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| BZM55-Series Vishay Semiconductors Small Signal Zener Diodes Features * Saving space * Hermetic sealed parts e2 * Electrical data identical with the devices BZT55..Series / TZM..Series * Fits onto SOD323/SOD110 footprints * Very sharp reverse characteristic * Low reverse current level * Very high stability * Low noise * Available with tighter tolerances * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612315 Applications * Voltage stabilization Mechanical Data Case: MicroMELF Weight: approx. 12 mg Packaging codes/options: TR / 2.5 k per 7" reel, 12.5 k/box TR3 / 10 k per 13" reel, 10 k/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Power dissipation Z-current Junction temperature Storage temperature range Test condition RthJA 300 K/W Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 - 65 to + 175 Unit mW mA C C Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction to ambient air Junction tie point Test condition mounted on epoxy-glass hard tissue, Fig. 1 35 m copper clad, 0.9 mm2 copper area per electrode Symbol RthJA RthJL Value 500 300 Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Test condition IF = 200 mA Symbol VF Min Typ. Max 1.5 Unit V Document Number 85597 Rev. 1.9, 10-Mar-06 www.vishay.com 1 BZM55-Series Vishay Semiconductors Electrical Characteristics BZM55C.. Partnumber Zener Voltage Range1) VZ at IZT Dynamic Resistance rzjT at IZT, f = 1kHz max 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 0.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 < 85 < 85 < 90 < 90 < 90 < 90 < 90 < 80 < 60 < 40 < 10 <8 <7 <7 < 10 < 15 < 20 < 20 < 26 < 30 < 40 < 50 < 55 < 55 < 80 < 80 < 80 < 80 < 80 < 90 < 90 110 125 135 150 200 250 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 rzjK at IZK, f = 1kHz Test Current IZT Temperature Coefficient TKVZ Test Current IZK Reverse Leakage Current IR IR at Tamb at Tamb = 25 C = 150 C A < 50 < 10 <4 <2 <2 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 100 < 50 < 40 < 40 < 40 < 40 < 20 < 10 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <5 <5 <5 < 10 < 10 < 10 < 10 < 10 at VR V min BZM55C2V4 BZM55C2V7 BZM55C3V0 BZM55C3V3 BZM55C3V6 BZM55C3V9 BZM55C4V3 BZM55C4V7 BZM55C5V1 BZM55C5V6 BZM55C6V2 BZM55C6V8 BZM55C7V5 BZM55C8V2 BZM55C9V1 * BZM55C10 * BZM55C11 * BZM55C12 * BZM55C13 * BZM55C15 * BZM55C16 * BZM55C18 * BZM55C20 * BZM55C22 * BZM55C24 * BZM55C27 * BZM55C30 * BZM55C33 * BZM55C36 * BZM55C39 * BZM55C43 * BZM55C47 * BZM55C51 * BZM55C56 * BZM55C62 * BZM55C68 * BZM55C75 * 1) *) mA min - 0.09 - 0.09 - 0.08 - 0.08 -0.08 - 0.08 - 0.06 - 0.05 - 0.02 - 0.05 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 %/K max - 0.06 - 0.06 - 0.05 - 0.05 - 0.05 - 0.05 - 0.03 0.02 0.02 0.05 0.06 0.07 0.07 0.08 0.09 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 2.28 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 tp 10 ms, T/tp > 1000 Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin 35 nA at Tj 25 C www.vishay.com 2 Document Number 85597 Rev. 1.9, 10-Mar-06 BZM55-Series Vishay Semiconductors Electrical Characteristics BZM55B.. Partnumber Zener Voltage Range1) VZ at IZT Dynamic Resistance rzjT at IZT, f = 1kHz max 2.45 2.76 3.06 3.36 3.68 3.98 4.38 4.80 5.20 5.72 6.32 6.94 7.65 8.36 9.28 10.20 11.22 12.24 13.26 15.30 16.30 18.36 20.40 22.45 24.5 27.6 30.6 33.6 36.7 39.8 43.9 47.9 52.0 57.1 63.2 69.4 76.5 < 85 < 85 < 90 < 90 < 90 < 90 < 90 < 80 < 60 < 40 < 10 <8 <7 <7 < 10 < 15 < 20 < 20 < 26 < 30 < 40 < 50 < 55 < 55 < 80 < 80 < 80 < 80 < 80 < 90 < 90 < 110 < 125 < 135 < 150 < 200 < 250 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 rzjK at IZK, f = 1kHz Test Current IZT Temperature Coefficient TKVZ Test Current IZK Reverse Leakage Current IR at Tamb = 25 C A < 50 < 10 <4 <2 <2 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 100 < 50 < 40 < 40 < 40 < 40 < 20 < 10 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <5 <5 <5 < 10 < 10 < 10 < 10 < 10 IR at Tamb = 150 C at VR V min BZM55B2V4 BZM55B2V7 BZM55B3V0 BZM55B3V3 BZM55B3V6 BZM55B3V9 BZM55B4V3 