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| TCUT1200 Vishay Semiconductors Subminiature Dual-Channel Transmissive Optical Sensor with Phototransistor Outputs, RoHS Compliant, Released for Lead (Pb)-free Solder Process Description The TCUT1200 is a compact transmissive sensor that includes an infrared emitter and two phototransistor detectors, located face-to-face in a surface-mount package. A Cath Cath Coll E E 19151 Features * Package type: Surface-mount * Detector type: Phototransistor * Dimensions: L 5 mm x W 4 mm x H 4 mm * Gap: 2 mm * Aperture: 0.3 mm * * * * * e4 Channel distance (center to center): 0.8 mm Typical output current under test: IC = 0.5 mA Emitter wavelength: 950 nm Lead (Pb)-free soldering released Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC * Minimum order quantity: 2000 pcs, 2000 pcs/reel Applications * Accurate position sensor for encoder * Detection of motion direction * Computer mouse and trackballs Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Coupler Parameter Power dissipation Ambient temperature range Storage temperature range Soldering temperature in accordance with fig. 13 Test condition Tamb 25 C Symbol P Tamb Tstg Tsd Value 150 - 40 to + 85 - 40 to + 100 260 Unit mW C C C Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation tp 10 s Tamb 25 C Test condition Symbol VR IF IFSM PV Value 5 25 100 75 Unit V mA mA mW Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Document Number 83755 Rev. 2.2, 13-Mar-07 Tamb 25 C Test condition Symbol VCEO VECO IC PV Value 70 7 20 75 Unit V V mA mW www.vishay.com 1 TCUT1200 Vishay Semiconductors 200 P - Power Dissipation (mW) Sensor 150 100 50 Emitter/Detector 0 0 16538 100 75 25 50 Tamb - Ambient Temperature (C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Coupler Parameter Collector current per channel Collector emitter saturation voltage Test condition VCE = 5 V, IF = 15 mA IF = 15 mA, IC = 0.05 mA Symbol IC VCEsat Min 300 Typ. 500 0.4 Max Unit A V Input (Emitter) Parameter Forward voltage Reverse current Junction capacitance VR = 5 V VR = 0 V, f = 1 MHz Test condition IF = 15 mA Symbol VF IR Cj 50 Min Typ. 1.2 Max 1.5 10 Unit V A pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test condition IC = 1 mA IE = 100 A VCE = 25 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min 70 7 10 100 Typ. Max Unit V V nA Switching Characteristics Parameter Rise time Fall time Test condition IC = 0.3 mA, VCE = 5 V, RL = 1000 (see figure 3) IC = 0.3 mA, VCE = 5 V, RL = 1000 (see figure 3) Symbol tr tf Min Typ. 20.0 30.0 Max 150 150 Unit s s www.vishay.com 2 Document Number 83755 Rev. 2.2, 13-Mar-07 TCUT1200 Vishay Semiconductors IF 0 IF IF +5V IC adjusted by I F 0 IC 100 % 90 % tp t RG = 50 tp = 20 T tp = 1 ms Channel I Channel II 50 16536 Oscilloscope RL CL 1M 20 pF 10 % 0 tr td t on pulse duration delay time rise time turn-on time ts tf t off t storage time fall time turn-off time 1000 tp td tr t on (= t d + tr) 96 11698 ts tf t off (= t s +t f ) Figure 2. Test Circuit for tr and tf Figure 3. Switching Times Typical Characteristics Tamb = 25 C, unless otherwise specified 1000 10 VCE = 5 V I F - Forward Current (mA) 100 I C - Collector Current (mA) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 0.1 1 0.01 0.1 13660 0.001 0.1 13665 V F - Forward Voltage (V) 10 1 I F - Forward Current (mA) 100 Figure 4. Forward Current vs. Forward Voltage Figure 6. Collector Current vs. Forward Current VCEsat - Coll. Emitter Saturation Voltage (V) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 - 40 - 20 0 20 40 60 80 100 13661 1.3 I F = 15 mA I C = 50 A I F = 15 mA VF - Forward Voltage (V) 1.2 1.1 1.0 0.9 0.8 - 40 - 20 0 20 40 60 80 100 13662 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Figure 5. Collector Emitter Saturation Voltage vs. Ambient Temperature Figure 7. Forward Voltage vs. Ambient Temperature Document Number 83755 Rev. 2.2, 13-Mar-07 www.vishay.com 3 TCUT1200 Vishay Semiconductors 1.0 0.9 I C - Collector Current (mA) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 40 - 20 13663 100 VCE = 5 V I F = 15 mA t r / t f - Rise/Fall Time (s) 90 80 70 60 50 40 30 20 10 0 tr 0 250 500 750 1000 1250 1500 1750 2000 16552 I F = 5 mA tf 0 20 40 60 80 100 Tamb - Ambient Temperature (C) IC - Collector Current (A) Figure 8. Collector Current vs. Ambient Temperature Figure 11. Rise/Fall Time vs. Collector Current 10000 ICEO - Collector Dark Current (nA) V CE = 10 V IF = 0 1000 IF = 15 mA + VC = 5 V 100 74HCT14 10 10 k 1 0 96 11875 VE UQ 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) GND 13887 Figure 9. Collector Dark Current vs. Ambient Temperature Figure 12. Application example 1.25 I Crel - Relative Collector Current s 1 0.75 0.5 0.25 0 - 1.5 13657 -1 - 0.5 0 0.5 1 1.5 s - Displacement (mm) Figure 10. Relative Collector Current vs. Displacement www.vishay.com 4 Document Number 83755 Rev. 2.2, 13-Mar-07 TCUT1200 Vishay Semiconductors Reflow Solder Profiles Drypack Devices are packed in moisture barrier bags (MBB) to prevent the products from absorbing moisture during transportation and storage. Each bag contains a desiccant. 280 260 240 19152 260 C 230 C 4 C/s MAX 4 C/s MAX 180 C 150 C Pre-heating time: 90 30 s Heating time: 30 10 s Temperature (C) 220 200 180 160 140 120 100 80 Floor Life Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. According JEDEC, J-STD-020, this component is released to Moisture Sensitivity Level 2, for use of Lead Tin (SnPb) Reflow Solder Profile (Figure 14) or Level 3, for use of Lead (Pb)-free (Sn) Reflow Solder Profile (Figure 13). Floor Life: 12 month (Level 2) or 168 hours (Level 3) Floor Conditions: Tamb < 30 C, RH < 60 % Time (s) Figure 13. Lead (Pb)-free (Sn) Reflow Solder Profile Drying 280 260 240 19153 240 C 230 C 4 C/s MAX 4 C/s MAX 180 C 150 C Pre-heating time: 90 30 s Heating time: 10 - 20 s Temperature (C) 220 200 180 160 140 120 100 80 In case of moisture absorption, devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h at 40 C ( 5 C), RH < 5 % or 96 h at 60 C ( 5 C), RH < 5 %. Time (s) Figure 14. Lead Tin (SnPb) Reflow Solder Profile Document Number 83755 Rev. 2.2, 13-Mar-07 www.vishay.com 5 TCUT1200 Vishay Semiconductors Dimensions of Reel and Tape in millimeters 13722 Dimensions of Tape in millimeters 13720 www.vishay.com 6 Document Number 83755 Rev. 2.2, 13-Mar-07 TCUT1200 Vishay Semiconductors Package Dimensions 19311 Document Number 83755 Rev. 2.2, 13-Mar-07 www.vishay.com 7 TCUT1200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 83755 Rev. 2.2, 13-Mar-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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