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INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC4570
DESCRIPTION *High Current-Gain--Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz *Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz
APPLICATIONS *Designed for use in UHF oscillator and mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
30
mA
PC
0.12
W
TJ
125
Tstg
Storage Temperature Range
-55~125
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4570
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1
A
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
0.1
A
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5mA ; IB= 0.5mA
0.5
V
hFE
DC Current Gain
IC= 5mA ; VCE= 5V
40
200
fT
Current-Gain--Bandwidth Product
IC= 5mA ; VCE= 5V
5.5
GHz
COB S21e2
Output Capacitance
IE= 0 ; VCB= 3V;f= 1.0MHz
0.7
0.9
pF
Insertion Power Gain
IC= 5mA ; VCE= 5V;f= 1.0GHz
5.0
dB
hFE Classification Rank Marking hFE T72 T72 40-80 T73 T73 60-120 T74 T74 100-200
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC4570
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification 2SC4570
isc Silicon NPN RF Transistor
S-PARAMETER
VCE = 5 V, IC = 5 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.887 0.781 0.663 0.555 0.456 0.388 0.328 0.285 0.250 0.223 0.201 0.184 0.169 0.159 0.150 0.145 0.141 0.137 0.136 0.139 0.140 0.141 0.145 0.148 0.154 0.158 0.163 0.167 0.173 0.179
S11
ANG -16.9 -34.4 -49.9 -63.2 -74.9 -83.6 -92.0 -99.2 -106.3 -113.2 -120.2 -127.0 -133.9 -140.6 -148.7 -155.8 -162.4 -168.8 -175.8 -177.0 -170.8 -165.7 -160.2 -155.2 -150.9 -146.8 -142.4 -138.3 -135.3 -131.3 MAG 8.517 8.107 7.483 6.775 6.086 5.369 4.815 4.342 3.955 3.618 3.334 3.101 2.899 2.724 2.561 2.428 2.314 2.206 2.114 2.029 1.946 1.875 1.816 1.757 1.708 1.658 1.614 1.570 1.534 1.498
S21
ANG 156.4 140.8 127.9 117.0 107.9 100.7 94.4 89.2 84.3 80.2 76.5 72.8 69.4 66.0 63.1 60.1 57.1 54.5 51.6 48.8 46.4 43.9 41.3 38.9 36.4 34.1 31.8 29.5 27.3 25.1 4 MAG 0.024 0.042 0.057 0.067 0.076 0.085 0.094 0.103 0.111 0.122 0.129 0.138 0.147 0.156 0.166 0.174 0.183 0.193 0.201 0.210 0.219 0.229 0.239 0.247 0.258 0.266 0.273 0.284 0.291 0.299
S12
ANG 76.9 68.3 62.6 60.4 59.2 58.1 58.3 57.9 58.0 56.7 57.1 56.5 55.9 55.6 55.0 54.2 53.5 53.2 52.4 51.4 50.6 49.5 48.5 47.7 46.3 45.5 44.3 43.3 42.4 41.2 MAG 0.940 0.832 0.735 0.662 0.606 0.567 0.540 0.520 0.503 0.490 0.482 0.474 0.467 0.463 0.457 0.453 0.448 0.445 0.439 0.429 0.423 0.417 0.413 0.406 0.401 0.397 0.393 0.394 0.395 0.396
S22
ANG -13.3 -22.8 -28.2 -31.4 -33.4 -35.0 -36.3 -37.6 -38.8 -40.1 -41.5 -42.9 -44.4 -45.7 -47.1 -48.4 -49.8 -51.3 -52.7 -54.9 -56.7 -58.9 -61.1 -63.7 -66.8 -70.0 -73.0 -76.5 -79.8 -82.7