BZM55B4V7 BZM55B5V1 BZM55B5V6 BZM55B6V2 BZM55B6V8 BZM55B7V5 BZM55B8V2 BZM55B9V1 * BZM55B10 * BZM55B11 * BZM55B12 * BZM55B13 * BZM55B15 * BZM55B16 * BZM55B18 * BZM55B20 * BZM55B22 * BZM55B24 * BZM55B27 * BZM55B30 * BZM55B33 * BZM55B36 * BZM55B39 * BZM55B43 * BZM55B47 * BZM55B51 * BZM55B56 * BZM55B62 * BZM55B68 * BZM55C75 * 1) *) mA min - 0.09 - 0.09 - 0.08 - 0.08 - 0.08 - 0.08 - 0.06 - 0.05 - 0.02 - 0.05 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 %/K max - 0.06 - 0.06 - 0.05 - 0.05 - 0.05 - 0.05 - 0.03 0.02 0.02 0.05 0.06 0.07 0.07 0.08 0.09 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 2.35 2.64 2.94 3.24 3.52 3.82 4.22 4.6 5 5.48 6.08 6.66 7.35 8.04 8.92 9.8 10.78 11.76 12.74 14.7 15.7 17.64 19.6 21.55 23.5 26.4 29.4 32.4 35.3 38.2 42.1 46.1 50 54.9 60.8 66.6 73.5 tp 10 ms, T/tp > 1000 Additionnal measurement of Voltage group 9V1 to 75 at 95 % Vzmin 35 nA at Tj 25 C Document Number 85597 Rev. 1.9, 10-Mar-06 www.vishay.com 3 BZM55-Series Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified Ptot - Total Power Dissipation (mW) 500 400 300 200 100 0 0 CD - Diode Capacitance (pF) 600 200 150 VR = 2 V Tj = 25 C 100 50 0 40 80 120 160 200 0 95 9601 5 10 15 20 25 95 9602 Tamb - Ambient Temperature (C) VZ - Z-Voltage (V) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 4. Diode Capacitance vs. Z-Voltage VZtn - Relative Voltage Change 1000 VZ - Voltage Change (mV) 1.3 VZtn = VZt/VZ (25 C) Tj = 25 C 1.2 1.1 1.0 0.9 0.8 - 60 95 9599 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 4 x 10-4/K 2 x 10-4/K 100 IZ = 5 mA 10 0 - 2 x 10-4/K - 4 x 10-4/K 1 0 95 9598 5 10 15 20 25 0 60 120 180 240 VZ - Z-Voltage (V) Tj - Junction Temperature (C) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25C Figure 5. Typical Change of Working Voltage vs. Junction Temperature TKVZ - Temperature Coefficient of VZ (10-4/K) 15 IF - Forward Current (mA) 100 10 Tj = 25 C 10 1 5 IZ = 5 mA 0.1 0.01 0.001 0 -5 0 95 9600 10 20 40 30 VZ - Z-Voltage (V) 50 95 9605 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 3. Temperature Coefficient of Vz vs. Z-Voltage Figure 6. Forward Current vs. Forward Voltage www.vishay.com 4 Document Number 85597 Rev. 1.9, 10-Mar-06 BZM55-Series Vishay Semiconductors 100 80 IZ - Z-Current (mA) Ptot = 500 mW Tamb = 25 C 0.71 1.3 1.27 0.152 60 25 9.9 0.355 40 10 20 2.5 0 0 95 9604 4 6 8 12 20 95 10329 24 VZ - Z-Voltage (V) Figure 7. Z-Current vs. Z-Voltage Figure 10. Board for RthJA definition (in mm) 50 40 30 20 10 0 15 95 9607 IZ - Z-Current (mA) Ptot = 500 mW Tamb = 25 C Reflow Soldering 1.2 0.8 20 25 30 35 0.8 2.4 0.8 16773 VZ - Z-Voltage (V) Figure 8. Z-Current vs. Z-Voltage Figure 11. Recommended foot pads (in mm) rZ - Differential Z-Resistance () 1000 Wave Soldering IZ = 1 mA 100 1.4 5 mA 10 10 mA 0.9 1 Tj = 25 C 1.0 2.8 0.9 0 95 9606 5 10 15 20 25 16774 VZ - Z-Voltage (V) Figure 9. Differential Z-Resistance vs. Z-Voltage Figure 12. Recommended foot pads (in mm) Document Number 85597 Rev. 1.9, 10-Mar-06 www.vishay.com 5 BZM55-Series Vishay Semiconductors Zthp - Thermal Resistance for Pulse Cond. (KW) 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 tP/T = 0.1 tP/T = 0.02 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 tP - Pulse Length (ms) 102 tP/T = 0.01 tP/T = 0.05 1 10-1 95 9603 RthJA = 300 K/W T = Tjmax - Tamb Figure 13. Thermal Response Package Dimensions in mm (Inches) Cathode indification 1 (0.039) surface plan Glass case MicroMELF 35 1. 2.0 (0.079) 1.8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > R 2.5 (R 0.098) Glass ISO Method E Reflow Soldering 1.2 (0.047) 1.4 (0.055) Wave Soldering 0.8 (0.031) 0.8 (0.031) 2.4 (0.094) Document No.: 6.560-5007.01-4 Rev. 11, 07.Feb.2005 9612072 0.8 (0.031) 0.9 (0.035) 1.0 (0.039) 2.8 (0.110) www.vishay.com 6 Document Number 85597 Rev. 1.9, 10-Mar-06 surface plan 0.6 (0.024) 0.9 (0.035) G < la ss (0 .0 53 ) BZM55-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85597 Rev. 1.9, 10-Mar-06 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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