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| 4N25 Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description The4N25isanoptocouplerforgeneralpurposeapplications.Itcontainsalightemittingdiodeopticallycoupled toaphoto-transistor.Itispackagedina6-pinDIPpackageandavailableinwide-leadspacingoptionandlead bendSMDoption.Responsetime,tr,istypically3sand minimumCTRis20%atinputcurrentof10mA. Applications * I/Ointerfacesforcomputers * Systemappliances,measuringinstruments * Signaltransmissionbetweencircuitsofdifferent potentialsandimpedances Features * Responsetime (tr:typ.,3satVCE=10V,IC=2mA,RL=100) * CurrentTransferRatio(CTR:min.20%atIF=10mA, VCE=10V) * Input-outputisolationvoltage(Viso=2500Vrms) * Dual-in-linepackage * ULapproved * CSAapproved * IEC/EN/DINEN60747-5-2approved * Optionsavailable: -Leadswith0.4"(10.16mm)spacing(W00) -Leadsbendsforsurfacemounting(300) -TapeandreelforSMD(500) -IEC/EN/DINEN60747-5-2approvals(060) CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. 4N25isULRecognizedwith2500Vrmsfor1minuteperUL1577andisapprovedunderCSAComponentAcceptance Notice#5,FileCA88324. RoHS Compliant Option Part Number Rank '0' 20% Toorder,chooseapartnumberfromthepartnumbercolumnandcombinewiththedesiredoptionfromtheoption columntoformanorderentry. Example1: 4N25-360Etoorderproductof300milDIP-6DCGullWingSurfaceMountpackageinTubepackagingwith 20% PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4 Schematic ANODE 1 + IF 6 BASE VF CATHODE - 2 IC 5 COLLECTOR 4 1 1. ANODE 2. CATHODE 3. NC 2 3 4. EMITTER 5. COLLECTOR 6. BASE EMITTER 2 Package Outline Drawings 4N25-000E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 Y Y WW 6.5 0.5 (0.256) 2.8 0.5 (0.110) DATE CODE 3.5 0.5 (0.138) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 0.26 (0.010) 7.62 ~ 9.98 ANODE DIMENSIONS IN MILLIMETERS AND (INCHES) 2.54 0.25 (0.1) 0.5 0.1 (0.02) 4N25-060E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 V Y Y WW 6.5 0.5 (0.256) 2.8 0.5 (0.110) DATE CODE 3.5 0.5 (0.138) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 0.26 (0.010) 7.62 ~ 9.98 ANODE DIMENSIONS IN MILLIMETERS AND (INCHES) 2.54 0.25 (0.1) 0.5 0.1 (0.02) 4N25-W00E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 Y Y WW 6.5 0.5 (0.256) 2.8 0.5 (0.110) 3.5 0.5 (0.138) 6.9 0.5 (0.272) 2.3 0.5 (0.09) 0.5 0.1 (0.02) 0.26 (0.010) 10.16 0.5 (0.4) ANODE DATE CODE DIMENSIONS IN MILLIMETERS AND (INCHES) 2.54 0.25 (0.1) 4N25-300E 7.3 0.5 (0.287) 7.62 0.3 (0.3) LEAD FREE A 4N25 Y Y WW 6.5 0.5 (0.256) 1.2 0.1 (0.047) DATE CODE 3.5 0.5 (0.138) 0.35 0.25 (0.014) 0.26 (0.010) ANODE 2.54 0.25 (0.1) 1.0 0.25 (0.39) 10.16 0.3 (0.4) DIMENSIONS IN MILLIMETERS AND (INCHES) 3 Solder Reflow Temperature Profile Temperature (C) 30 seconds 250C 217C 200C 260C (Peak Temperature) 1. One-time soldering reflow is recommended within theconditionoftemperatureandtimeprofileshown atright. 2. Whenusinganothersolderingmethodsuchasinfrared raylamp,thetemperaturemayrisepartiallyinthemold ofthedevice.Keepthetemperatureonthepackage ofthedevicewithintheconditionof(1)above. 150C 60 sec 25C 60 ~ 150 sec 90 sec Time (sec) 60 sec Note: Non-halide flux should be used. Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) -55C to +150C -55C to +100C 260C for 10 s 80 mA 6V 150 mW 100 mA 30 V 7V 70 V 150 mW 250 mW 2500 Vrms 4 Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Floating Capacitance IC x 100% IF Symbol VF IR Ct ICEO BVCEO BVECO BVCBO IC CTR VCE(sat) tr tf Riso Cf Min. - - - - 30 7 70 2 20 - - - 5 x 1010 - Typ. 1.2 - 50 - - - - - - 0.1 3 3 1 x 1011 1 Max. 1.5 10 - 50 - - - - - 0.5 - - - - Units V A pF nA V V V mA % V s s pF Test Conditions IF = 10 mA VR = 4 V V = 0, f = 1 KHz VCE = 10 V, IF = 0 IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 10 V IF = 50 mA, IC = 2 mA VCE = 10 V, IC = 2 mA RL = 100 DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz * CTR = PC - COLLECTOR POWER DISSIPATION - mW 100 IF - FORWARD CURRENT - mA 200 IF - FORWARD CURRENT - mA 500 200 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 TA = 75C TA = 50C TA = 25C TA = 0C TA = -25C 80 60 40 20 0 -55 150 100 50 -25 0 25 50 75 100 125 0 -55 -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C VF - FORWARD VOLTAGE - V Figure 1. Forward current vs. temperature. 4N25 fig 1 Figure 2. Collector power dissipation vs. temperature. 4N25 fig 2 Figure 3. Forward current vs. forward voltage. 4N25 fig 3 CTR - CURRENT TRANSFER RATIO - % 50 40 30 20 TA = 25C IC - COLLECTOR CURRENT - mA VCE = 10 V 15 RELATIVE CURRENT TRANSFER RATIO - % TA = 25C IF = 40 mA PC (MAX.) 300 IF = 10 mA VCE = 10 V 10 IF = 30 mA 200 IF = 20 mA 5 IF = 10 mA IF = 5 mA 0 0 5 10 15 RBE = 10 0 0.1 0.2 500 k 0.5 1 2 100 k 5 10 20 50 100 100 0 -55 -25 0 25 50 75 100 IF - FORWARD CURRENT - mA VCE - COLLECTOR-EMITTER VOLTAGE - V TA - AMBIENT TEMPERATURE - C Figure 4. Current transfer ratio vs. forward current. 4N25 fig 4 Figure 5. Collector current vs. collector-emitter volt4N25 fig 5 age. Figure 6. Relative current transfer ratio vs. tempera4N25 fig 6 ture. ICEO - COLLECTOR DARK CURRENT - A 0.3 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V IF = 50 mA IC = 2 mA 10-6 5 5 5 5 5 5 5 100 VCE = 10 V RESPONSE TIME - s 10-7 10-8 10-9 10 -10 50 20 10 5 2 1 0.5 0.2 VCE = 10 V IC = 2 mA TA = 25C tf tr td 0.2 0.1 ts 10-11 10-12 10-13 -55 -25 0 20 40 80 100 125 0 -55 -25 0 25 50 75 100 0.1 0.05 0.1 0.2 0.5 1 2 5 10 20 50 TA - AMBIENT TEMPERATURE - C TA - AMBIENT TEMPERATURE - C RL - LOAD RESISTANCE - k Figure 7. Collector-emitter saturation voltage vs. 4N25 fig 7 temperature. Figure 8. Collector dark current vs. temperature. 4N25 fig 8 Figure 9. Response time vs. load resistance. 4N25 fig 9 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V 5 0 -5 RL = 10 k -10 -15 -20 0.5 1 RL = 1 k RL = 100 IC = 0.5 mA IC = 2 mA VOLTAGE GAIN AV - dB 5 4 3 2 1 0 IC = 1 mA IC = 3 mA IC = 6 mA VCE = 5 V IC = 2 mA TA = 25C 7 6 TA = 25C 2 5 10 20 50 100 200 500 0 5 10 15 IC = 7 mA 20 25 30 f - FREQUENCY - kHz IF - FORWARD CURRENT - mA Figure 10. Frequency response. 4N25 fig 10 Figure 11. Collector-emitter saturation voltage vs. 4N25 fig 11 forward current. 6 Test Circuit for Response Time Test Circuit for Frequency Response VCC RL OUTPUT VCC RL OUTPUT INPUT RD RD ~ INPUT 4N25 Test Circuit 1 10% OUTPUT 90% td tr ts tf 4N25 Test Circuit 1 For product information and a complete list of distributors, please go to our website: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright (c) 2007 Avago Technologies Limited. All rights reserved. Obsoletes 5989-1733EN AV02-0412EN - October 18, 2007 7 |
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