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| INCHANGE Semiconductor isc Product Specification MJE4350/4351/4352/4353 isc Silicon PNP Power Transistors DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 *Low Saturation Voltage *Complement to Type MJE4340/4341/4342/4343 APPLICATIONS *Designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MJE4350 Collector-Base Voltage MJE4351 MJE4352 MJE4353 MJE4350 Collector-Emitter Voltage MJE4351 MJE4352 MJE4353 VEBO IC ICM IB B VALUE -100 -120 UNIT VCBO V -140 -160 -100 -120 V -140 -160 -7 -16 -20 -5 125 150 -65~150 V A A A W VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification MJE4350/4351/4352/4353 isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER MJE4350 MJE4351 IC= -0.2A ;IB= 0 B CONDITIONS MIN -100 -120 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -140 -160 MJE4352 MJE4353 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage MJE4350 MJE4351 MJE4352 MJE4353 ICEX ICBO IEBO hFE-1 hFE-2 fT COB Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance IC= -8A; IB= -0.8A B -2.0 -3.5 -3.9 -3.9 -0.75 -0.75 V V V V IC= -16A; IB= -2A IC= -16A; IB= -2A IC= -16A; VCE= -4V VCE= -50V; IB= 0 B ICEO Collector Cutoff Current VCE= -60V; IB= 0 B mA VCE= -70V; IB= 0 B -0.75 -0.75 -1.0 -5.0 -0.75 -1.0 15 8 1.0 800 MHz pF mA mA mA VCE= -80V; IB= 0 B VCE= RatedVCB;VBE(off)= -1.5V VCE= RatedVCB;VBE(off)= -1.5V;TC=150 VCB= Rated VCB ; IE=0 VEB= -7V; IC=0 IC= -8A; VCE= -2V IC= -16A; VCE= -4V IC= -1A ; VCE= -20V;ftest= 0.5MHz IE= 0; VCB= -10V; ftest= 0.1MHz isc Websitewww.iscsemi.cn 2 |
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