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| SI1300BDL New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES ID (A)a 0.4 0.35 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.85 at VGS = 4.5 V 1.08 at VGS = 2.5 V Qg (Typ) 335 D TrenchFETr Power MOSFET D 100 % Rg Tested RoHS COMPLIANT SC-70 (3-LEADS) D G 1 Marking Code KE XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: SI1300BDL-T1-E3 S N-Channel MOSFET 3 D G S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 _C Continuous Drain Current (TJ = 150 _C) TC = 70 _C TA = 25 _C TA = 70 _C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain TC = 25 _C TA = 25 _C TC = 25 _C Maximum Power Dissipation TC = 70 _C TA = 25 _C TA = 70 _C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 20 "8 0.4 0.32 0.37b, c 0.30b, c 0.5 0.18 0.14b, c 0.2 0.14 0.19 0.12b, c -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 _C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 sec d. Maximum under steady state conditions is 360 _C/W. Document Number: 73557 S-52388--Rev. A, 21-Nov-05 www.vishay.com t p 5 sec Steady State Symbol RthJA RthJF Typical 540 450 Maximum 670 570 Unit _C/W 1 SI1300BDL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 _C VDS w 5 V, VGS = 4.5 V VDS w 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 0.25 VGS =2.5 V, ID = 0.15 0.4 A 0.12 0.65 0.85 0.85 1.08 W 0.4 20 20 -2.8 1.0 "100 100 5 mV/_C V nA nA mA V Symbol Test Condition Min Typ Max Unit On-State On State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 10 V, RL = 25 W ID ^ 0.4 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 0.4 VDS = 10 V, VGS = 0 V, f = 1 MHz 35 13 4 560 335 VDS = 10 V, VGS = 2.5 V, ID= 0.35 98 85 7 7 10 8 7 12 12 15 13 12 ns W 840 503 pC p pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Currenta IS ISM VSD IS = 0.05 A 0.7 TC = 25 _C 0.18 0.4 1.2 A V www.vishay.com 2 Document Number: 73557 S-52388--Rev. A, 21-Nov-05 SI1300BDL New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics 1.25 VGS = 10 V thru 2.5 V 1.00 I D - Drain Current (A) VGS = 2.0 V 0.6 0.75 I D - Drain Current (A) 0.8 Vishay Siliconix Transfer Characteristics curves vs. Temp 0.4 0.50 VGS = 1.5 V 0.25 VGS = 1.0 V 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.2 TA = 25 _C TA = 125 _C TA = -55 _C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.0 50 Capacitance r DS(on) - On-Resistance ( W ) 40 C - Capacitance (pF) 1.5 Ciss 30 1.0 VGS = 2.5 V 20 Coss 10 Crss 0.5 VGS = 4.5 V 0.0 0.00 0 0.25 0.50 0.75 1.00 1.25 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-Source Voltage (V) 5 ID = 0.4 A V GS - Gate-to-Source Voltage (V) 4 Qg-Gate Charge On-Resistance vs. Junction Temperature 1.6 ID = 0.25 A 1.4 3 VDS = 10 V rDS(on) - On-Resistance (Normalized) 600 1.2 2 VDS = 16 V 1.0 1 0.8 0 0 150 300 450 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 73557 S-52388--Rev. A, 21-Nov-05 www.vishay.com 3 SI1300BDL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Forward Diode Voltage vs. Temp 10.0 5.0 rDS(on) vs VGS vs Temperature I S - Source Current (A) 1.0 TJ = 150 _C 0.1 TJ = 25 _C r DS(on) - On-Resistance ( W ) 4.0 3.0 2.0 TA = 125 _C 1.0 TA = 25 _C 0.01 0.001 0.0 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 1.0 0.9 8 0.8 V GS(th) Variance (V) Power (W) 0.7 0.6 0.5 0.4 2 0.3 0.2 -50 0 0.001 ID = 250 mA 6 10 Single Pulse Power, Junction-to-Ambient TA = 25 _C 4 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area 10 I D - Drain Current (A) 1 *Limited by rDS(on) 10 ms, 100 ms 0.1 1 ms 10 ms 100 m 1 s, 10 s, 100 s BVDSS Limited 0.01 TA = 25 _C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73557 S-52388--Rev. A, 21-Nov-05 SI1300BDL New Product TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 1 0.2 0.1 0.1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.05 2. Per Unit Base = RthJA = 360 _C/W 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 1000 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 *The power dissipation PD is based on TJ(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73557. Document Number: 73557 S-52388--Rev. A, 21-Nov-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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