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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1077 DESCRIPTION *With TO-220 package *Complement to type 2SC2527 *High transition frequency *Excellent safe operating area APPLICATIONS *High-frequency power amplifier *Audio power amplifiers *Switching regulators *DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -10 60 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA ,RBE= IC=-50A ,IE=0 IE=-50A ,IC=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-5V VCB=-120V; IE=0 VCE=-120V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V;f=10MHz IE=0 ; VCB=-10V;f=1MHz 60 40 30 60 300 MIN -120 -120 -7 -0.9 -1.25 TYP. 2SA1077 MAX UNIT V V V -1.8 -1.7 -50 -1 -50 200 V V A mA A MHz 470 pF Switching times tr tstg tf Rise time Storage time Fall time IC=-7.5A; RL=4 IB1=-IB2=-0.75A; 0.15 0.5 0.11 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1077 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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