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| SMD Type High Voltage Transistor FMMT458 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 400 Volt VCEO +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 400 400 5 1 225 200 500 -55 to +150 Unit V V V A mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type FMMT458 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector Cut-Off Current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter turn on voltage Symbol V(BR)CBO IC=100iA V(BR)CEO IC=10mA V(BR)EBO IE=100iA ICBO ICES IEBO VCE(sat) VCB=320V VCE=320V VEB=4V IC=20mA,IB=2mA IC=50mA,IB=6mA VBE(sat) IC=50mA,IB=5mA VBE(on) IC=50mA,VCE=10V IC=1mA, VCE=10V Static Forward Current Transfer Ratio hFE IC=50mA, VCE=10V* IC=100mA, VCE=10V* Transition frequency Output capacitance Switching times fT Cobo ton toff IC=10mA,VCE=20V,f=20MHz VCB=20V, f=1MHz IC=50mA, VCC=100V IB1=5mA, IB2=-10mA Testconditons Transistors Min 400 400 5 Typ Max Unit V V V 100 100 100 0.2 0.5 0.9 0.9 100 100 15 50 5 135 2260 300 nA nA nA V V V V MHz pF ns ns Marking Marking 458 2 www.kexin.com.cn |
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