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H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0419-0300 Rev.3.00 May 25, 2006
Features
* * * * * * Low on-resistance: RDS(on) = 0.070 typ. Low leakage current: IDSS = 10 A max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 ) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ
Outline
RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note3 Pch Note2 ch-c Tch Tstg Ratings 500 30 60 240 60 240 30 270 0.463 150 -55 to +150 Unit V V A A A A A W
C/W C C
Rev.3.00, May 25, 2006 page 1 of 6
H5N5005PL
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Note: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 500 -- -- 2.0 25 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 42 0.070 10550 1060 180 115 380 560 300 300 40 155 1.0 220 2.0 Max -- 10 0.1 4.0 -- 0.085 -- -- -- -- -- -- -- -- -- -- 1.5 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 30 A, VDS = 10 V Note4 ID = 30 A, VGS= 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID= 30 A VGS = 10 V RL = 8.33 Rg = 10 VDD = 400 V VGS = 10 V ID = 60 A IF = 60 A, VGS = 0 Note4 IF = 60 A, VGS = 0 diF/dt = 100A/s
Rev.3.00, May 25, 2006 page 2 of 6
H5N5005PL
Main Characteristics
Power vs. Temperature Derating
400 1000 300
10 s
Maximum Safe Operation Area
Pch (W)
Drain Current ID (A)
300
100 30 10
1m
s
10
0
s
Channel Dissipation
200
100
Operation in 3 this area is limited by RDS(on) 1 PW = 10 ms 0.3 (1shot) 0.1 0.03 Ta = 25C 1 3 10 DC Operation (Tc = 25C) 30 100 300 1000
0
0.01 50 100 150 200
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100 Pulse Test 8 V, 10 V 6V 60 200
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
80
160
120
40
80
20 5V VGS = 4.5 V 0 4 8 12 16 20
40
Tc = 75C
25C -25C 6 8 10
0
2
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS(on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
10 Pulse Test 8
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
0.2
0.1
6 ID = 60 A 4 30 A 2 10 A 0 4 8 12 16 20
0.05
0.02 Pulse Test VGS = 10 V, 15 V 0.01 1 2 5 10 20 50 100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.3.00, May 25, 2006 page 3 of 6
H5N5005PL
Static Drain to Source on State Resistance vs. Temperature
0.2 Pulse Test 0.16 VGS = 10 V 30 A ID = 60 A 10 A
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 VDS = 10 V Pulse Test 5 10 20 50 100 75C Tc = -25C 25C
0.12
0.08
0.04 0 -25
0
25
50
75
100 125 150
Case Temperature
Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
1000 100000
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
10000 Ciss 1000 Coss 100 VGS = 0 f = 1 MHz 0 50 100 150 Crss
200 100 50 di / dt = 100 A / s VGS = 0, Ta = 25C
20 10 0.1
10 0.3 1 3 10 30 100
200
250
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
1000 ID = 60 A VDD = 100 V 250 V 400 V VGS 20 10000
Switching Characteristics
VGS = 10 V, VDD = 250 V PW = 5 s, duty 1% RG = 10 td(off) tf 100 tr td(on) tr
800
16
Switching Time t (ns)
1000
600 VDS 400 VDD = 400 V 250 V 100 V 120 240 360 480
12
8
200
4 0 600
0
10 0.1
0.3
1
3
10
30
100
Gate Charge Qg (nC)
Drain Current ID (A)
Rev.3.00, May 25, 2006 page 4 of 6
H5N5005PL
Reverse Drain Current vs. Source to Drain Voltage
200
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature
6 5 4 3 2 1 0 -50 VDS = 10 V 0 50 100 150 200 ID = 10 mA
Reverse Drain Current IDR (A)
Pulse Test 160 5 V, 10 V VGS = 0 V 80
120
1 mA 0.1 mA
40
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 0.463C/W, Tc = 25C
PDM PW T
0.03
0.02 e 0.01 uls tp sho 1
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 250 V Vout Monitor
PW (s) Waveform
90% 10% 10% 10%
Vin Vout
90% td(on)
90% td(off) tf
tr
Rev.3.00, May 25, 2006 page 5 of 6
H5N5005PL
Package Dimensions
Package Name TO-3PL JEITA Package Code RENESAS Code PRSS0004ZF-A Previous Code TO-3PL / TO-3PLV MASS[Typ.] 9.9g
Unit: mm
6.0 0.2
20.0 0.3 3.3 0.2
5.0 0.2
26.0 0.3
20.0 0.6 2.5 0.3
1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2
5.45 0.5
3.8 7.4
Ordering Information
Part Name H5N5005PL Quantity 100 pcs Plastic case Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00, May 25, 2006 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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