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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION With TO-220Fa package Low collector saturation voltage Complementary to type 2SD1266/1266A APPLICATIONS For low-frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICM HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE 2SB941A 2SB941 2SB941A 2SB941 Open emitter OND IC CONDITIONS TOR UC VALUE -60 -80 -60 -80 -5 -3 -5 UNIT V Open base V Open collector V A A Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 35 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB941 IC=-30mA ,IB=0 2SB941A IC=-3A, IB=-0.375A IC=-3A ; VCE=-4V VEB=-5V; IC=0 2SB941 2SB941A 2SB941 2SB941A VCE=-30V; IB=0 CONDITIONS 2SB941 2SB941A SYMBOL MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.2 -1.8 -1 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current ICEO Collector cut-off current -0.3 VCE=-60V; IB=0 VCE=-60V; VBE=0 -0.2 VCE=-80V; VBE=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 70 mA ICES Collector cut-off current mA hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency Switching times ton tstg tf Turn-on time Storage time Fall time HAN INC P 120-250 SEM GE IC=0.5A; VCE=-10V,f=10MHz OND IC 10 TOR UC 250 30 0.5 1.2 0.3 MHz |I |I |I s s s IC=-1A IB1=-0.1A ,IB2=0.1A hFE-1 Classifications Q 70-150 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB941 2SB941A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941,2SB941A SEM GE HAN INC OND IC TOR UC 4 |
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