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 5 V, IC = 3 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.929 0.868 0.785 0.700 0.613 0.543 0.469 0.412 0.363 0.323 0.290 0.262 0.241 0.224 0.208 0.197 0.189 0.180 0.174 0.171 0.170 0.168 0.169 0.170 0.173 0.175 0.179 0.183 0.187 0.191
2SC4570
S11
ANG -14.0 -26.8 -39.6 -51.3 -62.7 -71.7 -80.8 -88.7 -96.1 -102.8 -109.7 -116.1 -122.4 -129.3 -136.0 -142.4 -148.9 -155.2 -161.7 -169.2 -175.5 178.7 172.8 167.5 162.3 157.6 152.6 147.9 144.0 139.8 MAG 5.432 5.334 5.158 4.873 4.628 4.216 3.934 3.645 3.383 3.153 2.936 2.752 2.577 2.438 2.310 2.193 2.095 2.000 1.918 1.848 1.779 1.719 1.664 1.609 1.566 1.522 1.483 1.444 1.411 1.380
S21
ANG 162.2 147.4 135.7 125.9 116.9 109.1 101.8 95.5 89.9 84.8 80.4 76.2 72.3 68.6 65.3 61.9 58.7 55.7 52.7 49.9 47.1 44.2 41.7 39.1 36.6 34.1 31.6 29.2 26.9 24.7 MAG 0.025 0.046 0.063 0.076 0.086 0.096 0.103 0.112 0.119 0.126 0.135 0.143 0.149 0.157 0.165 0.173 0.181 0.189 0.198 0.207 0.215 0.223 0.231 0.239 0.248 0.257 0.263 0.274 0.282 0.289
S12
ANG 78.4 70.8 64.4 59.3 56.7 55.1 53.8 52.9 52.4 51.5 51.6 51.6 51.3 50.5 50.4 50.1 49.4 49.1 48.7 48.1 47.6 46.8 46.0 45.4 44.4 43.6 42.6 42.0 40.9 40.1 MAG 0.968 0.900 0.823 0.756 0.698 0.656 0.620 0.594 0.572 0.554 0.542 0.534 0.523 0.517 0.509 0.502 0.497 0.491 0.484 0.478 0.469 0.464 0.458 0.452 0.446 0.443 0.440 0.440 0.441 0.442
S22
ANG -10.1 -18.5 -24.5 -29.0 -32.2 -34.8 -36.7 -38.6 -40.0 -41.6 -43.0 -44.8 -46.1 -47.4 -48.9 -50.2 -51.6 -53.2 -54.9 -56.8 -58.6 -60.9 -63.1 -65.7 -68.7 -72.0 -74.9 -78.3 -81.4 -84.5
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 5 V, IC = 1 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.974 0.957 0.922 0.882 0.837 0.793 0.741 0.693 0.645 0.596 0.547 0.504 0.470 0.438 0.410 0.386 0.362 0.344 0.329 0.312 0.302 0.293 0.285 0.280 0.276 0.272 0.271 0.270 0.270 0.271
2SC4570
S11
ANG -8.7 -18.0 -27.1 -35.5 -44.3 -52.1 -60.0 -67.7 -75.0 -82.7 -90.0 -97.0 -103.2 -109.9 -116.0 -122.2 -128.5 -134.4 -140.3 -147.2 -153.2 -158.9 -165.1 -170.8 -176.5 177.7 172.4 167.1 162.1 157.0 MAG 1.934 1.952 1.975 1.960 1.956 1.846 1.815 1.768 1.726 1.706 1.668 1.625 1.568 1.523 1.461 1.421 1.376 1.331 1.293 1.261 1.225 1.189 1.166 1.129 1.107 1.078 1.055 1.030 1.012 0.989
S21
ANG 166.8 156.5 146.8 138.2 130.5 122.9 115.4 108.5 102.2 96.0 90.3 84.9 79.9 75.1 70.9 66.6 62.5 58.9 55.2 51.8 48.5 45.2 42.2 39.2 36.4 33.6 30.9 28.3 26.0 23.6 MAG 0.026 0.051 0.073 0.092 0.108 0.123 0.133 0.142 0.148 0.155 0.160 0.166 0.170 0.174 0.178 0.180 0.184 0.189 0.193 0.198 0.201 0.206 0.211 0.217 0.222 0.228 0.233 0.241 0.247 0.253
S12
