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| Ordering number : ENA0392 VEC2812 SANYO Semiconductors DATA SHEET VEC2812 Features * * MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications * * DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * 1.8V drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 1 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit 20 10 1.5 6 0.8 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : BZ Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806PE SY IM TC-00000280 No. A0392-1/6 VEC2812 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=500A IF=500mA IF=1A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.35 0.4 27 10 0.39 0.45 360 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=20V, VGS=0V VGSS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A IS=1.5A, VGS=0V 0.4 1.7 2.8 160 220 310 100 22 15 5.5 18 17 8 4.5 0.4 0.4 0.9 1.2 210 290 435 20 1 10 1.3 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7012-004 Electrical Connection 8 7 6 5 0.3 0.15 8 7 65 0.25 1 2 2.9 3 0.65 4 1 2 3 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view 2.8 2.3 0.25 0.75 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 0.07 No. A0392-2/6 VEC2812 Switching Time Test Circuit [MOSFET] trr Test Circuit [SBD] VIN 4V 0V VIN VDD=10V Duty10% 100mA 10mA D PW=10s D.C.1% 10s --5V G trr VEC2812 50 P.G S 2.0 ID -- VDS 3.0V 2.5 V [MOSFET] 2.0 ID -- VGS VDS=10V 100mA ID=1A RL=10 VOUT 50 100 10 [MOSFET] --25 C Ta= 1.8 Drain Current, ID -- A 4.0V Drain Current, ID -- A 6.0V 1.5 V 1.4 1.2 1.0 0.8 1.2 0.8 10.0 V 0.4 0.4 VGS=1.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.2 0 0 0.2 0.4 0.6 0.8 1.0 -25 C 25C Ta= 7 5C 0.6 1.2 1.4 1.6 25 1.8 2.0 IT02902 120 140 160 IT11826 1.6 8 1. 1.6 Drain-to-Source Voltage, VDS -- V 400 IT02901 400 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 200 150 100 50 0 0 2 4 6 8 10 IT02985 350 300 250 200 150 100 50 0 --60 1.0A ID=0.5A , 0.5A I D= =2.5 VGS V .0A I D=1 =4.0V , VGS --40 --20 0 20 40 60 80 100 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- C No. A0392-3/6 C V 75 C VEC2812 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 yfs -- ID [MOSFET] VDS=10V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.3 0.4 IS -- VSD [MOSFET] VGS=0V = Ta --2 C 5 C 75 Source Current, IS -- A C 25 Ta= 75 0.5 C C --25 C 25 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Drain Current, ID -- A 100 7 IT02905 SW Time -- ID [MOSFET] 1000 7 5 IT02906 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] Switching Time, SW Time -- ns 5 3 2 VDD=10V VGS=4V Ciss, Coss, Crss -- pF f=1MHz 3 2 td(off) tr 10 7 5 3 2 tf td(on) 100 7 5 3 2 Ciss Coss Crss 0 2 4 6 8 10 12 14 16 18 20 1.0 0.1 10 2 3 5 7 1.0 2 3 5 IT02907 Drain Current, ID -- A 10 9 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.5A Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT02908 ASO [MOSFET] IDP=6A 1m 10s 10 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 IT07692 ID=1.5A s m s 10 0m s D C op er at io n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 0.01 0.01 Total Gate Charge, Qg -- nC 1.0 PD -- Ta Drain-to-Source Voltage, VDS -- V IT09925 [MOSFET] Allowable Power Dissipation, PD -- W 0.8 M ou nt ed on 0.6 ac er am ic bo 0.4 ar d( 90 0m m2 !0 0.2 .8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT09926 No. A0392-4/6 VEC2812 10 7 5 3 2 IF -- VF [SBD] 3 2 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0 IR -- VR C Ta=125 100C 75C [SBD] C Ta =-25 C 5C 0.01 7 5 3 2 0 0.001 0.1 0.2 0.3 0.4 0.5 IT07944 12 25 0.1 7 5 3 2 0 C 75 1.0 7 5 3 2 Reverse Current, IR -- A Forward Current, IF -- A C 50 C 50C 25C 10 --25C 10 20 30 40 IT07945 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.6 PF(AV) -- IO (1) Reverse Voltage, VR -- V 140 [SBD] (2) (4) (3) Tc -- IO 0.5 Case Temperature, Tc -- C (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 120 [SBD] (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 100 0.4 0.3 Rectangular wave 360 80 60 0.2 40 Sine wave 0.1 180 0 0 0.2 0.4 0.6 0.8 360 1.0 (1) (2) (4) (3) 20 0 1.2 IT08214 0 0.2 0.4 0.6 0.8 1.0 1.2 IT08216 Average Output Current, IO -- A 3 2 C -- VR Average Output Current, IO -- A [SBD] f=1MHz Interterminal Capacitance, C -- pF 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Reverse Voltage, VR -- V 5 7 100 IT07948 No. A0392-5/6 VEC2812 Note on usage : Since the VEC2812 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0392-6/6 |
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