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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) *Good Linearity of hFE *Low Saturation Voltage APPLICATIONS *Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25 0.1 A 10 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 1.25 150 Tstg Storage Temperature Range -40~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1514 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10A ; IE= 0 IC= 1mA ; RBE= 300 V V(BR)CEO Collector-Emitter Breakdown Voltage 300 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10A ; IC= 0 5 V VCE(sat) ICEO Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA VCE= 250V; RBE= 1.5 V A Collector Cutoff Current 1 hFE DC Current Gain IC= 20mA ; VCE= 20V 30 200 fT Current-Gain--Bandwidth Product IC= 20mA ; VCE= 20V 80 MHz COB Output Capacitance IE= 0; VCB= 20V,ftest= 1MHz 4 pF isc Websitewww.iscsemi.cn 2 |
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