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| TESP5700 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES * Package type: leaded * Package form: side view * Dimensions (L x W x H in mm): 4.5 x 5 x 6 * Radiant sensitive area (in mm2): 2.2 * High radiant sensitivity * Daylight blocking filter matched with 870 nm to 950 nm emitters 16936 * High cut-off frequency at VR = 2 V: 35 MHz * Angle of half sensitivity: = 60 * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION TESP5700 PIN photodiode is applicable to high speed data transmission specifically at low reverse voltage. Black epoxy package include side view lens and daylight blocking filter, matched to high speed IR emitters. APPLICATIONS * High speed data transmission specifically using low supply voltage * High speed detector for infrared radiation * Infrared remote control and free air data transmissionsystems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY COMPONENT TESP5700 Note Test condition see table "Basic Characteristics" Ira (A) 25 (deg) 60 0.5 (nm) 790 to 980 ORDERING INFORMATION ORDERING CODE TESP5700 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW C C C C K/W Document Number: 81573 Rev. 1.5, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 513 TESP5700 Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Serial resistance Open circuit voltage Temperature coefficient of Vo Short circuit current Reverse light current Temperature coefficient of Ira Absolute spectral sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time Cut-off frequency Note Tamb = 25 C, unless otherwise specified VR = 2 V, RL = 50 , = 870 nm VR = 2 V, RL = 50 , = 870 nm VR = 2 V, RL = 50 , = 870 nm TEST CONDITION IF = 50 mA IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 2 V, f = 1 MHz Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm, VR = 2 V Ee = 1 mW/cm2, = 870 nm, VR = 2 V VR = 2 V, = 870 nm VR = 5 V, = 950 nm SYMBOL VF V(BR) Iro CD RS Vo TKVo Ik Ira TKIra s() s() 16 60 1 17 40 430 - 2.6 23 25 0.13 0.57 0.37 60 870 790 to 980 10 10 4 10 MIN. TYP. 0.9 MAX. 1.3 UNIT V V nA pF mV mV/K A A %/K A/W A/W deg nm nm ns ns MHz Silicon PIN Photodiode, RoHS Compliant p 0.5 tr tf fc BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified I ra rel - Relative Reverse Light Current 1000 I ro - Reverse Dark Current ( nA) 1.4 1.2 100 VR = 5 V = 950 nm 1.0 10 VR = 10 V 1 20 40 60 80 100 0.8 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (C) 16931 Tamb - Ambient Temperature (C) 94 8409 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 514 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81573 Rev. 1.5, 08-Sep-08 TESP5700 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors I ra -Reverse Light Current ( A) ) rel - Relative Spectral Sensitivity S( 10 16935 1000 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 100 10 VR = 2 V = 870 nm 1 0.1 0.01 16932 0.1 1 850 950 1050 1150 Ee - Irradiance ( mW/cm2 ) - Wavelenght (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 I ra - Reverse Light Current ( A) = 870 nm Srel - Relative Sensitivity 1 mW/cm2 0 10 20 30 - Angular Displacement 40 1.0 0.9 0.8 0.7 50 60 70 80 10 0.1 mW/cm2 1 0.1 16933 11 0 100 94 8413 0.6 0.4 0.2 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 40 CD - Diode Capacitance (pF) 35 30 25 20 15 10 5 0 0.1 16934 E=0 f = 1 MHz 1.0 10.0 VR - Reverse Voltage (V) 100.0 Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 81573 Rev. 1.5, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 515 TESP5700 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant PACKAGE DIMENSIONS in millimeters 5 + 0.1 - 0.3 3.2 0.15 0.2 4.5 0.2 (2.4) 2.5 < 0.7 0.3 6 0.3 18.8 0.5 8.6 R 2.25 (sphere) 0.65 + 0.1 - 0.2 0.1 3.4 + 0.3 - Area not plane A C 0.45 + 0.2 - 0.1 0.4 + 0.15 2.54 nom. 1.1 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01 95 11475 www.vishay.com 516 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81573 Rev. 1.5, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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