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| SUM90N06-4M4P Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) () 0.0044 at VGS = 10 V ID (A) 90d Qg (Typ) 105 FEATURES * TrenchFET(R) Power MOSFETS * 175 C Junction Temperature * 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS * Power Supply - Secondary Synchronous Rectification * Industrial * OR-ing TO-263 D G G DS Top View S Ordering Information: SUM90N06-4M4P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Avalanche Energy a Symbol VDS VGS TC = 25 C TC = 70 C ID IDM IAS L = 0.1 mH TC = 25 C TA = 25 Cc EAS PD TJ, Tstg Limit 60 20 90d 90d 240 70 245 300 b Unit V A mJ W C Maximum Power Dissipationa Operating Junction and Storage Temperature Range 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74642 S-71691-Rev. A, 13-Aug-07 www.vishay.com 1 c Symbol RthJA RthJC Limit 40 0.5 Unit C/W SUM90N06-4M4P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge c c Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr IRM(REC) Qrr Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125 C VDS = 60 V, VGS = 0 V, TJ = 150 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 C VDS = 15 V, ID = 20 A Min 60 2.5 Typ Max Unit 4.5 250 1 50 250 V nA A A 70 0.0036 0.0059 60 6190 0.0044 0.0077 S VGS = 0 V, VDS = 30 V, f = 1 MHz 990 340 105 160 pF VDS = 30 V, VGS = 10 V, ID = 85 A f = 1 MHz VDD = 30 V, RL = 0.4 ID 85 A, VGEN = 10 V, Rg = 1 29 28 1.4 23 15 36 8 2.8 35 25 55 15 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25 C)b 85 240 IF = 30 A, VGS = 0 V IF = 75 A, di/dt = 100 A/s 0.84 61 3.0 91 1.5 100 4.5 140 A V ns A C Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74642 S-71691-Rev. A, 13-Aug-07 SUM90N06-4M4P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 120 VGS = 10 thru 7 V 120 g fs - Transconductance (S) 150 TC = - 55 C 100 I D - Drain Current (A) 80 90 TC = 25 C 60 6V 40 60 TC = 125 C 20 30 0 0 1 2 3 4 5 0 0 12 24 36 48 60 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) Output Characteristics 100 0.05 Transconductance ID = 20 A r DS(on) - On-Resistance () 80 I D - Drain Current (A) 0.04 60 0.03 40 TC = 125 C TC = 25 C 0.02 20 0.01 TA = 150 C TC = - 55 C 0 0 2 4 6 8 10 0 4 5 6 TA = 25 C 8 9 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics 0.0042 9000 On-resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance () 0.0040 C - Capacitance (pF) 7200 Ciss 5400 0.0038 VGS = 10 V 0.0036 3600 Coss 0.0034 1800 0.0032 0 20 40 60 80 100 0 0 Crss 12 24 36 48 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 74642 S-71691-Rev. A, 13-Aug-07 Capacitance www.vishay.com 3 SUM90N06-4M4P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.0 ID = 20 A 1.7 r DS(on) - On-Resistance V GS(th) Variance (V) VGS = 10 V (Normalized) 1.4 0.2 0.8 - 0.4 ID = 5 mA - 1.0 1.1 0.8 - 1.6 ID = 250 A 0.5 - 50 - 25 0 25 50 75 100 125 150 175 - 2.2 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) TJ - Temperature (C) On-Resistance vs. Junction Temperature 10 ID = 85 A VGS - Gate-to-Source Voltage (V) 8 VDS = 30 V VDS = 20 V 6 VDS = 40 V V(BR)VDSS (normalized) 70 68 66 64 62 60 0 0 22 44 66 88 110 58 - 50 74 72 ID = 1 mA Threshold Voltage 4 2 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 100 185 On-Resistance vs. Junction Temperature 10 I S - Source Current (A) TJ = 150 C TJ = 25 C I D - Drain Current (A) 148 1 111 Package Limited 74 0.1 0.01 37 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Source-Drain Diode Forward Voltage Maximum Drain Current vs. Case Temperature www.vishay.com 4 Document Number: 74642 S-71691-Rev. A, 13-Aug-07 SUM90N06-4M4P Vishay Siliconix TYPICAL CHARACTERISTICS 100 25 C, unless otherwise noted 1000 *Limited by r DS(on) 100 TJ = 25 C I D - Drain Current (A) I DAV (A) TJ = 150 C 10 10 1 ms 10 ms 100 ms DC 1 TC = 25 C Single Pulse 1 10-5 0.1 0.1 *VGS 10-4 10-3 10-2 10-1 1 t AV (sec) Single Pulse Avalanche Current Capability vs. Time 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74642. Document Number: 74642 S-71691-Rev. A, 13-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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