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| SUM90P10-19L Vishay Siliconix P-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 100 rDS(on) () 0.019 at VGS = - 10 V 0.021 at VGS = - 4.5 V ID (A) - 90 - 85 97 nC Qg (Typ) FEATURES * TrenchFET(R) Power MOSFET RoHS COMPLIANT S TO-263 G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) TC = 25 C TC = 125 C TA = 25 C TA = 125 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 125 C TA = 25 C TA = 125 C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit - 100 20 - 90 - 52 - 17.2b, c - 9.9b, c - 90 - 250 - 9b, c - 70 245 375 125 13.6b, c 4.5b, c - 50 to 175 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 40 C/W. t 10 sec Steady State Symbol RthJA RthJC Typical 8 0.33 Maximum 11 0.4 Unit C/W Document Number: 73474 S-71207-Rev. D, 18-Jun-07 www.vishay.com 1 SUM90P10-19L Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS , ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 100 V, VGS = 0 V VDS = - 100 V, VGS = 0 V, TJ = 175 C VDS 10 V, VGS = - 10 V VGS = - 10 V, ID = - 20 A VGS = - 4.5 V, ID = - 15 A VDS = - 15 V, ID = - 20 A Min - 100 Typ Max Unit V - 125 5.9 -1 -3 100 -1 - 500 - 90 0.0156 0.0173 80 0.019 0.021 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 11100 VDS = - 50 V, VGS = 0 V, f = 1 MHz VDS = - 50 V, VGS = - 10 V, ID = - 90 A VDS = - 50 V, VGS = - 4.5 V, ID = - 90 A f = 1 MHz VDD = - 50 V, RL = 0.56 ID - 90 A, VGEN = - 10 V, RG = 1 700 1690 217 97 42 51 3.5 20 510 145 870 30 855 220 1300 ns 326 146 nC pF Drain-Source Body Diode Characteristics IS ISM VSD trr Qrr ta tb IF = - 20 A, di/dt = 100 A/s, TJ = 25 C IS = - 20 A - 0.8 80 220 56 24 ns TC = 25 C - 90 - 250 - 1.5 120 330 V ns nC A Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73474 S-71207-Rev. D, 18-Jun-07 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 180 40 150 ID - Drain-Current (A) VGS = 10 thru 4V ID - Drain Current (A) 30 120 90 20 25 C 10 TC = 125 C 0 0.0 - 55 C 60 30 3V 0 0 1 2 3 4 1.0 2.0 3.0 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.030 VGS = 4.5 V RDS(on) - On-Resistance () 12000 0.020 C - Capacitance (pF) 15000 Transfer Characteristics Ciss 9000 VGS = 10 0.010 6000 Crss 3000 Coss 0.000 0 20 40 60 80 100 120 0 0 20 40 60 80 100 ID - Drain Current (A) VDS - Drain-to-Source (V) On-Resistance vs. Drain Current 10.0 I D = - 90 A VGS - Gate-to-Source Voltage (V) 8.0 rDS(on) - On-Resistance (Normalized) 2.1 2.5 VGS = 10 V ID = 20 A Capacitance 6.0 VDS = 50 V 1.7 VDS = 80 V 4.0 1.3 2.0 0.9 0.0 0.0 40.0 80.0 120.0 160.0 200.0 240.0 0.5 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 73474 S-71207-Rev. D, 18-Jun-07 On-Resistance vs. Junction Temperature www.vishay.com 3 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted RDS(on) - Drain-to-Source On-Resistance () 100 0.10 0.08 IS - Source Current (A) TJ = 150 C 10 25 C 0.06 0.04 125 C 0.02 25 C 0.00 1 2 3 4 5 6 7 8 9 10 1 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.9 6000 On-Resistance vs. Gate-to-Source Voltage 0.7 ID = 10 mA VGS(th) Variance (V) 0.5 Power (W) 5000 4000 0.3 3000 0.1 2000 - 0.1 1000 - 0.3 - 50 - 25 0 25 50 75 100 125 150 175 0 0.0001 0.001 0.01 Time (sec) 0.10 1 TJ - Temperature (C) Threshold Voltage 400 350 300 Power Dissipation (W) 250 200 150 100 50 0 25 50 75 100 125 150 175 TC - Case-Temperature (C) 100 1000 Single Pulse, Junction-to-Case (TC = 25 C) *Limited by r DS(on) 10 s 100 s ID - Drain Current (A) 10 1 ms 10 ms DC 1 Single pulse Tc = 25 C 0.1 0.1 Power Derating (Junction-to-Case) 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73474 S-71207-Rev. D, 18-Jun-07 SUM90P10-19L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 120 1000 90 I D - Drain Current (A) IDav - Peak Avalanche Curent (A) 100 60 10 30 1 0 0 25 50 75 100 125 150 175 TC - Case Temperature (C) 0.1 0.00001 0.0001 0.001 0.01 0.1 1.0 tin - Time in Avalanche (Sec) Max Avalanche and Drain Current vs. Case Temperature Normalized Effective Transient Thermal Impedance 1 0.5 0.2 0.1 0.05 0.02 Single Avalanche Current vs. Time 0.1 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (Sec) 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73474. Document Number: 73474 S-71207-Rev. D, 18-Jun-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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