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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 PRE on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som ARY IMIN L MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT15SM-24 GENERAL INVERTER * UPS USE CT15SM-24 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 2 2 19.5MIN. 4 20.0 3.2 4.4 1.0 q 5.45 w e 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e VCES ............................................................................. 1200V IC ......................................................................................... 15A High Speed Switching Low VCE Saturation Voltage q TO-3P APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg -- (Tc = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 1200 20 30 15 30 250 -40 ~ +150 -40 ~ +150 4.8 Unit V V V A A W C C g Feb.1999 Typical value PRE on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som ARY IMIN L MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT15SM-24 GENERAL INVERTER * UPS USE ELECTRICAL CHARACTERISTICS Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter (Tj = 25C) Test conditions IC = 1mA, VGE = 0V VGE = 30V, VCE = 0V VCE = 1200V, VGE = 0V IC = 1.5mA, VCE = 10V IC = 15A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. 1200 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- 6.0 2.7 1600 150 45 50 150 150 250 -- Max. -- 0.5 1 7.5 3.6 -- -- -- -- -- -- -- 0.50 Unit V A mA V V pF pF pF ns ns ns ns C/W Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance VCC = 600V, Resistance load, IC = 15A, VGE = 15V, RGE = 20 Junction to case PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25C 20 COLLECTOR CURRENT IC (A) VGE = 20V 15V OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C 11V 16 8 12 10V 6 8 4 IC = 30A 15A 4 9V 2 10A 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Feb.1999 PRE on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som ARY IMIN L MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT15SM-24 GENERAL INVERTER * UPS USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) 5 COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25C COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 20 VCE = 10V Tj = 25C 4 16 3 12 2 8 1 4 0 0 4 8 12 16 20 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 CAPACITANCE Cies, Coes, Cres (pF) Cies SWITCHING TIME (ns) 104 7 5 3 2 103 7 5 3 2 3 2 102 7 5 3 2 101 0 10 23 tf td(off) tr td(on) Tj = 25C VCC = 600V VGE = 15V RG = 20 102 7 5 3 Tj = 25C 2 VGE = 0V 101 f = 1MHZ Coes Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 101 23 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 24 20 16 600V VCC = 400V TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7101 100 TRANSIENT THERMAL IMPEDANCE Zth (j-c) 7 5 3 2 10-1 7 5 3 2 7 5 3 2 12 8 4 0 10-2 7 5 3 2 10-2 7 5 3 2 0 20 40 60 80 100 10-3 10-3 10-5 2 3 5 710-4 2 3 5 710-3 PULSE WIDTH tw (s) Feb.1999 GATE CHARGE Qg (nc) |
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