamic Characteristics
Vg = 0 V, Rg = 0 W , CL = 10 nF
Power Supplies
Positive Supply Currente Negative Supply Ground Currente Currente I+ IIGND VIN = 0 or 5 V Full Room Full Full 10 -0.002 -10 -1 -7.5 -200 200 -1 -5 -100 100 mA
SPECIFICATIONSa (SINGLE SUPPLY 3 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance On-Resistance Match Between Channelse Switch Off Leakage Currentg Channel On Leakage Currentg VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) V+ = 2.7 V, V - = 0 V IS = 5 mA, VD = 0.5, 2.2 V IS = 5 mA, VD = 2.2 V Full Room Full Room Room Full Room Full Room Full 65 0 3 80 115 3.0 -1 -15 -1 -15 -1 -15 1 15 1 15 1 15 -1 -10 -1 -10 -1 -10 0 3 80 100 3.0 1 10 1 10 1 10 nA V
A Suffix Limits
-55 to 125_C
D Suffix Limits
-40 to 85_C
Symbol
V+ = 3 V, V - = 0 V VIN = 0.4 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
W
1.0
V+ = 3.3 V, V - = 0 V VD = 1, 2 V, VS = 2, 1 V V+ = 3.3 V, V - = 0 V VS = VD = 1, 2 V
Digital Control
Input Current, VIN Lowe Input Current, VIN Highe IIL IIH VIN Under Test = 0.4 V VIN Under Test = 2.4 V Full Full 0.005 0.005 -1.5 -1.5 1.5 1.5 -1 -1 1 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 W , CL = 35 pF VS = 1.5 V See Figure 2 Vg = 0 V, Rg = 0 W , CL = 10 nF RL = 50 W , CL = 5 pF pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room 50 30 1 68 85 6 6 20 p pF dB 136 175 100 140 136 151 100 125 ns
pC
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. Leakage parameters are guaranteed by worst case test conditions and not subject to test. www.vishay.com Document Number: 71399 S-03294--Rev. D, 17-Mar-03
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DG441L/442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. Drain Voltage (Single Supply)
100 50 V+ = 5 V V- = 0 V r DS(on) - On-Resistance ( W ) 80 VCC = 2.7 V 60 r DS(on) - On-Resistance ( W ) 40 A B 30 C D 20 A=125_C B= 85_C C= 25_C D= -40_C E= -55_C E
rDS(on) vs. Drain Voltage and Temperature (Single Supply)
40
VCC = 4.5 V
20
VCC = 12 V
10
0 0 3 6 Drain Voltage (V) 9 12
0 0 1 2 3 4 5 Drain Voltage (V)
rDS(on) vs. Drain Voltage and Temperature (Dual Supply)
35 V" = "5 V r DS(on) - On-Resistance ( W ) 28 A 21 B C 14 A=125_C B= 85_C C= 25_C D= -40_C E= -55_C -5 -3 -1 1 3 5 D E I S , I D Leakage Current (pA) 20 30
Leakage Current vs. Analog Voltage (Dual Supply)
V+ = 5 V V - = -5 V
10 ID(on) 0 IS(off) ID(off)
-10
7
-20
0 Drain Voltage (V)
-30 -5 -3 -1 1 3 5
VD or VS - Drain-Source Voltage
Switching Time vs. Single Supply
50 45
Switching Time vs. Dual Supply
40 Switching Speed (nS) Switching Speed (nS) tON 30
36
27
tOFF
tON
20 tOFF 10
18
9
0 0 3 6 9 12 15
0 2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V" Positive Supply Voltage (V)
V" Positive Supply Voltage (V)
Document Number: 71399 S-03294--Rev. D, 17-Mar-03
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DG441L/442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Drain Voltage
