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| FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7 Features * RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A * Low gate charge ( Typ. 21nC) * Low Crss ( Typ. 11pF) * Fast switching * 100% avalanche tested * Improve dv/dt capability * RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 165 1.33 -55 to +150 300 11.5 6.9 46 456 11.5 16.5 4.5 42 0.33 FDP12N50F FDPF12N50FT 500 30 11.5* 6.9* 46* Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP12N50F FDPF12N50FT 0.75 0.5 62.5 3.0 62.5 o Units C/W (c)2007 Fairchild Semiconductor Corporation FDP12N50F / FDPF12N50FT Rev. A1 1 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP12N50F FDPF12N50FT Device FDP12N50F FDPF12N50FT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V 25oC 500 0.5 10 100 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 6A VDS = 40V, ID = 6A (Note 4) 3.0 - 0.59 12 5.0 0.7 - V S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 11.5A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 1050 135 11 21 6 9 1395 180 17 30 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 11.5A RG = 25 (Note 4, 5) - 21 45 50 35 50 100 110 80 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 11.5A VGS = 0V, ISD = 11.5A dIF/dt = 100A/s (Note 4) - 134 0.37 11.5 46 1.5 - A A V ns C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 11.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP12N50F / FDPF12N50FT Rev. A1 2 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 30 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 30 10 ID,Drain Current[A] 1 ID,Drain Current[A] 10 150 C o 25 C o 0.1 0.05 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o * Notes : 1. VDS = 20V 2. 250s Pulse Test 1 VDS,Drain-Source Voltage[V] 10 20 1 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(on) [], Drain-Source On-Resistance 0.8 IS, Reverse Drain Current [A] 150 C o 0.7 VGS = 10V VGS = 20V 10 25 C o 0.6 0.5 0 * Note : TJ = 25 C o Notes: 1. VGS = 0V 6 12 ID, Drain Current [A] 18 1 0.0 2. 250s Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 5. Capacitance Characteristics 2000 VGS, Gate-Source Voltage [V] Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 250V VDS = 400V 8 1500 Capacitances [pF] Ciss * Note: 1. VGS = 0V 2. f = 1MHz 6 1000 4 500 Crss 2 * Note : ID = 11.5A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] 30 0 4 8 12 16 Qg, Total Gate Charge [nC] 20 24 FDP12N50F / FDPF12N50FT Rev. A1 3 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 8. Maximum Safe Operating Area - FDP12N50F 100 20s ID, Drain Current [A] 1.1 100s 10 DC 1ms 10ms 1.0 1 Operation in This Area is Limited by R DS(on) 0.9 * Notes : 1. VGS = 0V 2. ID = 250A 0.1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Safe Operating Area - FDPF12N50FT 100 20s Figure 10. Maximum Drain Current vs. Case Temperature 14 12 ID, Drain Current [A] 10 8 6 4 2 0 25 ID, Drain Current [A] 100s 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC 0.1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP12N50F 3 Thermal Response [ZJC] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse PDM t1 t2 0.01 * Notes : 1. ZJC(t) = 0.75 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) -4 o 1E-3 -5 10 10 10 -3 10 10 10 10 Rectangular Pulse Duration [sec] -2 -1 0 1 10 2 10 3 FDP12N50F / FDPF12N50FT Rev. A1 4 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF12N50FT 5 Thermal Response [ZJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 Single pulse * Notes : 1. ZJC(t) = 3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) o 0.01 -4 10 10 -3 10 10 10 10 Rectangular Pulse Duration [sec] -2 -1 0 1 10 2 10 3 FDP12N50F / FDPF12N50FT Rev. A1 5 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP12N50F / FDPF12N50FT Rev. A1 6 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP12N50F / FDPF12N50FT Rev. A1 7 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Mechanical Dimensions TO-220 FDP12N50F / FDPF12N50FT Rev. A1 8 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) 9.75 0.30 MAX1.47 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters 15.87 0.20 www.fairchildsemi.com FDP12N50F / FDPF12N50FT Rev. A1 9 FDP12N50F / FDPF12N50FT N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 FDP12N50F / FDPF12N50FT Rev. A1 www.fairchildsemi.com |
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