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SMD Type P-Channel 2.5-V (G-S) MOSFET KI2301BDS SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features RoH Lead (Pb)-Free Version is RoHS Compliant. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) *2 TA=25 ------------------------------------------------TA=70 Pulsed Drain Current *1 Continuous Source Current (diode conduction) *2 Power Dissipation *2 TA=25 -------------------------------------------------TA=70 Jumction Temperature Storage Temperature Symbol VDS VGS ID IDM IS PD Tj Tstg -0.72 0.9 0.57 150 -55 to +150 -2.4 -1.9 -10 -0.6 0.7 0.45 5 sec Steady State -20 8 -2.2 -1.8 Unit V V A A A W * 1. Pulse width limited by maximum junction temperature. * 2. Surface Mounted on FR4 Board, t 5 sec. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient *1 Maximum Junction-to-Ambient *2 * 1. Surface Mounted on FR4 Board, t * 2. Surface Mounted on FR4 Board. 5 sec. Symbol RthJA Typical 120 140 Maximum 145 175 Unit /W www.kexin.com.cn 1 SMD Type KI2301BDS Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol Testconditons Transistors Min -20 -0.45 Typ Max Unit V V(BR)DSS VGS = 0 V, ID = -250 iA VGS(th) IGSS IDSS VDS = VGS, ID = -250 iA VDS = 0 V, VGS = 8V -0.95 100 -1 -10 nA A VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 55 On-State Drain Current ID(on) VDS VDS -5 V, VGS = -4.5 V -5 V, VGS = -2.5 V -6 -3 0.08 0.11 6.5 -0.8 4.5 -1.2 10 0.1 0.15 A Drain-Source On-State Resistance * Forward Transconductance * Diode Forward Voltage * Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time rDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr VGS = -4.5 V, ID = -2.8 A VGS = -2.5 V, ID = -2.0 A VDS = -5 V, ID = -2.8 A IS = -0.75 A, VGS = 0 V S V VDS = -6V ,VGS = -4.5 V , ID= -2.8 A 0.7 1.1 375 nC VDS = -6V ,VGS = 0 , f = 1 MHz 95 65 20 30 60 45 30 pF Turn-Off Time * Pulse test: PW 300 is duty cycle 2%. td(off) tf VDD = -6V , RL = 6U , ID = -1A , VGEN =- 4.5V , RG = 6U 40 30 20 ns Marking Marking L1 2 www.kexin.com.cn |
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