6
4 Charge Injection (Q) VSUPPLY = "5 V 2 VSUPPLY = 3 V 0
-2 -5 -3 -1 1 3 5 Drain Voltage (V)
Input Threshold vs. Single Supply Voltage
1.8 7 6 5 4 3 2 0.3 1 0 0 2 4 6 8 10 12 14 0
Drain Capacitance vs. Drain Voltage (Single Supply)
1.5 V TH - Threshold (V) Capacitance (pF)
CD(off) @ VCC = 5 V CD(off) @ VCC = 12 V CD(off) @ VCC = 3 V
1.2
0.9
0.6
0.0 V" Positive Supply Voltage (V)
3
6 VD - Drain Voltage (V)
9
12
Capacitance vs. Analog Signal (Dual Supply)
25 VSUPPLY = "5 V 20 Capacitance (pF) CD(on) 10 -10
Insertion Loss, Off Isolation and Crosstalk vs. Frequency (Single Supply)
-30 15 Loss (dB)
V+ = 3 V V- = 0 V RL = 50 W
Insertion Loss -3 dB = 280 MHz
-50
Off Isolation
10 -70 CS/CD(off) 5 -90 0 -5 -3 -1 1 3 5 Crosstalk
-110 0.1 1 10 Frequency (MHz) Document Number: 71399 S-03294--Rev. D, 17-Mar-03 100 1000 Analog Voltage (V)
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DG441L/442L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5-V Reg
S
INX
Level Shift/ Drive
V-
V+
GND D
V-
FIGURE 1.
TEST CIRCUITS
V+
Logic Input D RL 1 kW VSwitch Output Note:
3V 50% 0V 50% tr <20 ns tf <20 ns tOFF VS VO 80% 80%
V+ VS 3V GND S IN VO CL 35 pF Switch Input
0V tON Logic input waveform is inverted for DG442.
VCL (includes fixture and stray capacitance)
FIGURE 2. Switching Time
V+
DV
O
Rg
V+ S IN D CL 1 nF VVO
VO INX OFF ON OFF
(DG441)
OFF ON Q = DVO x CL OFF
3V GND
INX V-
(DG442) FIGURE 3. Charge Injection
Document Number: 71399 S-03294--Rev. D, 17-Mar-03
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DG441L/442L
Vishay Siliconix
TEST CIRCUITS
V+ C V+ VS Rg = 50 W 0V, 2.4 V NC 0V, 2.4 V S2 IN2 GND VC D2 S1 IN1 D1
C = 1 mF tantalum in parallel with 0.01 mF ceramic V+ C
V+
50 W VO RL
VS Rg = 50 W 0V, 2.4 V
S
D
VO
IN GND VC
RL
VVXTALK Isolation = 20 log C = RF bypass VS VO Off Isolation = 20 log VS VO
FIGURE 4. Crosstalk
FIGURE 5. Off Isolation
V+ C V+ S Meter IN 0 V, 2.4 V D GND VC HP4192A Impedance Analyzer or Equivalent
V-
FIGURE 6. Source/Drain Capacitances
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Document Number: 71399 S-03294--Rev. D, 17-Mar-03
DG441L/442L
Vishay Siliconix
APPLICATIONS
+24 V
+12 V
RL
DG442L
+12 V IN
V+ 150 W
I = 3A VN0300L, M +12 V VIN 10 kW + +12 V S
1/4 DG442L
D CH + VOUT
GND
VIN
0 = Load Off 1 = Load On
0V
H = Sample L = Hold
FIGURE 7. Power MOSFET Driver
FIGURE 8. Open Loop Sample-and-Hold
VIN
+ +12 V V+
VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit.
GAIN1 AV = 1
R1 90 kW With SW4 Closed VOUT VIN = R1 + R2 + R3 + R4 R4 = 100
GAIN2 AV = 10
R2 5 kW
GAIN3 AV = 20 GAIN4 AV = 100
R3 4 kW
R4 1 kW
DG441L or DG442L
VGND
)V
FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Document Number: 71399 S-03294--Rev. D, 17-Mar-03
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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