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ESAC87M-009R (16A) SCHOTTKY BARRIER DIODE 15.5 0.3 (90V / 16A ) Outline drawings, mm 5.5 0.3 o3.2 0.2 5.5 0.2 9.3 0.3 3.2 +0.3 2.3 0.2 2.10.3 1.6 0.3 1.1 --0.1 +0.2 20 Min 21.5 0.3 5.45 0.2 5.45 0.2 0.6 +0.2 3.5 0.2 Features Insulated package by fully molding Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2. Drain 3. Source Connection diagram Applications High speed power switching h arc Maximum ratings and characteristics m on . Absolute maximum ratings te ole esign Symbol Conditions Item Rating Unit obs w d e d b or ne 90 VRRM Repetitive peak reverse voltage V ule d f ed en VRSM ch 100 Non-repetitive peak reverse voltage V tw=500ns, duty=1/40 is s comm 1500 Isolating voltage uct V t re Terminals-to-case, V AC. 1min. od o r p NIo Square wave, duty=1/2 16* Average output current A his Tc=115C T iso 1 2 3 0 20 7. Surge current Operating junction temperature Storage temperature IFSM Tj Tstg Sine wave 10ms 100 -40 to +150 -40 to +150 A C C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=6A VR=VRRM Junction to case Max. 0.9 10 2.0 Unit V mA C/W (90V / 16A ) Characteristics Forward Characteristic (typ.) 100 10 3 ESAC87M-009R (16A) Reverse Characteristic (typ.) Tj=150 C 10 2 o Tj=125 C o (mA) 10 10 1 Tj=100 C o (A) Tj=150 C Tj=125 C Tj=100 C Tj=25 C 1 o o o o Reverse Current Forward Current 10 0 10 -1 Tj= 25 C o IR 10 -2 IF 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -3 0 10 20 30 40 50 60 70 80 90 100 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 13 12 11 Io Reverse Power Dissipation 28 26 24 360 DC VR 10 9 8 7 6 5 4 3 360 22 20 18 16 14 12 10 8 6 4 2 0 Square wave =60 Square wave =120 o Sine wave =180 Square wave =180 DC 2 1 0 0 1 2 Io ThCurrent Derating (Io-Tc) 160 150 140 arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p Reverse Power Dissipation o o o Forward Power Dissipation h o 0 20 7. (W) (W) =180 WF Per 1element 7 8 3 4 5 6 9 PR 0 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) VR Reverse Voltage (V) Junction Capacitance Characteristic (typ.) 1000 C) o 130 Case Temperature 120 Square wave =180 110 Sine wave =180 o o Junction Capacitance Cj 24 DC ( (pF) 100 Square wave =120 100 360 Io o 90 Tc Square wave =60 VR=50V o 80 70 0 2 4 6 8 10 12 14 16 18 20 22 10 10 100 Io Average Output Current (A) :Conduction angle of forward current for each rectifier element VR Reverse Voltage (V) Io:Output current of center-tap full wave connection (90V / 16A ) Surge Capability 1000 ESAC87M-009R (16A) Peak Half - Wave Current I FSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 1 10 0 10 -1 10 -3 Th arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p 10 -2 Transient Thermal Impedance h 0 20 ( o 7. C/W ) 10 -1 10 0 10 1 10 2 t Time (sec.) |
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