ANG 83.1 76.3 69.1 63.4 58.5 54.3 50.5 47.2 44.9 42.6 40.8 39.7 38.8 37.9 37.2 36.9 36.6 36.3 36.5 36.3 36.5 36.4 36.6 36.4 36.4 36.7 36.4 36.4 36.4 36.4 MAG 0.993 0.970 0.941 0.911 0.874 0.844 0.812 0.785 0.757 0.735 0.716 0.704 0.690 0.680 0.669 0.660 0.651 0.643 0.635 0.626 0.618 0.613 0.605 0.600 0.594 0.591 0.588 0.589 0.588 0.588
S22
ANG -5.8 -11.2 -16.4 -20.8 -24.9 -28.6 -32.0 -34.9 -37.7 -40.1 -42.3 -44.6 -46.6 -48.4 -50.1 -52.0 -53.8 -55.7 -57.7 -59.7 -61.8 -64.3 -66.7 -69.6 -72.6 -75.9 -79.1 -82.4 -85.6 -88.6
isc Websitewww.iscsemi.cn
6
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 5 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.879 0.768 0.646 0.536 0.442 0.375 0.319 0.279 0.247 0.222 0.203 0.189 0.178 0.170 0.163 0.160 0.159 0.156 0.157 0.161 0.164 0.166 0.170 0.173 0.179 0.183 0.189 0.193 0.199 0.205
2SC4570
S11
ANG -17.8 -36.6 -53.1 -67.3 -80.0 -89.5 -98.7 -106.9 -114.8 -122.5 -130.1 -137.5 -144.8 -152.1 -159.6 -166.3 -173.0 -178.7 175.0 168.3 163.1 158.3 153.3 149.2 145.1 141.2 137.8 133.9 130.8 127.5 MAG 8.523 8.074 7.436 6.691 5.987 5.261 4.707 4.239 3.852 3.526 3.239 3.013 2.814 2.641 2.498 2.366 2.245 2.145 2.051 1.974 1.903 1.828 1.771 1.714 1.664 1.613 1.573 1.530 1.494 1.462
S21
ANG 155.5 139.8 126.6 115.7 106.5 99.5 93.2 87.9 83.3 79.1 75.1 71.5 68.2 64.8 62.0 58.8 55.9 52.9 50.5 47.7 45.1 42.6 40.1 37.6 35.2 32.9 30.5 28.2 26.0 23.9 MAG 0.027 0.047 0.061 0.073 0.082 0.092 0.101 0.110 0.120 0.129 0.139 0.148 0.157 0.167 0.177 0.187 0.196 0.205 0.215 0.224 0.234 0.244 0.253 0.262 0.272 0.282 0.291 0.300 0.309 0.316
S12
ANG 75.6 66.8 61.3 58.7 57.5 56.7 56.9 56.5 56.0 55.4 55.6 55.0 54.6 54.2 53.4 52.5 51.8 51.3 50.4 49.5 48.8 47.5 46.4 45.5 44.5 43.3 42.2 40.9 39.8 38.7 MAG 0.932 0.812 0.704 0.627 0.568 0.528 0.496 0.475 0.456 0.443 0.434 0.427 0.419 0.415 0.408 0.403 0.398 0.392 0.385 0.378 0.370 0.364 0.359 0.353 0.347 0.345 0.340 0.342 0.342 0.343
S22
ANG -15.0 -25.5 -31.5 -35.1 -37.3 -39.0 -40.3 -41.7 -42.8 -44.2 -45.6 -47.0 -48.3 -49.7 -51.0 -52.4 -54.0 -55.4 -57.0 -59.0 -60.7 -63.4 -65.7 -68.6 -71.8 -75.2 -78.6 -82.2 -85.6 -88.8
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 3 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.920 0.860 0.774 0.689 0.600 0.530 0.456 0.402 0.354 0.317 0.286 0.261 0.241 0.228 0.214 0.205 0.198 0.192 0.188 0.187 0.187 0.187 0.189 0.191 0.195 0.197 0.202 0.205 0.209 0.214
2SC4570
S11
ANG -14.3 -28.2 -41.7 -54.1 -66.2 -75.7 -85.4 -94.0 -101.9 -109.3 -116.4 -123.8 -130.3 -137.6 -144.5 -151.3 -157.9 -163.9 -170.5 -177.6 176.7 171.2 165.7 160.8 155.9 151.5 147.3 143.1 139.4 135.5 MAG 5.495 5.327 5.129 4.838 4.584 4.162 3.873 3.577 3.323 3.082 2.865 2.687 2.518 2.381 2.255 2.144 2.045 1.956 1.873 1.802 1.738 1.675 1.626 1.574 1.531 1.486 1.449 1.413 1.379 1.350
