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| FDD5N50F N-Channel MOSFET, FRFET December 2007 FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55 Features * RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A * Low gate charge ( Typ. 11nC) * Low Crss ( Typ. 5pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. D G S D G D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 500 30 3.5 2.1 14 257 3.5 4 4.5 40 0.3 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.4 110 Units o C/W (c)2007 Fairchild Semiconductor Corporation FDD5N50F Rev. A1 1 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDD5N50F FDD5N50F Device FDD5N50FTM FDD5N50FTF Package D-PAK D-PAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.6 10 100 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 1.75A VDS = 20V, ID = 1.75A (Note 4) 3.0 - 1.25 4.3 5.0 1.55 - V S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 5A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 490 66 5 11 3 5 650 88 7.5 15 - pF pF pF nC nC nC - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25 (Note 4, 5) - 13 22 28 20 36 54 66 50 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 3.5A VGS = 0V, ISD = 5A dIF/dt = 100A/s (Note 4) - 65 0.120 3.5 14 1.5 - A A V ns C Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 42mH, IAS = 3.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 3.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD5N50F Rev. A1 2 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] ID,Drain Current[A] 1 150 C 25 C o o 1 0.1 0.04 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 1 VDS,Drain-Source Voltage[V] 10 0.1 *Notes: 1. VDS = 20V 2. 250s Pulse Test 4 5 6 7 VGS,Gate-Source Voltage[V] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 50 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 2.0 10 150 C 25 C o o 1.8 VGS = 10V 1.6 VGS = 20V 1 *Notes: 1. VGS = 0V 1.4 *Note: TJ = 25 C o 1.2 0 4 8 12 ID, Drain Current [A] 16 20 0.2 0.0 2. 250s Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics 1000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 100V VDS = 250V VDS = 400V 750 Capacitances [pF] 8 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 6 500 Coss 4 250 Crss 2 *Note: ID = 5A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 3 6 9 Qg, Total Gate Charge [nC] 12 FDD5N50F Rev. A1 3 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. Maximum Safe Operating Area 30 40s BVDSS, [Normalized] Drain-Source Breakdown Voltage 10 ID, Drain Current [A] 100s 1ms 10ms 1.1 1 Operation in This Area is Limited by R DS(on) DC 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 175 0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current 4 ID, Drain Current [A] 3 2 1 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve 3 Thermal Response [ZJC] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 *Notes: t2 o 0.01 Single pulse 0.003 -5 10 1. ZJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 10 -4 10 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 0 10 1 10 2 FDD5N50F Rev. A1 4 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD5N50F Rev. A1 5 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD5N50F Rev. A1 6 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD5N50F Rev. A1 7 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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