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| SMD Type MOS Field Effect Transistor 2SK3458 TO-263 Features +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) +0.2 8.7-0.2 Gate voltage rating 30 V Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 3.0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Avalanche capability ratings Surface mount package available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 800 30 6.0 24 100 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =6.0A, VDD =450V, VGS = 10 V ID=3.0A,VGS(on)=10V,RG=10 ,VDD=150V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=800V,VGS=0 VGS= 30V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=3.0A VGS=10V,ID=3.0A 2.5 2.0 1.8 1220 170 16 17 7 43 11 25 6 10 2.2 pF pF pF ns ns ns ns nC nC nC Min Typ Max 100 100 3.5 Unit A A V S 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 |
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