S21
ANG 160.8 146.5 134.7 124.8 115.6 107.8 100.4 94.1 88.6 83.5 79.2 74.9 71.0 67.2 64.0 60.6 57.3 54.3 51.3 48.4 45.8 43.0 40.3 37.7 35.2 32.7 30.3 27.8 25.6 23.3 MAG 0.028 0.051 0.069 0.083 0.094 0.103 0.112 0.120 0.129 0.136 0.144 0.152 0.160 0.168 0.177 0.185 0.194 0.202 0.210 0.219 0.227 0.236 0.245 0.253 0.263 0.272 0.279 0.288 0.297 0.305
S12
ANG 77.6 69.7 63.1 58.5 55.3 53.2 52.1 51.3 50.4 50.3 50.2 49.6 49.6 49.0 48.5 48.2 47.6 47.1 46.6 46.2 45.4 44.4 43.6 42.9 42.1 41.1 40.3 39.2 38.2 37.5 MAG 0.962 0.886 0.802 0.731 0.669 0.623 0.585 0.556 0.533 0.513 0.500 0.491 0.480 0.471 0.464 0.458 0.451 0.444 0.437 0.429 0.421 0.416 0.408 0.402 0.397 0.395 0.392 0.391 0.392 0.394
S22
ANG -11.3 -20.5 -27.2 -32.1 -35.5 -38.2 -40.3 -42.2 -43.9 -45.3 -47.0 -48.5 -49.9 -51.3 -52.5 -54.1 -55.6 -57.1 -58.8 -60.9 -62.8 -65.2 -67.4 -70.4 -73.7 -76.8 -80.3 -83.6 -86.8 -90.1
isc Websitewww.iscsemi.cn
8
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 1 mA, ZO = 50 Freque. MHz 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG 0.973 0.954 0.918 0.878 0.831 0.785 0.733 0.684 0.634 0.586 0.539 0.495 0.464 0.433 0.406 0.383 0.363 0.346 0.331 0.318 0.308 0.300 0.294 0.290 0.288 0.286 0.284 0.284 0.285 0.286
2SC4570
S11
ANG -9.2 -18.7 -28.1 -36.9 -46.1 -54.0 -62.3 -70.4 -77.9 -85.8 -93.2 -100.5 -107.2 -114.0 -120.4 -126.8 -133.3 -139.4 -145.4 -152.2 -158.4 -164.1 -170.1 -175.5 -178.7 -173.3 -168.1 -162.9 -158.3 -153.5 MAG 1.928 1.948 1.975 1.954 1.948 1.838 1.808 1.758 1.717 1.689 1.649 1.607 1.549 1.449 1.440 1.396 1.359 1.310 1.273 1.242 1.206 1.169 1.148 1.112 1.091 1.064 1.042 1.015 .997 .977
S21
ANG 166.5 155.8 145.9 137.0 129.2 121.4 113.9 106.9 100.5 94.2 88.5 83.0 78.1 73.3 69.1 64.9 60.7 57.0 53.4 49.9 46.6 43.3 40.3 37.4 34.6 31.9 29.2 26.5 24.2 21.8 MAG 0.029 0.057 0.080 0.102 0.120 0.134 0.145 0.156 0.163 0.169 0.175 0.179 0.184 0.188 0.191 0.195 0.198 0.203 0.206 0.210 0.215 0.220 0.224 0.229 0.235 0.241 0.247 0.253 0.259 0.265
S12
ANG 82.1 74.4 68.1 62.2 56.9 52.4 49.0 45.3 42.9 40.8 38.7 37.4 36.1 35.2 34.8 34.5 33.9 33.8 33.7 33.5 33.7 33.3 33.3 33.3 33.1 33.2 32.9 33.1 32.8 33.2 MAG 0.990 0.967 0.935 0.901 0.860 0.827 0.794 0.764 0.734 0.711 0.693 0.677 0.661 0.649 0.639 0.627 0.619 0.609 0.601 0.591 0.582 0.576 0.568 0.563 0.558 0.554 0.551 0.551 0.552 0.552
S22
ANG -6.3 -12.2 -17.6 -22.5 -26.9 -30.9 -34.5 -37.6 -40.5 -43.0 -45.3 -47.5 -49.5 -51.5 -53.3 -55.2 -57.2 -59.1 -61.0 -63.4 -65.5 -68.1 -70.6 -73.7 -76.9 -80.2 -83.5 -86.9 -90.2 -93.4
isc Websitewww.iscsemi.cn

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